Electric component for communication device and semiconductor device for switching transmission and reception

• US 20050047038A1
• Filed: 08/19/2004
• Published: 03/03/2005
• Est. Priority Date: 08/27/2003
• Status: Active Grant

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Ogawa, Takashi, Osakabe, Shinya, Shigeno, Yasushi, Nakajima, Akishige, Tange, Eigo, Suenaga, Hidenori
• Granted Patent: US 7,269,392 B2
• Time in Patent Office: Days
• US Class Current: 361/58
• CPC Class Codes: H03F 1/0277 Selecting one or more amplifiers from a plurality of amplifiers
• CPC Class Codes: H03F 1/32 Modifications of amplifiers to reduce non-linear distortion by negative feedback H03F1/34
• CPC Class Codes: H03F 2200/111 the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
• CPC Class Codes: H03F 2200/372 Noise reduction and elimination in amplifier
• CPC Class Codes: H03F 2200/429 Two or more amplifiers or one amplifier with filters for different frequency bands are coupled in parallel at the input or output
• CPC Class Codes: H03F 3/195 in integrated circuits
• CPC Class Codes: H03F 3/72 Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal

Abstract

There are provided a transmission/reception switching circuit which is small in insertion loss and harmonic distortion and allows an increase in the output power of a power amplifier and an electronic component for communication on which the transmission/reception switching circuit is mounted. As an element composing a transmission/reception switching circuit in a wireless communication system, series-connected FETs or a multi-gate FET are used in place of a diode. Gate resistors connected between the individual gate terminals and a control terminal are designed to have resistance values which become progressively smaller from the gate to which a highest voltage is applied toward the gate to which a lowest voltage is applied.

Claims

1. An electronic component for communication, comprising:

a first power amplification circuit for amplifying an RF signal in a first frequency band to be transmitted;

a second power amplification circuit for amplifying an RF signal in a second frequency band to be transmitted;

a first terminal connected to a transmission/reception antenna;

a second terminal connected to a first reception circuit for processing a received RF signal in the first frequency band;

a third terminal connected to a second reception circuit for processing a received RF signal in the second frequency band;

a first switch circuit provided between said first terminal and said first power amplification circuit and between said first and second terminals; and

a second switch circuit provided between said first terminal and said second power amplification circuit and between said first and third terminals,

wherein a transistor constituting said first switch circuit and a transistor constituting said second switch circuit have respective characteristics different from each other such that an insertion loss of the first switch circuit and an insertion loss of the second switch circuit are balanced.

2. An electronic component for communication according to claim 1, wherein the transistor constituting said first switch circuit and the transistor constituting said second switch circuit have the different characteristics which are different in gate widths.

3. An electronic component for communication according to claim 1,

wherein said first switch circuit includes first switching means provided between said first terminal and the first power amplification circuit and second switching means provided between said first and second terminals,

wherein said second switch circuit includes third switching means provided between said first terminal and the second power amplification circuit and fourth switching means provided between said first and third terminals, each of said second and fourth switching means is constituted by a single multi-gate transistor or a plurality of transistors connected in series, respective resistor elements are connected between a plurality of gate terminals of the transistor or transistors and an control input terminal used commonly thereamong, and resistance values of the resistor elements have been set such that the resistor element connected to the gate terminal closer to said first terminal has a larger resistance value.

4. An electronic component for communication according to claim 3,

wherein each of the first and third switching means is comprised of the single multi-gate transistor or the plurality of transistors connected in series, the respective resistor elements are connected between the plurality of gate terminals of the transistor or transistors and the control input terminal used commonly thereamong, and the resistance values of the resistor elements are set such that the resistor element connected to the gate terminal closer to said first terminal has a smaller resistance value.

