Low viscosity precursor compositons and methods for the depositon of conductive electronic features

• US 20030148024A1
• Filed: 10/04/2002
• Published: 08/07/2003
• Est. Priority Date: 10/05/2001
• Status: Abandoned Application

• Current Assignee: Cabot Corporation
• Original Assignee: Cabot Corporation
• Inventors: Vanheusden, Karel, Kunze, Klaus, Atanassova, Paolina, Hampden-Smith, Mark J., Kodas, Toivo T., Stump, Aaron D., Schult, Allen B., Denham, Hugh
• Application Number:
  US10/265,351
• Publication Number:
  US 20030148024A1
• Time in Patent Office: Days
• US Class Current: 427/125
• CPC Class Codes: C23C 18/06 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: C23C 18/08 characterised by the deposition of metallic material
• CPC Class Codes: H01B 1/026 Alloys based on copper
• CPC Class Codes: H01L 2224/05294 with a principal constituent of the material being a liquid not provided for in groups H01L2224/052 - H01L2224/05291
• CPC Class Codes: H01L 2224/053 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H05K 1/097 Inks comprising nanoparticles and specially adapted for being sintered at low temperature H05K1/095 takes precedence
• CPC Class Codes: H05K 2201/0154 Polyimide
• CPC Class Codes: H05K 2203/1131 Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
• CPC Class Codes: H05K 3/105 by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam

Abstract

A precursor composition for the deposition and formation of an electrical feature such as a conductive feature. The precursor composition advantageously has a low viscosity enabling deposition using direct-write tools. The precursor composition also has a low conversion temperature, enabling the deposition and conversion to an electrical feature on low temperature substrates. A particularly preferred precursor composition includes silver metal for the formation of highly conductive silver features.

Claims

1. A metal precursor composition having a viscosity of not greater than 1000 centipoise, comprising:

(a) a metal precursor compound; and

(b) a conversion reaction inducing agent in an amount sufficient to reduce the conversion temperature of said metal precursor composition by at least about 25°

C. compared to the dry metal precursor compound, wherein the conversion temperature of said metal precursor composition is not greater than about 200°

C.

2. A metal precursor composition as recited in claim 1, wherein said viscosity is not greater than about 100 centipoise.

3. A metal precursor composition as recited in claim 1, wherein said viscosity is not greater than about 50 centipoise.

4. A metal precursor composition as recited in claim 1, wherein said metal precursor compound is a silver metal carboxylate compound.

5. A metal precursor composition as recited in claim 1, wherein said metal precursor compound is a silver metal oxide.

6. A metal precursor composition as recited in claim 1, wherein said metal precursor compound is an inorganic silver compound.

7. A metal precursor composition as recited in claim 1, wherein said metal precursor compound is a silver halogenated carboxylate compound.

8. A metal precursor composition as recited in claim 1, wherein said metal precursor compound is silver trifluoroacetate.

9. A metal precursor composition as recited in claim 1, wherein said metal precursor composition comprises at least 40 wt. % percent metal.

10. A metal precursor composition as recited in claim 1, further comprising a crystallization inhibitor.

11. A metal precursor composition as recited in claim 1, further comprising a crystallization inhibitor selected from the group consisting of glycerol, glycolic acid, lactic acid, humectants and surfactants.

12. A metal precursor composition as recited in claim 1, wherein said conversion reaction inducing agent is a liquid that functions as a vehicle for said metal precursor composition.

13. A metal precursor composition as recited in claim 1, wherein said conversion reaction inducing agent is a liquid that functions as a solvent for said metal precursor compound.

14. Metal precursor composition as recited in claim 1, wherein said conversion reaction inducing agent is selected from the group consisting of alcohols, amines, amides, boranes, borohydrates, borohydrides, and organosilanes.

15. A metal precursor composition as recited in claim 1, wherein said conversion reaction inducing agent comprises an alcohol.

16. A metal precursor composition as recited in claim 1, wherein said conversion reaction inducing agent comprises an amine.

17. A metal precursor composition as recited in claim 1, wherein said conversion reaction inducing agent comprises an amide.

18. A metal precursor composition as recited in claim 1, wherein said conversion reaction inducing agent comprises terpineol.

19. A metal precursor composition as recited in claim 1, wherein said conversion reaction inducing agent comprises diethyleneglycol butylether (DEGBE).

20. A metal precursor composition as recited in claim 1, wherein said conversion reaction inducing agent comprises N,N-dimethyl acetamide (DMAc).

