CMOS image sensor and method for manufacturing the same
First Claim
1. A method for manufacturing a CMOS image sensor, the method comprising the steps of:
- a) forming an isolation layer on a semiconductor substrate so as to define an active region for a unit pixel;
b) forming (i) a passivation layer over a boundary between said isolation layer and the active region and (ii) at least one transistor gate structure on said semiconductor substrate; and
c) implanting impurities into a portion of the active region to form a diffusion region for a photodiode.
4 Assignments
0 Petitions
Accused Products
Abstract
A CMOS image sensor and a manufacturing method thereof are disclosed. The gates of the transistors are formed in an active region of a unit pixel, and at the same time, a passivation layer is formed on an edge portion of the active region of a photodiode to have the same laminate structure as the gates of the transistors. Impurities for a diffusion region of the photodiode are ion-implanted into the active region for the photodiode, after the laminate structure is formed. The passivation layer prevents the edge portion from being damaged by ion implantation at the boundary or interface between the photodiode diffusion region and an isolation layer, which reduces dark current and/or leakage current of the CMOS image sensor.
31 Citations
20 Claims
-
1. A method for manufacturing a CMOS image sensor, the method comprising the steps of:
-
a) forming an isolation layer on a semiconductor substrate so as to define an active region for a unit pixel;
b) forming (i) a passivation layer over a boundary between said isolation layer and the active region and (ii) at least one transistor gate structure on said semiconductor substrate; and
c) implanting impurities into a portion of the active region to form a diffusion region for a photodiode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A CMOS image sensor comprising:
-
a) a semiconductor substrate having an isolation region and an active region for a unit pixel;
b) at least one transistor formed on said semiconductor substrate in said unit pixel; and
c) a diffusion region for a photodiode, wherein said diffusion region is located a distance away from said isolation region. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
-
Specification