LIGHT EMITTING DIODE HAVING AN ADHESIVE LAYER AND A REFLECTIVE LAYER AND MANUFACTURING METHOD THEREOF

• US 20040104393A1
• Filed: 07/04/2003
• Published: 06/03/2004
• Est. Priority Date: 07/15/2002
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Liu, Wen-Huang, Hsieh, Min-Hsun, Tseng, Tzu-Feng, Wang, Jen-Shui, Yeh, Ting-Wei
• Granted Patent: US 6,987,287 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A light emitting diode having an adhesive layer and a reflective layer and a manufacturing method thereof featured by adhering together a light emitting diode stack and a substrate having a reflective metal layer by use of a transparent adhesive layer so that the light rays directed to the reflective metal layer can be reflected therefrom to improve the brightness of the light emitting diode.

Claims

1. A method for manufacturing a light emitting diode having an adhesive layer and a reflective layer, comprising at least the steps of:

forming an LED stack over a first substrate;

forming a first reaction layer over said LED stack;

forming a reflective layer over a second substrate;

forming a second reaction layer over said reflective layer; and

holding together said first reaction layer and said second reaction layer by means of a transparent adhesive layer.

2. A method for manufacturing a light emitting diode having an adhesive layer and a reflective layer according to claim 1, wherein said reflective layer is a reflective metal layer.

3. A method for manufacturing a light emitting diode having an adhesive layer and a reflective layer according to claim 2, wherein said reflective metal layer comprises at least a material selected from the group consisting of In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, AuZn, and the like.

4. A method for manufacturing a light emitting diode having an adhesive layer and a reflective layer according to claim 1, wherein said reflective layer is a reflective oxide layer.

5. A method for manufacturing a light emitting diode having an adhesive layer and a reflective layer according to claim 4, wherein said reflective oxide layer comprises at least a material selected from the group consisting of SiNx, SiO₂, Al2O3, TiO2, MgO, and the like.

6. A method for manufacturing a light emitting diode having an adhesive layer and a reflective layer according to claim 1, wherein said transparent adhesive layer comprises at least a material selected from the group consisting of polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), and the like.

7. A method for manufacturing a light emitting diode having an adhesive layer and a reflective layer according to claim 1, wherein said first reaction layer or said second reaction layer comprises at least a material selected from the group consisting of SiNx, Ti, Cr, and the like.

8. A method for manufacturing a light emitting diode having an adhesive layer and a reflective layer according to claim 1, wherein forming a reflective layer over a second substrate comprises the steps of forming a semiconductor stack over said second substrate and forming a reflective layer over said semiconductor stack.

9. A method for manufacturing a light emitting diode having an adhesive layer and a reflective layer according to claim 1, further comprising the step of removing said first substrate.

10. A method for manufacturing a light emitting diode having an adhesive layer and a reflective layer, comprising at least the steps of:

forming an LED stack over a first substrate;

forming a first reaction layer over said LED stack;

forming a second reaction layer over areflective metal substrate; and

holding together said first reaction layer and said second reaction layer by means of a transparent adhesive layer.

11. A method for manufacturing a light emitting diode having an adhesive layer and a reflective layer according to claim 10, wherein said reflective metal substrate comprises at least a material selected from the group consisting of Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, AuZn, and the like.

12. A method for manufacturing a light emitting diode having an adhesive layer and a reflective layer according to claim 10, wherein said transparent adhesive layer comprises at least a material selected from the group consisting of polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), and the like.

13. A method for manufacturing a light emitting diode having an adhesive layer and a reflective layer according to claim 10, wherein said first reaction layer or said second reaction layer comprises at least a material selected from the group consisting of SiNx, Ti, Cr, and the like.

14. A method for manufacturing a light emitting diode having an adhesive layer and a reflective layer according to claim 10, wherein the step of forming a second reaction layer over a reflective metal substrate comprises the steps of forming a reflective layer over said reflective metal substrate and forming a second reaction layer over said reflective layer.

15. A method for manufacturing a light emitting diode having an adhesive layer and a reflective layer according to claim 10, further comprising the step of removing said first substrate.

16. A method for manufacturing a light emitting diode having an adhesive layer and a reflective layer, comprising at least the steps of:

forming an LED stack over a first substrate;

forming a reflective layer over said LED stack;

forming a first reaction layer over said reflective layer;

forming a second reaction layer over a second substrate; and

holding together said first reaction layer and said second reaction layer by means of an adhesive layer.

17. A method for manufacturing a light emitting diode having an adhesive layer and a reflective layer according to claim 16, wherein said reflective layer is a reflective metal layer.

18. A method for manufacturing a light emitting diode having an adhesive layer and a reflective layer according to claim 16, wherein said reflective layer is a reflective oxide layer.