21. A metal precursor composition as recited in claim 1, wherein said conversion reaction inducing agent comprises diethyleneglycol butylether (DEGBE) and N,N-dimethyl acetamide (DMAc).

22. A metal precursor composition as recited in claim 1, wherein said conversion reaction inducing agent comprises N,N-dimethyl acetamide (DMAc) and terpineol.

23. A metal precursor composition as recited in claim 1, wherein said conversion reaction inducing agent comprises a palladium compound.

24. A metal precursor composition as recited in claim 1, wherein said conversion reaction inducing agent is selected from the group consisting of palladium acetate, palladium tetra-amine hydroxide, and palladium trifluoroacetate.

25. A metal precursor composition as recited in claim 1, wherein said conversion reducing agent comprises diethyleneglycol butylether (DEGBE) and the molar ratio of DEGBE to said metal precursor compound is from about 0.75 to about 1.25.

26. A metal precursor composition as recited in claim 1, further comprising a vehicle.

27. A metal precursor composition as recited in claim 1, further comprising a solvent wherein said metal precursor compound is dissolved in said solvent.

28. A metal precursor composition as recited in claim 1, further comprising a solvent wherein said metal precursor compound is suspended in said solvent.

29. A metal precursor composition as recited in claim 1, further comprising an aqueous-based solvent.

30. A metal precursor composition as recited in claim 1, further comprising particles.

31. A metal precursor composition as recited in claim 1, further comprising substantially spherical particles.

32. A metal precursor composition as recited in claim 1, further comprising metallic particles.

33. A metal precursor composition as recited in claim 1, further comprising silver metal particles.

34. A metal precursor composition as recited in claim 1, further comprising nanoparticles having a volume median particle size of not greater than 100 nanometers.

35. A metal precursor composition as recited in claim 1, further comprising nanoparticles having a volume median particle size of not greater than about 75 nanometers.

36. A metal precursor composition as recited in claim 1, wherein said precursor composition comprises said conversion reaction inducing agent in an amount sufficient to reduce the conversion temperature of said metal precursor compound by at least about 50°

C.

37. A metal precursor composition as recited in claim 1, wherein said precursor composition comprises said conversion reaction inducing agent in an amount sufficient to reduce the conversion temperature of said metal precursor compound by at least about 100°

C.

38. A metal precursor composition having a viscosity of not greater than about 1000 centipoise, comprising:

(a) a silver metal compound;

(b) silver particles; and

(c) a conversion reaction inducing agent in amount sufficient to reduce the conversion temperature of said metal precursor composition by at least about 25°

C. as compared to the dry silver metal compound, wherein said metal precursor composition has a conversion temperature of not greater than about 250°

C.

39. A metal precursor composition as recited in claim 38, wherein said silver metal compound is a silver carboxylate compound.

40. A metal precursor composition as recited in claim 38, wherein said conversion reaction inducing agent is an alcohol.

41. A metal precursor composition as recited in claim 38, wherein said conversion reaction inducing agent is ethylene glycol.

42. A metal precursor composition as recited in claim 38, wherein said conversion reaction inducing agent is terpineol.

43. A metal precursor composition as recited in claim 38, wherein said metal precursor composition has a viscosity of not greater than 100 centipoise.

44. A metal precursor composition as recited in claim 38, wherein said particles have a volume median particle size of not greater than 100 nanometers.

45. A metal precursor composition as recited in claim 38, wherein said metal precursor composition has a conversion temperature of not greater than 225°

C.

46. A metal precursor composition as recited in claim 38, wherein said metal precursor composition has a conversion temperature of not greater than 200°

C.

47. A method for the fabrication of a conductive feature on a substrate, comprising the steps of:

(a) providing a precursor composition comprising a silver metal precursor compound, wherein said precursor composition has a viscosity of not greater than about 50 centipoise and a surface tension of from about 20 to 50 dynes/cm;

(b) depositing said precursor composition on a substrate; and

(c) converting said precursor composition to a conductive feature by heating said precursor composition to a conversion temperature of not greater than about 250°

C., wherein said conductive feature has a resistivity of not greater than about 10 times the resistivity of the pure bulk silver.

48. A method as recited in claim 47, wherein said feature has a minimum feature size of not greater than about 100 μ

m.

49. A method as recited in claim 47, wherein said feature has a minimum feature size of not greater than about 75 μ

m.

50. A method as recited in claim 47, wherein said feature has a minimum feature size of not greater than about 50 μ

m.

