Methods for making multiple seed layers for metallic interconnects
First Claim
1. A method for making metallic interconnects, which method is utilized at a stage of processing a substrate having a patterned insulating layer which includes at least one opening and a field surrounding the at least one opening, the field and the at least one opening being ready for depositing of one or more seed layers, which method comprises steps of:
- depositing a substantially conformal seed layer over the field and inside surfaces of the at least one opening;
depositing a substantially non-conformal seed layer over the substantially conformal seed layer, said substantially non-conformal seed layer being thicker than said substantially conformal seed layer over the field, wherein the substantially conformal and the substantially non-conformal seed layers do not seal the at least one opening; and
electroplating a metallic layer over the substantially non-conformal seed layer, wherein the electroplated metallic layer comprises a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals.
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Abstract
One embodiment of the present invention is a method for making metallic interconnects, which method is utilized at a stage of processing a substrate having a patterned insulating layer which includes at least one opening and a field surrounding the at least one opening, the field and the at least one opening being ready for depositing of one or more seed layers, which method includes steps of: (a) depositing a substantially conformal seed layer over the field and inside surfaces of the at least one opening; (b) depositing a substantially non-conformal seed layer over the substantially conformal seed layer, said substantially non-conformal seed layer being thicker than said substantially conformal seed layer over the field, wherein the substantially conformal and the substantially non-conformal seed layers do not seal the at least one opening; and (c) electroplating a metallic layer over the substantially non-conformal seed layer, wherein the electroplated metallic layer comprises a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals.
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Citations
80 Claims
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1. A method for making metallic interconnects, which method is utilized at a stage of processing a substrate having a patterned insulating layer which includes at least one opening and a field surrounding the at least one opening, the field and the at least one opening being ready for depositing of one or more seed layers, which method comprises steps of:
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depositing a substantially conformal seed layer over the field and inside surfaces of the at least one opening;
depositing a substantially non-conformal seed layer over the substantially conformal seed layer, said substantially non-conformal seed layer being thicker than said substantially conformal seed layer over the field, wherein the substantially conformal and the substantially non-conformal seed layers do not seal the at least one opening; and
electroplating a metallic layer over the substantially non-conformal seed layer, wherein the electroplated metallic layer comprises a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 57, 58, 59, 60, 61, 62, 63)
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28. A method for making metallic interconnects, which method is utilized at a stage of processing a substrate having a patterned insulating layer which includes at least one opening and a field surrounding the at least one opening, the field and the at least one opening being ready for depositing of one or more seed layers, which method comprises steps of:
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depositing a substantially non-conformal seed layer over the field and inside surfaces of the at least one opening;
depositing a substantially conformal seed layer over the substantially non-conformal seed layer, said substantially non-conformal seed layer being thicker than said substantially conformal seed layer over the field, wherein the substantially conformal and the substantially non-conformal seed layers do not seal the at least one opening; and
electroplating a metallic layer over the substantially conformal seed layer, wherein the electroplated metallic layer comprises a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 64, 65, 66, 67, 68, 69, 70)
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71. A method for making metallic interconnects, which method is utilized at a stage of processing a substrate having a patterned insulating layer which includes at least one opening and a field surrounding the at least one opening, the field and the at least one opening being ready for depositing of one or more seed layers, which method comprises steps of:
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depositing three or more seed layers over the field and inside surfaces of the at least one opening using at least two different deposition techniques, wherein the three or more seed layers do not seal the at least one opening, said at least two different deposition techniques comprise at least one substantially non-conformal deposition technique and at least one substantially conformal deposition technique; and
electroplating a metallic layer over the three or more seed layers, wherein the electroplated metallic layer comprises a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals. - View Dependent Claims (72, 73, 74, 75, 76, 77, 78, 79, 80)
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Specification