Semiconductor element and semiconductor device using the same
First Claim
1. A semiconductor element comprising:
- a first crystalline semiconductor region having pluralities of crystal orientation over an insulating surface without including a crystal grain boundary substantially;
a second crystalline semiconductor region which is conductive, said first crystalline semiconductor region connected to a second crystalline semiconductor region, wherein the first crystalline semiconductor region is extended in a direction parallel to an insulating film which extends in linear-shaped stripe pattern over the insulating surface, and the second crystalline semiconductor region is provided ranging over the insulating film which extends in the linear-shaped stripe pattern.
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Accused Products
Abstract
A semiconductor element with high current drive capability, capable of high-speed operation, and having little variation in pluralities of semiconductor elements is provided. It is characterized by the fact that semiconductor elements have a first crystalline semiconductor region including pluralities of crystal orientations, and the first crystalline semiconductor region being connected to a second crystalline semiconductor region which is conductive, wherein the first crystalline semiconductor region is extended in the direction parallel to the insulating film which extends in linear-shaped stripe pattern on the insulating surface, and the second crystalline semiconductor region is provided ranging over the insulating film which extends in linear-shaped stripe pattern.
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Citations
20 Claims
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1. A semiconductor element comprising:
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a first crystalline semiconductor region having pluralities of crystal orientation over an insulating surface without including a crystal grain boundary substantially;
a second crystalline semiconductor region which is conductive, said first crystalline semiconductor region connected to a second crystalline semiconductor region, wherein the first crystalline semiconductor region is extended in a direction parallel to an insulating film which extends in linear-shaped stripe pattern over the insulating surface, and the second crystalline semiconductor region is provided ranging over the insulating film which extends in the linear-shaped stripe pattern. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor element comprising:
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a first crystalline semiconductor region including pluralities of crystal orientations over an insulating surface without including a crystal grain boundary substantially;
a second crystalline semiconductor region which is conductive, said first crystalline semiconductor region connected to the second crystalline semiconductor region, wherein the first crystalline semiconductor region is extended in a direction parallel to the insulating film which extends in linear-shaped stripe pattern over the insulating surface, and the second crystalline semiconductor region is used as a wiring provided ranging over the insulating film which extends in the linear-shaped stripe pattern. - View Dependent Claims (7, 8, 9, 10)
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11. A semiconductor element comprising:
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a first crystalline semiconductor region including pluralities of crystal orientations over an insulating surface without including a crystal grain boundary substantially;
a second crystalline semiconductor region which is conductive, said first crystalline semiconductor region connected to the second crystalline semiconductor region, wherein the first crystalline semiconductor region is extended in a direction parallel to the insulating film which extends in linear-shaped stripe pattern over the insulating surface, the second crystalline semiconductor region is provided ranging over the insulating film which extends in the linear-shaped stripe pattern, and the second crystalline semiconductor region includes a portion with thinner film than that of the first crystalline semiconductor region. - View Dependent Claims (12, 13, 14, 15)
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16. A semiconductor element comprising:
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a first crystalline semiconductor region including a pluralities of crystal orientations without including crystal grain boundary substantially over the insulating surface;
a second crystalline semiconductor region which is conductive, said first crystalline semiconductor region connected to the second crystalline semiconductor region, wherein the first crystalline semiconductor region is extended in a direction parallel to the insulating film which extends in linear-shaped stripe pattern over the insulating surface, the second crystalline semiconductor region is used as wiring provided ranging over the insulating film which extends in linear-shaped stripe pattern, and the second crystalline semiconductor region includes a portion with thinner film than that of the first crystalline semiconductor region. - View Dependent Claims (17, 18, 19, 20)
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Specification