51. A method as recited in claim 47, wherein said feature has a minimum feature size of not greater than about 25 μ

m.

52. A method as recited in claim 47, wherein said feature has a thickness of at least about 0.05 μ

m.

53. A method as recited in claim 47, wherein said feature has a thickness of at least about 0.1 μ

m.

54. A method as recited in claim 47, further comprising the step of modifying a first portion of said substrate, wherein said first portion is adapted to confine said deposited precursor composition.

55. A method as recited in claim 47, further comprising the step of modifying a first portion of said substrate, wherein said first portion is modified to have a surface energy that is different than the surface energy on a second portion of said substrate, and wherein said first portion is adapted to confine said deposited precursor composition.

56. A method as recited in claim 47, wherein said precursor composition further comprises metallic particles.

57. A method as recited in claim 47, wherein said precursor composition further comprises metallic nanoparticles.

58. A method as recited in claim 47, wherein said precursor composition further comprises a palladium compound.

59. A method as recited in claim 47, wherein said deposition step comprises depositing said precursor composition using a tool selected from the group consisting of an ink-jet device, a syringe dispense device, an aerosol jet, an intaglio printer, a roll printer and a sprayer.

60. A method as recited in claim 47, wherein said deposition step comprises depositing said precursor composition using an ink-jet device.

61. A method as recited in claim 47, wherein said conversion temperature is not greater than about 225°

C.

62. A method as recited in claim 47, wherein said conversion temperature is not greater than about 200°

C.

63. A method as recited in claim 47, wherein said conversion temperature is not greater than about 150°

C.

64. A method as recited in claim 47, wherein said heating step comprises heating said precursor composition using a laser.

65. A method as recited in claim 47, wherein said heating step comprises heating said precursor composition in a furnace.

66. A method as recited in claim 47, wherein said heating step comprises heating using an infrared lamp.

67. A method as recited in claim 47, wherein said conductive feature has a resistivity of not greater than about 6 times the pure bulk metal.

68. A method as recited in claim 47, wherein said conductive feature has a resistivity of not greater than about 4 times the pure bulk metal.

69. A method as recited in claim 47, wherein said conductive feature has a resistivity of not greater than about 2 times the pure bulk metal.

70. A method as recited in claim 47, wherein said substrate is selected from the group consisting of polyfluorinated compounds, polyimides, epoxies (including glass-filled epoxy), polycarbonate, cellulose-based materials (i.e. wood or paper), acetate, polyester, polyethylene, polypropylene, polyvinyl chloride, acrylonitrile, butadiene (ABS), flexible fiber board, non-woven polymeric fabric and cloth.

71. A method for the fabrication of a conductive feature on a substrate, comprising the steps of:

(a) providing a precursor composition comprising a metal precursor compound, wherein said precursor composition has a viscosity of not greater than about 50 centipoise and a surface tension of from about 20 to 50 dynes/cm;

(b) depositing said precursor composition on a substrate; and

(c) converting said precursor composition to a conductive feature by heating said precursor composition to a conversion temperature of not greater than about 150°

C., wherein said conductive feature has a resistivity of not greater than about 100 times the resistivity of the pure bulk metal.

72. A method as recited in claim 71, wherein said metal is silver.

73. A method as recited in claim 71, wherein said conductive feature has a resistivity of not greater than about 80 times the resistivity of the bulk metal.

74. A method as recited in claim 71, wherein said conversion temperature is not greater than about 100°

C.

75. A method as recited in claim 71, wherein said depositing step comprises depositing said precursor composition using a direct-write tool.

76. A method as recited in claim 71, wherein said depositing step comprises depositing said precursor composition using an ink-jet device.

77. A method as recited in claim 71, wherein said conductive feature has a minimum feature size of not greater than about 200 μ

m.

78. A method as recited in claim 71, wherein said conductive feature has a minimum feature size of not greater than about 100 μ

m.

79. A method for the fabrication of a conductive feature on a substrate, comprising the steps of:

(a) providing a precursor composition comprising silver particles, wherein said precursor composition has a viscosity of not greater than about 50 centipoise and a surface tension of from about 20 to 50 dynes/cm;

(b) depositing said precursor composition on a substrate; and

(c) converting said precursor composition to a conductive feature by heating said precursor composition to a conversion temperature of not greater than about 150°

C., wherein said conductive feature has a resistivity of not greater than about 100 times the resistivity of the pure bulk metal.

80. A method as recited in claim 79, wherein said particles are nanoparticles having an average size of not greater than about 100 nanometers.

