Low viscosity precursor compositons and methods for the depositon of conductive electronic features
First Claim
Patent Images
1. A metal precursor composition having a viscosity of not greater than 1000 centipoise, comprising:
- (a) a metal precursor compound; and
(b) a conversion reaction inducing agent in an amount sufficient to reduce the conversion temperature of said metal precursor composition by at least about 25°
C. compared to the dry metal precursor compound, wherein the conversion temperature of said metal precursor composition is not greater than about 200°
C.
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Abstract
A precursor composition for the deposition and formation of an electrical feature such as a conductive feature. The precursor composition advantageously has a low viscosity enabling deposition using direct-write tools. The precursor composition also has a low conversion temperature, enabling the deposition and conversion to an electrical feature on low temperature substrates. A particularly preferred precursor composition includes silver metal for the formation of highly conductive silver features.
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Citations
146 Claims
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1. A metal precursor composition having a viscosity of not greater than 1000 centipoise, comprising:
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(a) a metal precursor compound; and
(b) a conversion reaction inducing agent in an amount sufficient to reduce the conversion temperature of said metal precursor composition by at least about 25°
C. compared to the dry metal precursor compound, wherein the conversion temperature of said metal precursor composition is not greater than about 200°
C. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37)
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38. A metal precursor composition having a viscosity of not greater than about 1000 centipoise, comprising:
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(a) a silver metal compound;
(b) silver particles; and
(c) a conversion reaction inducing agent in amount sufficient to reduce the conversion temperature of said metal precursor composition by at least about 25°
C. as compared to the dry silver metal compound, wherein said metal precursor composition has a conversion temperature of not greater than about 250°
C. - View Dependent Claims (39, 40, 41, 42, 43, 44, 45, 46)
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47. A method for the fabrication of a conductive feature on a substrate, comprising the steps of:
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(a) providing a precursor composition comprising a silver metal precursor compound, wherein said precursor composition has a viscosity of not greater than about 50 centipoise and a surface tension of from about 20 to 50 dynes/cm;
(b) depositing said precursor composition on a substrate; and
(c) converting said precursor composition to a conductive feature by heating said precursor composition to a conversion temperature of not greater than about 250°
C., wherein said conductive feature has a resistivity of not greater than about 10 times the resistivity of the pure bulk silver. - View Dependent Claims (48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70)
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71. A method for the fabrication of a conductive feature on a substrate, comprising the steps of:
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(a) providing a precursor composition comprising a metal precursor compound, wherein said precursor composition has a viscosity of not greater than about 50 centipoise and a surface tension of from about 20 to 50 dynes/cm;
(b) depositing said precursor composition on a substrate; and
(c) converting said precursor composition to a conductive feature by heating said precursor composition to a conversion temperature of not greater than about 150°
C., wherein said conductive feature has a resistivity of not greater than about 100 times the resistivity of the pure bulk metal. - View Dependent Claims (72, 73, 74, 75, 76, 77, 78)
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79. A method for the fabrication of a conductive feature on a substrate, comprising the steps of:
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(a) providing a precursor composition comprising silver particles, wherein said precursor composition has a viscosity of not greater than about 50 centipoise and a surface tension of from about 20 to 50 dynes/cm;
(b) depositing said precursor composition on a substrate; and
(c) converting said precursor composition to a conductive feature by heating said precursor composition to a conversion temperature of not greater than about 150°
C., wherein said conductive feature has a resistivity of not greater than about 100 times the resistivity of the pure bulk metal. - View Dependent Claims (80, 81, 82, 83, 84, 85, 86)
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87. A method for the fabrication of an electronic device, comprising the steps of:
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(a) providing a substrate comprising at least a first non-linear element disposed on said substrate;
(b) depositing a low viscosity metal precursor composition onto said substrate in the form of a trace contacting said first non-linear element, wherein said precursor trace has a minimum size of not greater than about 200μ
m; and
(c) heating said deposited precursor composition to a temperature of not greater than about 200°
C. to form a conductive feature electrically coupled to said first non-linear element, said conductive feature having a minimum feature size of not greater than about 200 μ
m and a resistivity of not greater than about 200 times the resistivity of the bulk metal. - View Dependent Claims (88, 89, 90, 91, 92, 93, 94, 95, 96, 97, 98, 99, 100, 101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111, 112)
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113. A method for the fabrication of an electronic component, comprising the steps of:
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(a) depositing a low viscosity metal precursor composition onto said substrate in the form of a trace, wherein said precursor trace has a minimum size of not greater than about 200 μ
m;
(b) heating said deposited precursor composition to a temperature of not greater than about 200°
C. to form a conductive feature, said conductive feature having a minimum feature size of not greater than about 200 μ
m and a resistivity of not greater than about 200 times the resistivity of the bulk metal; and
(c) depositing at least a first non-linear element on said substrate, wherein said conductive feature is electrically coupled to said first non-linear element. - View Dependent Claims (114, 115, 116, 117, 118, 119, 120, 121, 122, 123, 124, 125, 126, 127, 128, 129, 130, 131, 132, 133, 134, 135, 136, 137)
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138. A method for the fabrication of an interconnect for at least first and second organic-based transistors in an electronic component, comprising the steps of:
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(a) depositing a silver metal precursor composition onto said substrate using an ink-jet device and in the form of a trace having a minimum size of not greater than about 100 μ
m; and
(b) heating said deposited precursor composition to a temperature of not greater than 200°
C. to form a conductive feature having a minimum feature size of not greater than about 100 μ
m and a resistivity of not greater than about 10 times the resistivity of bulk silver. - View Dependent Claims (139, 140, 141, 142, 143, 144, 145, 146)
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Specification