Multiple seed layers for metallic interconnects
First Claim
1. A multiple seed layer structure used to fabricate devices, said multiple seed layer structure comprises:
- a substrate;
a patterned insulating layer formed on said substrate, said patterned insulating layer including at least one opening and a top field surface surrounding said at least one opening;
a barrier layer disposed over said patterned insulating layer including over inside bottom and sidewalls surfaces of the at least one opening;
a first seed layer disposed over the barrier layer, said first seed layer is formed by a first deposition technique;
a second seed layer disposed over the first seed layer, said second seed layer is formed by a second deposition technique, the first and second deposition techniques being different; and
an electroplated metallic layer disposed over the second seed layer, wherein the electroplated metallic layer comprises a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals.
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Abstract
One embodiment of the present invention is a multiple seed layer structure for making metallic interconnect including: (a) a patterned insulating layer on a substrate, the patterned insulating layer including at least one opening and a field surrounding the at least one opening; (b) a barrier layer disposed over the field and inside surfaces of the at least one opening; (c) a first seed layer disposed over the barrier layer using a first deposition technique; (d) a second seed layer disposed over the first seed layer using a second deposition technique, the first and second deposition techniques being different, one producing a substantially conformal seed layer and the other producing a substantially non-conformal seed layer; and (e) an electroplated metallic layer disposed over the second seed layer, the electroplated metallic layer including a material selected from a group consisting of Cu, Ag, or alloys including one or more of these metals.
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Citations
57 Claims
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1. A multiple seed layer structure used to fabricate devices, said multiple seed layer structure comprises:
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a substrate;
a patterned insulating layer formed on said substrate, said patterned insulating layer including at least one opening and a top field surface surrounding said at least one opening;
a barrier layer disposed over said patterned insulating layer including over inside bottom and sidewalls surfaces of the at least one opening;
a first seed layer disposed over the barrier layer, said first seed layer is formed by a first deposition technique;
a second seed layer disposed over the first seed layer, said second seed layer is formed by a second deposition technique, the first and second deposition techniques being different; and
an electroplated metallic layer disposed over the second seed layer, wherein the electroplated metallic layer comprises a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51)
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14. The multiple seed layer structure of claim I wherein the first and second seed layers comprise a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals.
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52. A multiple seed layer structure used to fabricate copper interconnects, said multiple seed layer structure comprising:
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a patterned insulating layer formed on a substrate, the patterned insulating layer including at least one opening and a field surrounding the at least one opening;
a barrier layer deposited over the patterned insulating layer including overlying the field and inside surfaces of the at least one opening, the barrier layer comprising a refractory metal or an alloy comprising a refractory metal;
a first copper seed layer, formed by chemical vapor deposition, disposed over the barrier layer, the first copper seed layer substantially continuously covering inside surfaces of the at least one opening;
a second copper seed layer, formed by physical vapor deposition, disposed over the first copper seed layer, said second seed layer being thicker than said first seed layer over the field; and
electroplated copper over the second seed layer.
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53. A multiple seed layer structure used to fabricate copper interconnects, said multiple seed layer structure comprising:
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a patterned insulating layer formed over a substrate, the patterned insulating layer including at least one opening and a field surrounding the at least one opening;
a barrier layer formed over the patterned insulating layer including overlying the field and inside surfaces of the at least one opening, the barrier layer comprising a refractory metal or an alloy comprising a refractory metal;
a first copper seed layer, formed by physical vapor deposition, disposed over the barrier layer;
a second copper seed layer, formed by chemical vapor deposition, disposed over the first copper seed layer, the second copper seed layer substantially continuously covering inside surfaces of the at least one opening, said first seed layer being thicker than said second seed layer over the field; and
electroplated copper over the second seed layer.
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54. A multiple seed layer structure used to fabricate metallic interconnects, said multiple seed layer structure comprising:
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a patterned insulating layer formed on a substrate, the patterned insulating layer including at least one opening and a field surrounding the at least one opening;
a barrier layer formed over the field and inside surfaces of the at least one opening;
two or more seed layers deposited over the barrier layer using two or more different deposition techniques; and
an electroplated metallic layer formed over the two or more seed layers, the electroplated metallic layer comprising a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals.
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55. A metallic filled via or trench interconnect fabricated by using a multiple seed layer structure, said multiple seed layer structure comprising:
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a patterned insulating layer formed on a substrate, the patterned insulating layer including at least one opening and a field surrounding the at least one opening;
a barrier layer disposed over the patterned insulating layer, including inside surfaces of the at least one opening;
a substantially conformal seed layer disposed over the barrier layer, including inside surfaces of the at least one opening, said substantially conformal seed layer comprises a material selected from the group consisting of Cu, Ag, or alloys comprising one or more of these metals;
a substantially non-conformal seed layer disposed over the substantially conformal seed layer, said substantially non-conformal seed layer comprises a material selected from the group consisting of Cu, Ag, or alloys comprising one or more of these metals, said substantially non-conformal seed layer being thicker than said substantially conformal seed layer over the field; and
an electroplated metallic layer deposited over the substantially non-conformal seed layer, said electroplated metallic layer comprising a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals.
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56. A metallic filled via or trench interconnect fabricated by using a multiple seed layer structure, said multiple seed layer structure comprising:
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a patterned insulating layer formed on a substrate, the patterned insulating layer including at least one opening and a field surrounding the at least one opening;
a barrier layer disposed over the patterned insulating layer, including inside surfaces of the at least one opening;
a substantially non-conformal seed layer disposed over the barrier layer, said substantially non-conformal seed layer comprises a material selected from the group consisting of Cu, Ag, or alloys comprising one or more of these metals;
a substantially conformal seed layer disposed over the substantially non-conformal seed layer, said substantially conformal seed layer comprises a material selected from the group consisting of Cu, Ag, or alloys comprising one or more of these metals, said substantially non-conformal seed layer being thicker than said substantially conformal seed layer over the field; and
an electroplated metallic layer deposited over the substantially conformal seed layer, said electroplated metallic layer comprising a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals.
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57. A metallic interconnect, said metallic interconnect comprises:
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a barrier layer disposed over an opening in an insulating layer including over inside bottom and sidewall surfaces of the opening;
a first seed layer disposed over the barrier layer, which first seed layer is formed by a first deposition technique;
a second seed layer disposed over the first seed layer, which second seed layer is formed by a second deposition technique, the first and second deposition techniques being different; and
an electroplated metallic layer disposed over the second seed layer, wherein the electroplated metallic layer comprises a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals.
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Specification