Multi-wavelength semiconductor lasers

• US 10,566,765 B2
• Filed: 10/27/2016
• Issued: 02/18/2020
• Est. Priority Date: 10/27/2016
• Status: Active Grant

• Current Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Original Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Inventors: Kurczveil, Geza, Liang, Di, Beausoleil, Raymond G.
• Primary Examiner(s): Park, Kinam
• Application Number:
  US15/335,909
• Publication Number:
  US 20180261978A1
• Time in Patent Office: 1,209 Days
• CPC Class Codes: H01S 2301/02 ASE (amplified spontaneous emission), noise; Reduction thereof
• CPC Class Codes: H01S 5/0208 Semi-insulating substrates
• CPC Class Codes: H01S 5/021 Silicon based substrates
• CPC Class Codes: H01S 5/0601 comprising an absorbing region H01S5/0604, H01S5/0607, H01S5/0615 and H01S5/065 take precedence; bistable laser devices in general G02F3/026
• CPC Class Codes: H01S 5/0602 which is an umpumped part of the active layer
• CPC Class Codes: H01S 5/0651 Mode control
• CPC Class Codes: H01S 5/0657 Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
• CPC Class Codes: H01S 5/06817 Noise reduction
• CPC Class Codes: H01S 5/1003 Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
• CPC Class Codes: H01S 5/1014 Tapered waveguide, e.g. spotsize converter H01S5/1064 takes precedence
• CPC Class Codes: H01S 5/1032 Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
• CPC Class Codes: H01S 5/1067 comprising nanoparticles
• CPC Class Codes: H01S 5/1071 Ring-lasers
• CPC Class Codes: H01S 5/1092 Multi-wavelength lasing
• CPC Class Codes: H01S 5/2224 semi-insulating semiconductors
• CPC Class Codes: H01S 5/3412 quantum box or quantum dash
• CPC Class Codes: H01S 5/50 Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Abstract

Examples disclosed herein relate to multi-wavelength semiconductor lasers. In some examples disclosed herein, a multi-wavelength semiconductor laser may include a silicon-on-insulator (SOI) substrate and a quantum dot (QD) layer above the SOI substrate. The QD layer may include and active gain region and may have at least one angled junction at one end of the QD layer. The SOI substrate may include a waveguide in an upper silicon layer and a mode converter to facilitate optical coupling of a lasing mode to the waveguide.

Claims

1. A multi-wavelength semiconductor laser, comprising:

a silicon-on-insulator (SOI) substrate;

a quantum dot (QD) layer above the SOI substrate, the QD layer including an active region, and at least one end of the QD layer having an angled junction;

a waveguide included in an upper silicon layer of the SOI substrate, wherein the waveguide comprises multiple widths along the length of the waveguide; and

a mode converter included in the waveguide to facilitate optical coupling of a lasing mode to the waveguide by forming tapers between the multiple widths of the waveguide such that an area of space in the waveguide between the tapers defines a laser cavity.

2. The multi-wavelength semiconductor laser of claim 1, wherein the tapering formed by the mode converter pulls the lasing mode into a silicon of the waveguide.

3. The multi-wavelength semiconductor laser of claim 2, wherein:

the active gain region is above a portion of the waveguide; and

the tapers formed by the mode converter are under the QD layer.

4. The multi-wavelength semiconductor laser of claim 2, wherein the multiple lengths of the waveguide includes at least a first width and a second width, the first width being greater than or less than the second width, and the tapers formed by the mode converter tapers the waveguide between the first width and the second width such that the area of space in the waveguide between the first width and the second width defines the laser cavity.

5. The multi-wavelength semiconductor laser of claim 1, comprising:

a saturable absorber (SA) included in the QD layer to reduce amplitude noise and manipulate the temporal behavior of the laser.

6. The multi-wavelength semiconductor laser of claim 5, wherein the SA comprises a reverse biased or unbiased subregion of gain material of the active gain region.

7. The multi-wavelength semiconductor laser of claim 6, wherein the SA is electrically isolated from the remaining active gain region, the electrical isolation formed by at least one of implantation or etching of portions of the QD layer surrounding the SA.

8. A multi-wavelength semiconductor laser, comprising:

a waveguide included in a first silicon layer of a silicon-on-insulator (SOI) substrate, wherein the waveguide comprises multiple widths along the length of the waveguide;

a quantum dot (QD) layer above the SOI substrate, the QD layer including an active gain region, and at least one end of the QD layer having a tapered junction;

a mode converter comprising tapers in the waveguide between the multiple widths to couple a lasing mode to the waveguide by defining a laser cavity in an area of space in the waveguide between the tapers; and

a first mirror and a second mirror.

9. The multi-wavelength semiconductor laser of claim 8, wherein the first mirror and the second mirror are included in the waveguide.

10. The multi-wavelength semiconductor laser of claim 9, comprising:

at least one saturable absorber (SA) in the active gain region to reduce amplitude noise and manipulate the temporal behavior of the laser.

11. The multi-wavelength semiconductor laser of claim 10, wherein the at least one SA comprises:

a first SA near a first end of the QD layer; and

a second SA near a second end of the QD layer opposite the first end.

12. The multi-wavelength semiconductor laser of claim 9, comprising:

a saturable absorber (SA) included in the active gain region; and

a booster semiconductor optical amplifier (SOA), the SA and booster SOA to reduce amplitude noise of the laser.

13. The multi-wavelength semiconductor laser of claim 11, wherein the booster SOA comprises:

a waveguide;

a mode converter included in the waveguide; and

a QD layer, including;

an active gain region; and

tapered or angled junctions at each end of the QD layer.

14. The multi-wavelength semiconductor laser of claim 8, wherein the first mirror and the second mirror are included in the QD layer.

15. The multi-wavelength semiconductor laser of claim 14, wherein the first mirror and the second mirror are formed by etching a top portion of the QD layer.

16. The multi-wavelength semiconductor laser of claim 14, wherein the first mirror and the second mirror are formed by etching a bottom portion of the QD layer before bonding the QD layer to the SOI substrate.

17. The multi-wavelength semiconductor laser of claim 14, wherein the first mirror and the second mirror are formed by etching the QD layer and a top portion of the waveguide.