Process for wafer level treatment to reduce stiction and passivate micromachined surfaces and compounds used therefor
First Claim
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1. A method for imparting anti-stiction properties to a micromachined device, said device being in a chip derived from a wafer comprising:
- a. placing said wafer in an oven along with an organo silicon compound b. optionally creating a vacuum in said oven and optionally replacing the oven atmosphere with an unreactive gas such as nitrogen, c. heating said oven to a temperature such that at least some of said organo silicon is vaporized, d. cooling said oven and removing said wafer, and e. optionally cutting said wafer into chips.
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Abstract
This invention discloses a process for forming durable anti-stiction surfaces on micromachined structures while they are still in wafer form (i.e., before they are separated into discrete devices for assembly into packages). This process involves the vapor deposition of a material to create a low stiction surface. It also discloses chemicals which are effective in imparting an anti-stiction property to the chip. These include polyphenylsiloxanes, silanol terminated phenylsiloxanes and similar materials.
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Citations
28 Claims
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1. A method for imparting anti-stiction properties to a micromachined device, said device being in a chip derived from a wafer comprising:
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a. placing said wafer in an oven along with an organo silicon compound b. optionally creating a vacuum in said oven and optionally replacing the oven atmosphere with an unreactive gas such as nitrogen, c. heating said oven to a temperature such that at least some of said organo silicon is vaporized, d. cooling said oven and removing said wafer, and e. optionally cutting said wafer into chips. - View Dependent Claims (2, 3, 4, 5, 6)
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- 7. A chip having anti-stiction properties, said chip from a wafer treated with the vapor of an organic compound.
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25. A method for using a micromachined device having good anti-stiction properties, said device being in a chip derived from a wafer said wafer manufactured by a process comprising:
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a. placing said wafer in an oven along with an organo silicon compound b. optionally creating a vacuum in said oven and optionally replacing the oven atmosphere with an unreactive gas such as nitrogen, c. heating said oven to a temperature such that at least some of said organo silicon is vaporized, d. cooling said oven and removing said wafer, and e. optionally cutting said wafer into chips. - View Dependent Claims (26, 27)
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28. A method in which moisture is reacted with a silicone material above approximately 200°
- C., said reaction promoting the formation of a thin surface coating containing some of the products of that reaction.
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