Semiconductor device, manufacturing method and apparatus for the same
First Claim
1. A semiconductor device having at least a solder bump formed of alloy solder on an under-bump layer including first metal formed on a wiring layer, comprising:
- an intermetallic compound including metal that is a main component of the alloy solder and second metal different from the metal that is the main component of the alloy solder, wherein the intermetallic compound is formed between the solder bump and the under-bump layer.
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Accused Products
Abstract
A highly reliable semiconductor chip electrode structure allowing control of interface reaction of bonding sections even in the case of using two- or three-element solder used conventionally is disclosed. A solder alloy making layer for preventing dissolving and diffusion of tin into tin-based lead flee solder is thinly formed on a UBM layer The tin-based solder is supplied in solder paste or solder ball form. A combined solder alloy layer composed of a combination of intermetallic compounds, one of tin and the solder alloy making layer, and one of tin and the UBM layer, is formed by heating and melting.
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Citations
158 Claims
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1. A semiconductor device having at least a solder bump formed of alloy solder on an under-bump layer including first metal formed on a wiring layer, comprising:
an intermetallic compound including metal that is a main component of the alloy solder and second metal different from the metal that is the main component of the alloy solder, wherein the intermetallic compound is formed between the solder bump and the under-bump layer. - View Dependent Claims (5, 9, 13, 17, 21, 22, 24, 26, 28, 29, 30, 31, 32, 33, 35, 36, 37, 38, 40, 41, 42, 43, 49)
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2. A semiconductor device having at least a solder bump formed of alloy solder on an under-bump layer including first metal formed on a wiring layer, comprising:
an alloy layer comprised of a combination of an intermetallic compound of metal that is a main component of the alloy solder and second metal different from the metal that is the main component of the alloy solder, and an intermetallic compound of the first metal included in the under-bump layer and the metal that is the main component of the alloy solder, wherein the alloy layer is formed between the solder bump and the under-bump layer. - View Dependent Claims (6, 10, 14, 18, 23, 34, 51, 52)
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3. A semiconductor device having at least a solder bump formed of alloy solder on an under-bump layer including first metal formed on a wiring layer, comprising:
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an intermetallic compound formed between the solder bump and the under-bump layer, wherein the intermetallic compound includes;
second metal constituting a metal layer that is temporarily arranged on the under-bump layer and is then dissolved into the alloy solder on formation of the solder bump; and
metal that is a main component of the alloy solder. - View Dependent Claims (7, 11, 15, 19, 20, 25, 39, 53, 54)
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4. A semiconductor device having at least a solder bump formed of alloy solder on an under-bump layer including first metal formed on a wiring layer, comprising:
an alloy layer formed between the solder bump and the under-bump layer, wherein the alloy layer is composed of a combination of;
an intermetallic compound composed of second metal constituting a metal layer that is temporarily arranged on the under-bump layer and is then dissolved into the alloy solder on formation of the solder bump, and metal that is a main component of the alloy solder; and
an intermetallic compound of the first metal included in the under-bump layer and the metal that is the main component of the alloy solder. - View Dependent Claims (8, 12, 16, 27, 44, 45, 46, 47, 48, 50, 55, 56, 61, 64, 65, 66, 69, 70, 71, 74, 75, 76, 79, 80, 81, 84, 85, 86, 89, 90, 91, 95, 96, 100, 101, 104, 105, 106, 109, 110, 111, 114, 115, 116, 119, 122, 123, 124, 125, 126, 127, 130, 131, 132, 135, 136, 137, 140, 141, 142, 143, 144, 145, 146, 147, 148, 149, 151, 152, 153, 154, 155, 156, 157)
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57. A method for manufacturing a semiconductor device comprising at least a solder bump of alloy solder formed on a wiring layer via an under-bump layer including first metal, comprising the steps of:
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fusing alloy solder having second metal different from main component metal of the solder bump added thereto; and
cooling the fused alloy solder to deposit an intermetallic compound including the second metal and the main component metal of the alloy solder at an interface between the under-bump layer and the solder bump.
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58. A method for manufacturing a semiconductor device, comprising the steps of:
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forming, on a wiring layer, an under-bump layer including first metal which is to form a first intermetallic compound at an interface through reaction with alloy solder;
supplying alloy solder having second metal different from main component metal added thereto; and
forming an alloy layer at an interface between the under-bump layer and the alloy solder by temporary fusing the alloy solder before cooling, wherein the alloy layer is a combination of the first intermetallic compound and a second intermetallic compound of the main component metal of the alloy solder and the second metal.
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59. A method for manufacturing a semiconductor device with at least a solder bump made of alloy solder formed on a wiring layer via an under-bump layer including first metal, comprising the steps of:
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forming a metal layer of second metal on the under-bump layer; and
when forming the solder bump, fusing the entire metal layer into the alloy solder and then cooling it to deposit an intermetallic compound including the second metal and the main component metal of the alloy solder at an interface between the under-bump layer and the solder bump.
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60. A semiconductor device manufacturing method, comprising the steps of:
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forming, on a wiring layer, an under-bump layer, including first metal which is to form a first intermetallic compound at an interface through reaction with alloy solder;
forming a metal layer made of second metal which is to form a second intermetallic compound through reaction with the alloy solder;
supplying the alloy solder; and
forming an alloy layer at an interface between the under-bump layer and the alloy solder by cooling after temporary fusing of the alloy solder, wherein the alloy layer is a combination of the first intermetallic compound and the second intermetallic compound. - View Dependent Claims (62, 67, 72, 77, 82, 83, 87, 88, 92, 93, 94, 97, 98, 99, 102, 103, 107, 112, 117, 120, 128, 133, 138)
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63. A semiconductor device manufacturing method, comprising the steps of:
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forming, on a wiring layer, an under-bump layer including first metal which is to form a first intermetallic compound at an interface through reaction with alloy solder;
forming a metal layer made of second metal which is to form a second intermetallic compound through reaction with the alloy solder;
forming a thin film of tin on the metal layer and forming an alloy layer of the second metal and the tin; and
supplying the alloy solder. - View Dependent Claims (68, 73, 78, 108, 113, 118, 121, 129, 134, 139)
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150. A semiconductor manufacturing apparatus comprising:
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a stage for mounting a sample;
a heating section for heating the sample; and
a cooling section for cooling the sample from below.
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158. An electrode structure comprising:
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an under-bump layer;
a solder bump; and
an intermetallic compound formed between the under-bump layer and the solder bump.
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Specification