High temperature coefficient MOS bias generation circuit
First Claim
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1. A high temperature coefficient circuit comprising:
- a temperature dependent bias generation circuit serially coupled with a variable resistance device having a resistance that increases with increasing temperature, wherein an output current of the high temperature coefficient circuit is proportional to the resistance of the variable resistance device.
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Abstract
A high temperature coefficient includes a temperature dependent bias generation circuit serially coupled with a variable resistance. The resistance of the variable resistance device increases with increasing temperature such that the output current of the high temperature coefficient circuit is proportional to the resistance of the variable resistance device.
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Citations
22 Claims
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1. A high temperature coefficient circuit comprising:
a temperature dependent bias generation circuit serially coupled with a variable resistance device having a resistance that increases with increasing temperature, wherein an output current of the high temperature coefficient circuit is proportional to the resistance of the variable resistance device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An RF communication system, comprising:
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a transmit node for transmitting an RF information signal, the transmit node comprising a high temperature coefficient circuit for biasing an amplifier, wherein the high temperature coefficient circuit comprises, a temperature dependent bias generation circuit serially coupled with a variable resistance device having a resistance that increases with increasing temperature, wherein an output current of the high temperature coefficient circuit is proportional to the resistance of the variable resistance device; and
a receive node for receiving the transmitted RF information signal. - View Dependent Claims (13, 14)
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15. A high temperature coefficient circuit comprising:
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a current mirror serially coupled to a first pair of parallel transistors;
a variable resistance device serially coupled with a first transistor of the first pair of parallel transistors, wherein resistance of the variable resistance device increases with increasing temperature, and wherein an output current of the high temperature coefficient circuit is proportional to the resistance of the variable resistance device. - View Dependent Claims (12, 16, 17, 18, 19, 20, 21, 22)
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Specification