81. A method as recited in claim 79, wherein said conductive feature has a resistivity of not greater than about 80 times the resistivity of the bulk metal.

82. A method as recited in claim 79, wherein said conversion temperature is not greater than about 100°

C.

83. A method as recited in claim 79, wherein said depositing step comprises depositing said precursor composition using a direct-write tool.

84. A method as recited in claim 79, wherein said depositing step comprises depositing said precursor composition using an ink-jet device.

85. A method as recited in claim 79, wherein said conductive feature has a minimum feature size of not greater than about 200 μ

m.

86. A method as recited in claim 79, wherein said conductive feature has a minimum feature size of not greater than about 100 μ

m.

87. A method for the fabrication of an electronic device, comprising the steps of:

(a) providing a substrate comprising at least a first non-linear element disposed on said substrate;

(b) depositing a low viscosity metal precursor composition onto said substrate in the form of a trace contacting said first non-linear element, wherein said precursor trace has a minimum size of not greater than about 200μ

m; and

(c) heating said deposited precursor composition to a temperature of not greater than about 200°

C. to form a conductive feature electrically coupled to said first non-linear element, said conductive feature having a minimum feature size of not greater than about 200 μ

m and a resistivity of not greater than about 200 times the resistivity of the bulk metal.

88. A method as recited in claim 87, wherein said minimum size of said trace and said conductive feature is not greater than about 100 μ

m.

89. A method as recited in claim 87, wherein said minimum size of said trace and said conductive feature is not greater than about 75 μ

m.

90. A method as recited in claim 87, wherein said minimum feature size of said trace and said conductive feature is not greater than about 50 μ

m.

91. A method as recited in claim 87, wherein said minimum feature size of said trace and said conductive feature is not greater than about 25 μ

m.

92. A method as recited in claim 87, wherein said conductive feature has a thickness of at least about 0.05 μ

m.

93. A method as recited in claim 87, wherein said conductive feature has a thickness of at least about 0.1 μ

m.

94. A method as recited in claim 87, further comprising the step of modifying a first portion of said substrate, wherein said first portion is adapted to confine said deposited precursor composition.

95. A method as recited in claim 87, further comprising the step of modifying a first portion of said substrate, wherein said first portion is modified to have a surface energy that is different than the surface energy on a second portion of said substrate, and wherein said first portion is adapted to confine said deposited precursor composition.

96. A method as recited in claim 87, wherein said heating step comprises heating to a temperature of not greater than about 185°

C.

97. A method as recited in claim 87, wherein said heating step comprises heating to a temperature of not greater than about 150°

C.

98. A method as recited in claim 87, wherein said heating step comprises heating to a temperature of not greater than about 125°

C.

99. A method as recited in claim 87, wherein said substrate is a flexible substrate.

100. A method as recited in claim 87, wherein said substrate is an organic substrate.

101. A method as recited in claim 87, wherein said substrate is a polymer substrate.

102. A method as recited in claim 87, wherein said substrate is a glass substrate.

103. A method as recited in claim 87, wherein said metal precursor composition has a viscosity of not greater than about 50 centipoise.

104. A method as recited in claim 87, wherein said depositing step comprises depositing said precursor composition using an ink-jet device.

105. A method as recited in claim 87, wherein said first non-linear element is selected from the group consisting of a diode, a display pixel and a transistor.

106. A method as recited in claim 87, wherein said first non-linear element is an organic transistor.

107. A method as recited in claim 87, wherein said electronic device is an organic light emitting display.

108. A method as recited in claim 87, wherein said metal is silver.

109. A method as recited in claim 87, wherein said conductive trace has a resistivity of not greater than about 100 times the resistivity of the bulk metal.

110. A method as recited in claim 87, wherein said conductive trace has a resistivity of not greater than about 20 times the resistivity of the bulk metal.

111. A method as recited in claim 87, wherein said conductive trace has a resistivity of not greater than about 10 times the resistivity of the bulk conductor.

112. A method as recited in claim 87, wherein said conductive trace has a resistivity of not greater than about 6 times the resistivity of the bulk conductor.

113. A method for the fabrication of an electronic component, comprising the steps of:

(a) depositing a low viscosity metal precursor composition onto said substrate in the form of a trace, wherein said precursor trace has a minimum size of not greater than about 200 μ

m;

(b) heating said deposited precursor composition to a temperature of not greater than about 200°

C. to form a conductive feature, said conductive feature having a minimum feature size of not greater than about 200 μ

m and a resistivity of not greater than about 200 times the resistivity of the bulk metal; and

(c) depositing at least a first non-linear element on said substrate, wherein said conductive feature is electrically coupled to said first non-linear element.

