Vertical proximity processor

• US 20040060581A1
• Filed: 03/31/2003
• Published: 04/01/2004
• Est. Priority Date: 09/30/2002
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Woods, Carl, Ravkin, Mike, Redeker, Fred C., Garcia, James P., Larios, John de
• Granted Patent: US 7,069,937 B2
• Time in Patent Office: Days
• US Class Current: 134/30
• CPC Class Codes: B08B 3/04 Cleaning involving contact with liquid
• CPC Class Codes: C25D 17/001 Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
• CPC Class Codes: C25D 5/34 Pretreatment of metallic surfaces to be electroplated
• CPC Class Codes: H01L 21/67028 for cleaning followed by drying, rinsing, stripping, blasting or the like
• CPC Class Codes: H01L 21/67034 for drying
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/68707 the wafers being placed on a robot blade, or gripped by a gripper for conveyance
• CPC Class Codes: Y10S 134/902 Semiconductor wafer

Abstract

A method for processing a substrate is provided which includes generating a fluid meniscus on the surface of the vertically oriented substrate, and moving the fluid meniscus over the surface of the vertically oriented substrate to process the surface of the substrate.

Claims

1. A method for processing a substrate, the substrate being substantially vertically oriented, comprising:

generating a fluid meniscus on the surface of the vertically oriented substrate; and

moving the fluid meniscus over the surface of the vertically oriented substrate to process the surface of the substrate.

2. A method for processing a substrate as recited in claim 1, wherein generating the fluid meniscus includes,

applying a first fluid onto a first region of the surface of the substrate;

applying a second fluid onto a second region of the surface of the substrate; and

removing the first fluid and the second fluid from the surface of the substrate, the removing occurring from a third region that substantially surrounds the first region;

wherein the second region substantially surrounds at least a portion of the third region, and the applying and the removing forms the fluid meniscus.

3. A method for processing substrate as recited in claim 2, wherein the first fluid is one of DIW and a cleaning fluid.

4. A method for processing substrate as recited in claim 2, wherein the second fluid is one of isopropyl alcohol (IPA) vapor, organic compounds, hexanol, ethyl glycol, and compounds miscible with water.

5. A method for processing substrate as recited in claim 2, wherein the removing the first fluid and the second fluid includes applying a vacuum in close proximity to the surface of the substrate.

6. A method for processing substrate as recited in claim 1, wherein the meniscus extends to at least a diameter of the substrate and moves from a top region of the wafer to a bottom region of the wafer.

7. A method for processing substrate as recited in claim 1, wherein the processing the surface of the substrate includes at least one of a drying, rinsing, and cleaning operation.

8. A method for processing substrate as recited in claim 1, wherein generating the meniscus includes,

supplying a first fluid at a first region on the surface of the substrate;

surrounding the first region with a vacuum region;

semi-enclosing the vacuum region with an applied surface tension reducing fluid region, the semi-enclosing defining an opening that leads to the vacuum region.

9. A method for processing a substrate as recited in claim 1, further comprising:

generating an additional fluid meniscus on an additional surface of the vertically oriented substrate; and

moving the additional fluid meniscus over the additional surface of the vertically oriented substrate to process the additional surface of the substrate.

18. A method for processing substrate as recited in claim 1, wherein the fluid meniscus performs at least one of a drying, rinsing, and cleaning operation.

10. A substrate preparation apparatus to be used in substrate processing operations, comprising:

an arm capable of vertical movement between a first edge of the substrate to a second edge of the substrate; and

a head coupled to the arm, the head being capable of forming a fluid meniscus on a surface of the substrate and capable of being moved over the surface of the substrate.

11. A substrate preparation apparatus as recited in claim 10, wherein the head includes,

at least one of a first source inlet for delivering a first fluid to the surface of the substrate through the head;

at least one of a second source inlet for delivering a second fluid to the surface of the substrate through the head, the second fluid being different than the first fluid; and

at least one of a source outlet for removing each of the first fluid and the second fluid from the surface of the substrate, the at least one of the source outlet being located to substantially surround the at least one of the first source inlet, and the at least one of the first source inlet, the at least one of the second source inlet, and the at least one of the source outlet being configured to act substantially simultaneously when in operation;

wherein the at least one of the second source inlet surrounds at least a trailing edge side of the at least one of the source outlet.

12. A substrate preparation apparatus as recited in claim 10, wherein the arm is configured to move the head down a diameter of the substrate.

13. A substrate preparation apparatus as recited in claim 10, wherein the head extends at least a diameter of the substrate.

14. A substrate preparation apparatus as recited in claim 10, wherein the fluid meniscus has a length of at least a diameter of the substrate excluding the exclusion region.

15. A substrate preparation apparatus as recited in claim 10, wherein the proximity head extends at least a radius of the substrate.

16. A substrate preparation apparatus as recited in claim 10, wherein the proximity head extends at least a diameter of the substrate.

17. A substrate preparation apparatus as recited in claim 10, wherein the arm is capable of moving the proximity head into close proximity of the substrate.

19. A manifold for use in preparing a wafer surface, comprising:

a first process window in a first portion of the manifold being configured generate a first fluid meniscus on the wafer surface; and

a second process window in a second portion of the manifold being configured to generate a second fluid meniscus on the wafer surface.

20. A manifold for use in preparing a wafer surface as recited in claim 20, wherein the first fluid meniscus cleans the wafer surface and the second fluid meniscus cleans and dries the wafer surface.

21. A manifold for use in preparing a wafer surface as recited in claim 20, further comprising,

a third process window in a third portion of the manifold being configured to generate a third fluid meniscus on the wafer surface, the third fluid meniscus drying the wafer surface.

22. A manifold for use in preparing a wafer surface as recited in claim 20, wherein, the first process window is on a leading edge side of the manifold.