Nitride semiconductor device
0 Assignments
0 Petitions
Accused Products
Abstract
A nitride semiconductor device includes an n-type semiconductor layer, p-type semiconductor layer and an active layer of a quantum well structure that is sandwiched between said p-type and n-type nitride semiconductor layer, wherein the active layer has a first barrier layer, a second barrier layer and a third barrier layer. The first barrier layer is nearest to the p-type nitride semiconductor layer among the first, second and third barrier layers. The second barrier layer is nearest to the n-type nitride semiconductor layer among the first, second and third barrier layers. The third barrier layer is between the first and second barrier layers, and includes an upper barrier layer that contacts with a p-side surface of the well layer and a lower barrier layer that contacts with an n-side surface of said well layer. The upper and lower barrier layers having different composition or impurity concentrations.
62 Citations
177 Claims
-
1-141. -141. (canceled)
-
142. A nitride semiconductor device comprising:
-
a n-type semiconductor layer, p-type semiconductor layer and an active layer of a quantum well structure that is sandwiched between said p-type and n-type nitride semiconductor layer, wherein said active layer includes a first barrier layer, a second barrier layer and a third barrier layer;
said first barrier layer being the nearest to said p-type nitride semiconductor layer among the first, second and third barrier layers;
said second barrier layer being the nearest to said n-type nitride semiconductor layer among the first, second and third barrier layers;
said third barrier layer being between said first and second barrier layers,and wherein said third barrier layer includes at least an upper barrier layer that is in contact with a p-side surface of said well layer and a lower barrier layer that is in contact with an n-side surface of said well layer;
said upper and lower barrier layers being different in a composition or impurity concentration with each other. - View Dependent Claims (143, 144, 145, 146, 147, 148, 149, 150, 151, 152, 153)
-
-
154. A nitride semiconductor device comprising:
-
a n-type semiconductor layer, p-type semiconductor layer and an active layer of a quantum well structure that is sandwiched between said p-type and n-type nitride semiconductor layer, wherein said active layer has L (L≧
2) barrier layers so that the barrier layer arranged in a position nearest to said n-type nitride semiconductor layer is denoted as barrier layer B1 and the i-th barrier layer (i=1, 2, 3, . . . L) counted from the barrier layer B1 toward said p-type nitride semiconductor layer is denoted as barrier layer Bi,and wherein at least one of said barrier layers Bi(1≦
i≦
L) comprises at least an upper barrier layer that is in contact with a p-side surface of said well layer and a lower barrier layer that is in contact with an n-side surface of said well layer;
said upper and lower barrier layers being different in a composition or impurity concentration with each other. - View Dependent Claims (155, 156, 157, 158, 159, 160, 161, 162, 163, 164, 165)
-
-
166. A nitride semiconductor device comprising:
-
a n-type semiconductor layer, p-type semiconductor layer and an active layer of a quantum well structure that is sandwiched between said p-type and n-type nitride semiconductor layer, wherein said active layer includes a first barrier layer, a second barrier layer and a third barrier layer;
said first barrier layer being the nearest to said p-type nitride semiconductor layer among barrier layers;
said second barrier layer being the nearest to said n-type nitride semiconductor layer among barrier layers;
said third barrier layer being between said first and second barrier layers,and wherein said third barrier layer includes at least an upper barrier layer that is in contact with a p-side surface of said well layer and a lower barrier layer that is in contact with an n-side surface of said well layer;
said upper and lower barrier layers being different in a composition or impurity concentration with each other. - View Dependent Claims (167, 168, 169, 170, 171, 172, 173, 174, 175, 176, 177)
-
Specification