Semiconductor light emitting device
First Claim
1. A semiconductor light emitting device comprising two semiconductor layers and a light emitting region made of materials different from that of a substrate and formed in a layered structure on top of the surface of the substrate so that light generated in the light emitting region is emitted from said upper side semiconductor layer or lower side substrate, wherein at least one recess and/or protruding portion for scattering or diffracting light generated in said light emitting region is created in the surface portion of said substrate and said at least one recess and/or protruding portion is in a form that prevents crystal defects from occurring in said semiconductor layers.
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Accused Products
Abstract
A high external quantum efficiency is stably secured in a semiconductor light emitting device. At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.
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Citations
27 Claims
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1. A semiconductor light emitting device comprising two semiconductor layers and a light emitting region made of materials different from that of a substrate and formed in a layered structure on top of the surface of the substrate so that light generated in the light emitting region is emitted from said upper side semiconductor layer or lower side substrate,
wherein at least one recess and/or protruding portion for scattering or diffracting light generated in said light emitting region is created in the surface portion of said substrate and said at least one recess and/or protruding portion is in a form that prevents crystal defects from occurring in said semiconductor layers.
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20. A semiconductor light emitting device comprising a substrate, a plurality of semiconductor layers formed on said substrate and made of different materials from that of said substrate and an ohmic electrode formed on the surface of the top layer of said semiconductor layers so that light generated in said semiconductor layers is emitted from said ohmic electrode or from said substrate,
wherein at least one recess and/or protruding portion for scattering or diffracting light generated in said semiconductor layers is created in the surface of said substrate and the cross section of said recess is in a form of a reversed trapezoid and the cross section of said protruding portion is in a form of a trapezoid.
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23. A semiconductor light emitting device comprising a substrate, a plurality of semiconductor layers made of materials different from that of said substrate and an ohmic electrode covering almost the entirety of the surface of the top layer of said semiconductor layers so that light generated in said semiconductor layers is emitted from said ohmic electrode,
wherein at least one recess and/or protruding portion for scattering or diffracting light generated in said semiconductor layer is created in the surface of said substrate and at least one opening is created in said ohmic electrode.
Specification