Chaos nanonet device, and chaos nanonet-based PUF security apparatus
First Claim
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1. A chaos nanonet device, comprising:
- a nanonet material having a metallic property and a semiconductive property dispersed a substrate; and
an electrode array composed of a plurality of electrodes that has a selected domain size on the nanonet material and comprises selected electrodes to which a bias is applied in an off current range,wherein the nanonet material provides a signal path between any electrodes selected from the electrode array,wherein the signal path is formed between two randomly selected electrodes of the electrode array based on randomness of dispersed carbon nanotubes having the metallic property and the semiconductive property, andwherein the nanonet device generates output bits corresponding to signal path formation between two electrodes of the electrode array selected in association with input bits, generates response bits based on the output bits, and generates a public key and a private key using an application specific integrated circuit (ASIC) based on the response bits.
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Abstract
The present invention discloses a chaos nanonet device including a nanonet material having metallic and semiconductive properties dispersed on a substrate and an electrode array composed of a plurality of electrodes that has a selected domain size on the nanonet material, and a PUF security apparatus based on the chaos nanonet device.
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Citations
18 Claims
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1. A chaos nanonet device, comprising:
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a nanonet material having a metallic property and a semiconductive property dispersed a substrate; and an electrode array composed of a plurality of electrodes that has a selected domain size on the nanonet material and comprises selected electrodes to which a bias is applied in an off current range, wherein the nanonet material provides a signal path between any electrodes selected from the electrode array, wherein the signal path is formed between two randomly selected electrodes of the electrode array based on randomness of dispersed carbon nanotubes having the metallic property and the semiconductive property, and wherein the nanonet device generates output bits corresponding to signal path formation between two electrodes of the electrode array selected in association with input bits, generates response bits based on the output bits, and generates a public key and a private key using an application specific integrated circuit (ASIC) based on the response bits. - View Dependent Claims (2, 3, 4, 5)
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6. A chaos nanonet device, comprising:
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a plurality of carbon nanotubes formed on a flexible substrate; and an electrode array comprising a plurality of electrodes that is formed on the carbon nanotubes and has a selected domain size, wherein the carbon nanotubes provide a signal path to corresponding chirality between any electrodes selected from the electrode array, wherein the signal path is formed between two randomly selected electrodes of the electrode array based on randomness of dispersed carbon nanotubes having a metallic property and a semiconductive property, and wherein the nanonet device generates output bits corresponding to signal path formation between two electrodes of the electrode array selected in association with input bits, generates response bits based on the output bits, and generates a public key and a private key using an application specific integrated circuit (ASIC) based on the response bits. - View Dependent Claims (7, 8, 9, 10, 11)
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12. A chaos nanonet device, comprising:
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a nanonet material dispersed on a substrate using chirality; and an electrode array composed of a plurality of electrode that has a selected domain size on the nanonet material and comprises selected electrodes to which voltage is applied based on an electrical burning manner, wherein the nanonet material provides a signal path between any electrodes selected from the electrode array, wherein the signal path is formed between two randomly selected electrodes of the electrode array based on randomness of dispersed carbon nanotubes having a metallic property and a semiconductive property, and wherein the nanonet device generates output bits corresponding to signal path formation between two electrodes of the electrode array selected in association with input bits, generates response bits based on the output bits, and generates a public key and a private key using an application specific integrated circuit (ASIC) based on the response bits. - View Dependent Claims (13, 14, 15)
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16. A chaos nanonet-based physical unclonable function (PUF) security apparatus, comprising:
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a first response generator generating a challenge bit into an input bit; a decoder selecting two electrodes that correspond to an address related to the generated input bit; a chaos nanonet device generating an output bit for signal path formation between the selected electrodes; a second response generator generating the output bit into a response bit; and a security key generator generating the response bit into a public key and a private key using an application specific integrated circuit (ASIC), wherein the chaos nanonet device comprises; a nanonet material having metallic and semiconductive properties dispersed on the substrate; and an electrode array composed of a plurality of electrodes that has a selected domain size on the nanonet material and comprise selected electrodes to which a bias is applied in an off current range. - View Dependent Claims (17)
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18. A chaos nanonet-based physical unclonable function (PUF) security apparatus, comprising:
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a first response generator generating a challenge bit into an input bit; a decoder selecting two electrodes that correspond to an address related to the generated input bit; a chaos nanonet device generating an output bit for signal path formation between the selected electrodes; a second response generator generating the output bit into a response bit; and a security key generator generating the response bit into a public key and a private key using an application specific integrated circuit (ASIC), wherein the chaos nanonet device comprises; a nanonet material dispersed on the substrate using chirality; and an electrode array composed of a plurality of electrodes that has a selected domain size on the nanonet material and comprises selected electrode to which voltage is applied based on an electric burning method.
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Specification