19. A method for manufacturing a light emitting diode having an adhesive layer and a reflective layer according to claim 17, wherein said reflective metal layer comprises at least a material selected from the group consisting of In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, AuZn, and the like.

20. A method for manufacturing a light emitting diode having an adhesive layer and a reflective layer according to claim 18, wherein said reflective oxide layer comprises at least a material selected from the group consisting of SiNx, SiO₂, Al2O3, TiO2, MgO, and the like.

21. A method for manufacturing a light emitting diode having an adhesive layer and a reflective layer according to claim 16, wherein said first reaction layer or said second reaction layer comprises at least a material selected from the group consisting of SiNx, Ti, Cr, and the like.

22. A method for manufacturing a light emitting diode having an adhesive layer and a reflective layer according to claim 16, further comprising the step of removing said first substrate.

23. A light emitting diode having an adhesive layer and a reflective layer, comprising at least:

a substrate;

a reflective layer formed over the substrate;

a first reaction layer formed over said reflective layer;

a transparent adhesive layer formed over said first reaction layer;

a second reaction layer formed over said transparent adhesive layer; and

an LED stack formed over said second reaction layer.

24. A light emitting diode having an adhesive layer and a reflective layer according to claim 23, further comprising a transparent conductive layer between said second reaction layer and said LED stack.

25. A light emitting diode having an adhesive layer and a reflective layer according to claim 23, wherein said reflective layer is a reflective metal layer.

26. A light emitting diode having an adhesive layer and a reflective layer according to claim 23, wherein said reflective layer is a reflective oxide layer.

27. A light emitting diode having an adhesive layer and a reflective layer according to claim 25, wherein said reflective metal layer comprises at least a material selected from the group consisting of In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, AuZn, and the like.

28. A light emitting diode having an adhesive layer and a reflective layer according to claim 26, wherein said reflective oxide layer comprises at least a material selected from the group consisting of SiNx, SiO₂, Al2O3, TiO2, MgO, and the like.

29. A light emitting diode having an adhesive layer and a reflective layer according to claim 23, wherein said transparent adhesive layer comprises at least a material selected from the group consisting of polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), and the like.

30. A light emitting diode having an adhesive layer and a reflective layer according to claim 23, wherein said first reaction layer or said second reaction layer comprises at least a material selected from the group consisting of SiNx, Ti, Cr, and the like.

31. A light emitting diode having an adhesive layer and a reflective layer, comprising at least:

a substrate;

a first reaction layer formed over the substrate;

a adhesive layer formed over said first reaction layer;

a second reaction layer formed over said adhesive layer;

a reflective layer formed over said second reaction layer; and

an LED stack formed over said reflective layer.

32. A light emitting diode having an adhesive layer and a reflective layer according to claim 31, further comprising a transparent conductive layer between said reflective layer and said LED stack.

33. A light emitting diode having an adhesive layer and a reflective layer according to claim 31, wherein said reflective layer is a reflective metal layer.

34. A light emitting diode having an adhesive layer and a reflective layer according to claim 31, wherein said reflective layer is a reflective oxide layer.

35. A light emitting diode having an adhesive layer and a reflective layer according to claim 33, wherein said reflective metal layer comprises at least a material selected from the group consisting of In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, AuZn, and the like.

36. A light emitting diode having an adhesive layer and a reflective layer according to claim 34, wherein said reflective oxide layer comprises at least a material selected from the group consisting of SiNx, SiO₂, Al2O3, TiO2, MgO, and the like.

37. A light emitting diode having an adhesive layer and a reflective layer according to claim 31, wherein said transparent adhesive layer comprises at least a material selected from the group consisting of polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), and the like.

38. A light emitting diode having an adhesive layer and a reflective layer according to claim 31, wherein said first reaction layer or said second reaction layer comprises at least a material selected from the group consisting of SiNx, Ti, Cr, and the like.

39. A light emitting diode having an adhesive layer and a reflective layer, comprising at least:

a reflective metal substrate;

a first reaction layer formed over the reflective metal substrate;

a transparent adhesive layer formed over said first reaction layer;

a second reaction layer formed over said transparent adhesive layer; and

an LED stack formed over said second reaction layer.

40. A light emitting diode having an adhesive layer and a reflective layer according to claim 39, further comprising a transparent conductive layer between said second reaction layer and said LED stack.

41. A light emitting diode having an adhesive layer and a reflective layer according to claim 39, wherein said reflective metal substrate comprises at least a material selected from the group consisting of Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, AuZn, and the like.

42. A light emitting diode having an adhesive layer and a reflective layer according to claim 39, wherein said transparent adhesive layer comprises at least a material selected from the group consisting of polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), and the like.

43. A light emitting diode having an adhesive layer and a reflective layer according to claim 39, wherein said first reaction layer or said second reaction layer comprises at least a material selected from the group consisting of SiNx, Ti, Cr, and the like.