Semiconductor apparatus

• US 20050093137A1
• Filed: 11/02/2004
• Published: 05/05/2005
• Est. Priority Date: 11/04/2003
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toyota Jidoshokki
• Original Assignee: Kabushiki Kaisha Toyota Jidoshokki
• Inventors: Onishi, Hiroyuki, Ishikawa, Jun, Nagase, Toshiaki, Akagawa, Koichi
• Granted Patent: US 7,256,489 B2
• Time in Patent Office: Days
• US Class Current: 257/712
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]

Abstract

In a semiconductor apparatus in which a main current of a semiconductor device flows through a wiring pattern formed on an insulation circuit board, the rise in temperature of the wiring pattern is suppressed and the increase in cost of parts can be minimized. On the insulation circuit board, a copper pattern is formed. A heat spreader is soldered to the copper pattern, and the heat spreader is loaded with a semiconductor chip. An external electrode and the heat spreader are arranged to shorten the distance between the side of the external electrode and the side of the heat spreader.

Claims

1. A semiconductor apparatus, comprising:

a semiconductor device;

a metal conductor forming an external terminal through which a main current of the semiconductor device flows; and

a conductive wiring pattern, formed on an insulation board, for electrically connecting the metal conductor to the semiconductor device, wherein

said metal conductor and said semiconductor device are arranged such that a wiring length of the wiring pattern functioning as a current path between said metal conductor and said semiconductor device can be short.

3. The apparatus according to claim 1, wherein

a space between a side of said metal conductor and a side of said semiconductor device is filled with a conductive material to reduce a resistance between said metal conductor and said semiconductor device.

5. The apparatus according to claim 3, wherein

said conductive material is solder, and a resist is applied to prevent a solder layer from being formed on a top of the sides of said metal conductor and said semiconductor device.

7. The apparatus according to claim 1, wherein:

the metal conductor comprises;

a first metal conductor connected to said semiconductor device by wire bonding; and

a second metal conductor electrically connected to said semiconductor device by the wiring pattern; and

an end portion of said second metal conductor is protruded farther than an end portion of said first metal conductor toward said semiconductor device, and a distance between the end portion of said second metal conductor and said semiconductor device is shortened.

2. A semiconductor apparatus, comprising:

a semiconductor device;

a metal conductor forming an external terminal through which a main current of the semiconductor device flows;

a radiation member loaded with said semiconductor device, and

a conductive wiring pattern, formed on an insulation board, for electrically connecting said metal conductor to the radiation member, wherein

said metal conductor and said radiation member are arranged such that a wiring length of the wiring pattern functioning as a current path between said metal conductor and said radiation member can be short.

4. The apparatus according to claim 2, wherein

a space between a side of said metal conductor and said radiation member is filled with a conductive material to reduce a resistance between said metal conductor and said radiation member.

6. The apparatus according to claim 4, wherein

said conductive material is solder, and a resist is applied to prevent a solder layer from being formed on a top of the sides of said metal conductor and said radiation member.

8. The apparatus according to claim 2, wherein:

said metal conductor comprises;

a first metal conductor connected to said semiconductor device by wire bonding; and

a second metal conductor electrically connected to said radiation member by the wiring pattern; and

an end portion of said second metal conductor is protruded farther than an end portion of said first metal conductor toward said semiconductor device, and a distance between the end portion of said second metal conductor and said radiation member is shortened.