114. A method as recited in claim 113, wherein said minimum size of said trace and said conductive feature is not greater than about 100 μ

m.

115. A method as recited in claim 113, wherein said minimum size of said trace and said conductive feature is not greater than about 75 μ

m.

116. A method as recited in claim 113, wherein said minimum feature size of said trace and said conductive feature is not greater than about 50 μ

m.

117. A method as recited in claim 113, wherein said minimum feature size of said trace and said conductive feature is not greater than about 25 μ

m.

118. A method as recited in claim 113, wherein said conductive feature has a thickness of at least about 0.05 μ

m.

119. A method as recited in claim 113, wherein said conductive feature has a thickness of at least about 0.1 μ

m.

120. A method as recited in claim 113, further comprising the step of modifying a first portion of said substrate, wherein said first portion is adapted to confine said deposited precursor composition.

121. A method as recited in claim 113, further comprising the step of modifying a first portion of said substrate, wherein said first portion is modified to have a surface energy that is different than the surface energy on a second portion of said substrate, and wherein said first portion is adapted to confine said deposited precursor composition.

122. A method as recited in claim 113, wherein said heating step comprises heating to a temperature of not greater than about 185°

C.

123. A method as recited in claim 113, wherein said heating step comprises heating to a temperature of not greater than about 150°

C.

124. A method as recited in claim 113, wherein said substrate is a flexible substrate.

125. A method as recited in claim 113, wherein said substrate is an organic substrate.

126. A method as recited in claim 113, wherein said substrate is a polymer substrate.

127. A method as recited in claim 113, wherein said substrate is a glass substrate.

128. A method as recited in claim 113, wherein said metal precursor composition has a viscosity of not greater than about 50 centipoise.

129. A method as recited in claim 113, wherein said depositing step comprises depositing said precursor composition using an ink-jet device.

130. A method as recited in claim 113, wherein said first non-linear element is selected from the group consisting of a diode, a display pixel and a transistor.

131. A method as recited in claim 113, wherein said first non-linear element is an organic transistor.

132. A method as recited in claim 113, wherein said electronic device is an organic light emitting display.

133. A method as recited in claim 113, wherein said metal is silver.

134. A method as recited in claim 113, wherein said conductive trace has a resistivity of not greater than about 100 times the resistivity of the bulk metal.

135. A method as recited in claim 113, wherein said conductive trace has a resistivity of not greater than about 20 times the resistivity of the bulk metal.

136. A method as recited in claim 113, wherein said conductive trace has a resistivity of not greater than about 10 times the resistivity of the bulk conductor.

137. A method as recited in claim 113, wherein said conductive trace has a resistivity of not greater than about 6 times the resistivity of the bulk conductor.

138. A method for the fabrication of an interconnect for at least first and second organic-based transistors in an electronic component, comprising the steps of:

(a) depositing a silver metal precursor composition onto said substrate using an ink-jet device and in the form of a trace having a minimum size of not greater than about 100 μ

m; and

(b) heating said deposited precursor composition to a temperature of not greater than 200°

C. to form a conductive feature having a minimum feature size of not greater than about 100 μ

m and a resistivity of not greater than about 10 times the resistivity of bulk silver.

139. A method as recited in claim 138, further comprising the step of modifying a first portion of said substrate, wherein said first portion is adapted to confine said deposited precursor composition.

140. A method as recited in claim 138, further comprising the step of modifying a first portion of said substrate, wherein said first portion is modified to have a surface energy that is different than the surface energy on a second portion of said substrate, and wherein said first portion is adapted to confine said deposited precursor composition.

141. A method as recited in claim 138, wherein said minimum size of said trace and said conductive feature is not greater than about 100 μ

m.

142. A method as recited in claim 138, wherein said minimum size of said trace and said conductive feature is not greater than about 75 μ

m.

143. A method as recited in claim 138, wherein said minimum feature size of said trace and said conductive feature is not greater than about 50 μ

m.

144. A method as recited in claim 138, wherein said minimum feature size of said trace and said conductive feature is not greater than about 25 μ

m.

145. A method as recited in claim 138, wherein said conductive feature has a thickness of at least about 0.05 μ

m.

146. A method as recited in claim 138, wherein said conductive feature has a thickness of at least about 0.1 μ

m.