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Multiple seed layers for metallic interconnects

  • US 20010005056A1
  • Filed: 12/04/2000
  • Published: 06/28/2001
  • Est. Priority Date: 10/02/1999
  • Status: Active Grant
First Claim
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1. A multiple seed layer structure used to fabricate devices, said multiple seed layer structure comprises:

  • a substrate;

    a patterned insulating layer formed on said substrate, said patterned insulating layer including at least one opening and a top field surface surrounding said at least one opening;

    a barrier layer disposed over said patterned insulating layer including over inside bottom and sidewalls surfaces of the at least one opening;

    a first seed layer disposed over the barrier layer, said first seed layer is formed by a first deposition technique;

    a second seed layer disposed over the first seed layer, said second seed layer is formed by a second deposition technique, the first and second deposition techniques being different; and

    an electroplated metallic layer disposed over the second seed layer, wherein the electroplated metallic layer comprises a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals.

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