Transparent oxide semiconductor thin film transistors
First Claim
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1. A process for depositing undoped transparent oxide semiconductors, selected from the group consisting of zinc oxide, indium oxide, tin oxide, and cadmium oxide, in a field effect transistor, comprising a method selected from the group consisting of:
- a) physical vapor deposition of undoped TOS in an effective partial pressure of oxygen mixed with an inert gas;
b) resistive evaporation of undoped TOS in an effective partial pressure of oxygen;
c) laser evaporation of undoped TOS in an effective partial pressure of oxygen;
d) electron beam evaporation of undoped T-OS in an effective partial pressure of oxygen; and
e) chemical vapor deposition of undoped T-OS in an effective partial pressure of oxygen.
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Abstract
This invention relates to novel, transparent oxide semiconductor thin film transistors (TFT'"'"'s) and a process for making them.
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Citations
24 Claims
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1. A process for depositing undoped transparent oxide semiconductors, selected from the group consisting of zinc oxide, indium oxide, tin oxide, and cadmium oxide, in a field effect transistor, comprising a method selected from the group consisting of:
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a) physical vapor deposition of undoped TOS in an effective partial pressure of oxygen mixed with an inert gas;
b) resistive evaporation of undoped TOS in an effective partial pressure of oxygen;
c) laser evaporation of undoped TOS in an effective partial pressure of oxygen;
d) electron beam evaporation of undoped T-OS in an effective partial pressure of oxygen; and
e) chemical vapor deposition of undoped T-OS in an effective partial pressure of oxygen. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 15)
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- 14. A transistor comprising an undoped transparent oxide semiconductor.
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