High luminescent light emitting diode
First Claim
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1. A method for dicing a AlInGaN based LED wafer, the method comprising providing a transparent substrate formed of a material having a crystal structure which facilitates breaking of the AlInGaN based LED wafer in a substantially consistent and desirable manner without substantial thinning thereof.
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Abstract
A method for dicing a wafer includes providing a wafer formed of a material having a crystal structure which facilitates breaking of the wafer in a substantially consistent and desirable manner without thinning thereof. For example, a wafer formed of Spinal may be used to form die having a thickness greater than 200 micrometers, such that a high luminance AlInGaN based light emitting diode can be formed thereon.
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Citations
70 Claims
- 1. A method for dicing a AlInGaN based LED wafer, the method comprising providing a transparent substrate formed of a material having a crystal structure which facilitates breaking of the AlInGaN based LED wafer in a substantially consistent and desirable manner without substantial thinning thereof.
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6. A method for dicing a AlInGaN based LED wafer, the method comprising:
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providing a transparent substrate formed of a material having a crystal structure which tends to facilitate propagation of cracks from one flat surface to another flat surface therethrough in a manner which facilitates the formation of generally square die; and
breaking the wafer so as to form a plurality of die.
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7. A method for dicing a AlInGaN based LED wafer, the method comprising providing a transparent substrate formed of a material having a crystal structure and breaking the wafer along cleavage planes of the crystal material so as to form generally square die.
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8. A method for processing a AlInGaN based LED wafer, the method comprising:
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providing a wafer, the wafer comprising a crystalline substrate material which has a crystal structure, the crystal structure defining at least two orthogonal cleavage planes which facilitate the formation of die having a desired geometric configuration; and
dicing the wafer. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A method for forming a AlInGaN LED, the method comprising:
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providing a substrate, the substrate comprising a crystalline material which has a crystal structure, the crystal structure defining at least two generally orthogonal cleavage planes which facilitate the formation of die having a desired geometric configuration and the substrate being substantially transparent to light of at least one wavelength;
forming a plurality of separate LED structures upon the substrate; and
dicing the substrate. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30)
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31. An AlInGaN LED formed by a method comprising:
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providing a AlInGaN LED wafer, the wafer comprising a crystalline substrate material which has a crystal structure, the crystal structure defining at least two cleavage planes which are generally orthogonal with respect to one another so as to facilitate the formation of die having a desired geometric configuration; and
dicing the wafer.
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- 32. A AlInGaN LED die having a top, a bottom and a plurality of sides, the die comprising a substrate material having a crystal structure and wherein all of the sides are substantially defined by a cleavage plane of the crystal.
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34. An AlInGaN based device comprising:
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a substrate having all sides defined substantially by cleavage planes of a crystal; and
an integrated circuit formed upon the substrate.
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35. An AlInGaN based LED comprising:
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a substrate comprising a crystalline material having a crystal structure, all sides of the substrate being defined by cleavage planes of the crystal structure; and
an AlInGaN p-n junction formed upon the substrate. - View Dependent Claims (36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
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46. A device comprising an AlInGaN LED having a backside reflector formed upon a substrate thereof, the substrate comprising at least one of MgO, ZnO and Spinel.
- 47. An AlInGaN based LED comprising a substantially transparent substrate which is thicker than 110 micrometers the substrate comprising at least one of sapphire (Al2O3), Spinel, ZnO, MgO, GaN, AlN, AlGaN.
- 49. An AlInGaN based LED comprising a substantially transparent substrate which is thicker than approximately 110 micrometers and having a backside reflector formed upon the substrate, the substrate comprising at least one of sapphire (Al2O3), Spinel, ZnO, MgO, GaN, AlN, AlGaN, SiC.
- 52. An AlInGaN based LED die comprising a substantially transparent substrate which is thicker than approximately 110 micrometers and wherein all sides of the die are defined by cleavage planes of the substrate material, the substrate comprising at least one of sapphire (Al2O3), Spinel, ZnO, MgO, GaN, AlN, AlGaN, SiC.
- 59. An AlInGaN based LED die comprising a substantially transparent substrate which is thicker than approximately 110 micrometers, the substrate having a backside reflector formed thereon, all sides of the substrate being by cleavage planes of the substrate material.
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68. A lamp comprising:
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an LED having a substrate, the substrate having a thickness greater than 110 micrometers and being substantially transparent to light of at least one wavelength;
a housing generally surrounding the LED;
leads extending into the housing and configured to provide electrical power to the LED; and
optics configured to provide a desired light emission pattern.
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69. A surface mount device comprising:
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an LED having a substrate, the substrate having a thickness greater than 110 micrometers and being substantially transparent to light of at least one wavelength;
a casing within which the LED is substantially disposed; and
leads extending into the casing and configured to provide electrical power to the LED. - View Dependent Claims (70)
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Specification