5. An electronic component for communication, comprising:

a first power amplification circuit for amplifying an RF signal in a first frequency band to be transmitted;

a second power amplification circuit for amplifying an RF signal in a second frequency band to be transmitted;

a first terminal connected to a transmission/reception antenna;

a second terminal connected to a first reception circuit for processing a received RF signal in the first frequency band;

a third terminal connected to a second reception circuit for processing a received RF signal in the second frequency band;

a first switch circuit provided between said first terminal and said first power amplification circuit and said second terminal; and

a second switch circuit provided between said first terminal and said second power amplification circuit and said third terminal,

wherein a frequency in said second frequency band has been adjusted to be lower than a frequency in said first frequency band, and a first signal line formed between said second power amplification circuit and the second switch circuit to propagate the RF signal to be transmitted has been designed to be longer than a second signal line formed between said first power amplification circuit and the first switch circuit to propagate the RF signal to be transmitted.

6. An electronic component for communication, comprising:

a first power amplification circuit for amplifying an RF signal in a first frequency band to be transmitted;

a second power amplification circuit for amplifying an RF signal in a second frequency band to be transmitted;

a first terminal connected to a transmission/reception antenna;

a second terminal connected to a first reception circuit for processing a received RF signal in the first frequency band;

a third terminal connected to a second reception circuit for processing a received RF signal in the second frequency band;

a first switch circuit provided between said first terminal and said first power amplification circuit and said second terminal; and

a second switch circuit provided between said first terminal and said second power amplification circuit and said third terminal,

wherein a specified dc voltage is applied via a resistor element to each of a signal input terminal of said first switch circuit to which the RF signal in said first frequency band to be transmitted is inputted, a signal input terminal of said second switch circuit to which the RF signal in said second frequency band to be transmitted is inputted, and said first terminal.

7. An electronic component for communication according to claim 6,

wherein at least said first and second switch circuits are formed over a single semiconductor chip, and said resistor element connected to each of said signal input terminal and said first terminal is connected to a specified terminal of said semiconductor chip outside the semiconductor chip.

8. A semiconductor device for switching transmission and reception, comprising:

a first terminal connected to a transmission/reception antenna;

a second terminal connected to a transmission circuit;

a third terminal connected to a reception circuit;

first switching means provided between said first and second terminals; and

second switching means provided between said first and third terminals, said semiconductor device performing switching between a signal to be transmitted and a received signal through an ON/OFF operation of said first and second switching means,

wherein said second switching means is comprised of a single multi-gate transistor or a plurality of transistors connected in series, respective resistor elements are connected between a plurality of gate terminals of the transistor or transistors and a control input terminal used commonly thereamong, and resistance values of the resistor elements are set such that the resistor element connected to the gate terminal closer to said first terminal has a larger resistance value.

9. A semiconductor device for switching transmission and reception according to claim 8,

wherein said first switching means is comprised of a single multi-gate transistor or a plurality of transistors connected in series, respective resistor elements are connected between a plurality of gate terminals of the transistor or transistors and a control input terminal used commonly thereamong, and resistance values of the resistor elements are set such that the resistor element connected to the gate terminal closer to said first terminal has a larger resistance value.

10. A semiconductor device for switching transmission and reception according to claim 8,

wherein each of said resistor elements is constituted by a refractory metal layer or a silicide layer of a refractory metal formed in a specified pattern over an insulating film outside a transistor formation region of a semiconductor substrate formed with said transistor or transistors.

11. A semiconductor device for switching transmission and reception according to claim 8,

wherein said second switching means is constituted by the multi-gate transistor and a second transistor connected between said first and third terminals in series relation to said multi-gate transistor, respective resistor elements are connected between a plurality of gate terminals of said multi-gate transistor and a control input terminal used commonly thereamong, and resistance values of the resistor elements are set such that the resistor element connected to the gate terminal closer to said first terminal has a larger resistance value.

12. A semiconductor device for switching transmission and reception according to claim 8, further comprising:

a fourth terminal connected to a second reception circuit; and

third switching means connected between said first and fourth terminals,

wherein said third switching means is comprised of a single multi-gate transistor or a plurality of transistors connected in series, respective resistor elements are connected between a plurality of gate terminals of the transistor or transistors and a control input terminal used commonly thereamong, and resistance values of the resistor elements are set such that the resistor element connected to the gate terminal closer to said first terminal has a larger resistance value.