Method for forming interconnect structure in semiconductor device
First Claim
1. A method for fabricating a semiconductor device comprising the steps of:
- forming a first trench and a second trench in a surface of a dielectric film, the second trench having a width larger than a width of the first trench and having therein a slit wall extending along the second trench on a bottom of the second trench;
depositing a conductive layer on the dielectric film including the first and second trenches; and
polishing the conductive layer until a surface of the dielectric film is exposed, to leave the conductive layer in the first and second trenches as interconnect layers.
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Accused Products
Abstract
A method of fabricating a semiconductor device including the steps of: forming a first trench and a second trench having a width larger than a width of the first trench in a dielectric film, and simultaneously a slit pattern at a central portion of the second trench; depositing a conductive layer on the dielectric film; and polishing the conductive layer until a surface of the dielectric film is exposed to leave the conductive layer in the first and the second trenches and the slit pattern, thereby forming a damascene interconnect structure on the surface of the dielectric layer. In accordance with the present invention, the formation of the slit pattern formed on the central portion of the larger width trench can increase the thickness of the plated film, thereby suppressing the dishing of the plated film on the central portion of the larger width interconnect.
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Citations
11 Claims
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1. A method for fabricating a semiconductor device comprising the steps of:
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forming a first trench and a second trench in a surface of a dielectric film, the second trench having a width larger than a width of the first trench and having therein a slit wall extending along the second trench on a bottom of the second trench;
depositing a conductive layer on the dielectric film including the first and second trenches; and
polishing the conductive layer until a surface of the dielectric film is exposed, to leave the conductive layer in the first and second trenches as interconnect layers. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of fabricating a semiconductor device comprising the steps of:
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forming a first trench and a second trench having a width larger than a width of the first trench in a dielectric film overlying a semiconductor substrate after a trench pattern having a depth larger than that of the first trench is formed at a central portion of the second trench;
depositing a conductive layer on the dielectric film including the first and the second trenches and the trench pattern; and
polishing the conductive layer until a surface of the dielectric film is exposed by using a chemical-mechanical polishing to leave the conductive layer in the first and the second trenches and the trench pattern, thereby forming a damascene interconnect structure on the surface of the dielectric layer. - View Dependent Claims (9)
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10. A method of fabricating a semiconductor device comprising the steps of:
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forming a first trench in a dielectric film overlying a semiconductor substrate and a plurality of dummy trenches having specified length, width and spacing on an open region;
depositing a conductive layer on the dielectric film including the first trench and the dummy trenches; and
polishing the conductive layer until a surface of the dielectric film is exposed by using a chemical-mechanical polishing to leave the conductive layer in the first trench and the dummy trenches, thereby forming a damascene interconnect structure on the surface of the dielectric layer. - View Dependent Claims (11)
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Specification