Semiconductor device and manufacturing method thereof

• US 20050130389A1
• Filed: 12/09/2004
• Published: 06/16/2005
• Est. Priority Date: 12/12/2003
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Akiba, Mai, Koyama, Jun, Yamazaki, Shunpei
• Granted Patent: US 7,768,405 B2
• Time in Patent Office: Days
• US Class Current: 438/455
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: Y10T 29/49117 Conductor or circuit manufacturing

Abstract

A semiconductor device typified by a wireless tag, which has improved mechanical strength, can be formed by a more simple process at a low cost and prevent radio waves from being shielded, and a manufacturing method of the semiconductor device. According to the invention, a wireless tag includes a thin film integrated circuit formed of an isolated TFT having a thin film semiconductor film. The wireless tag may be attached directly to an object, or attached to a flexible support such as plastic and paper before being attached to an object. The wireless tag of the invention may include an antenna as well as the thin film integrated circuit. The antenna allows to communicate signals between a reader/writer and the thin film integrated circuit, and to supply a power source voltage from the reader/writer to the thin film integrated circuit.

Claims

1. A semiconductor device comprising a thin film integrated circuit using a thin film transistor, an antenna, and a flexible substrate,

wherein the antenna is formed over the substrate;

and

wherein the thin film integrated circuit is attached to the substrate so as to be electrically connected to the antenna.

6. The semiconductor device according to any one of claims 1 to 5,

wherein the antenna is formed by a droplet ejection method and formed of Ag, Au or Cu.

2. A semiconductor device comprising a thin film integrated circuit using a thin film transistor, and an antenna,

wherein the antenna is formed over a first substrate, then peeled off from the first substrate by removing the first substrate;

wherein the thin film integrated circuit is formed over a second substrate, then peeled off from the second substrate by removing the second substrate; and

wherein the thin film integrated circuit and the antenna are attached to each other so as to be electrically connected and have a stacked structure.

3. A semiconductor device comprising a thin film integrated circuit using a thin film transistor, an antenna, and a flexible substrate,

wherein the antenna is formed over the substrate;

wherein the thin film integrated circuit is attached to the substrate so as to be electrically connected to the antenna; and

wherein the substrate is folded so that the thin film integrated circuit is interposed therebetween.

4. A semiconductor device comprising a thin film integrated circuit using a thin film transistor, an antenna, and a flexible and bag shape substrate,

wherein the antenna is formed inside the bag shape substrate;

and

wherein the thin film integrated circuit is attached inside the bag shape substrate so as to be electrically connected to the antenna.

5. A semiconductor device comprising a thin film integrated circuit using a thin film transistor, an antenna, a first flexible substrate, and a second flexible substrate,

wherein the antenna is formed over the first substrate;

wherein the thin film integrated circuit is attached to the first substrate so as to be electrically connected to the antenna; and

wherein the second substrate is stacked over the first substrate so that the antenna and the thin film integrated circuit are interposed therebetween.

7. A semiconductor device comprising a thin film integrated circuit using a thin film transistor, a first antenna, a second antenna, a first flexible substrate, and a second flexible substrate,

wherein the first antenna is formed over the first substrate;

wherein the second antenna is formed over the second substrate;

wherein the thin film integrated circuit is attached to the first substrate so as to be electrically connected to the first antenna; and

wherein the second substrate is stacked over the first substrate so that the first antenna is electrically connected to the second antenna and the first antenna, the second antenna and the thin film integrated circuit are interposed between the first substrate and the second substrate.

8. The semiconductor device according to claim 7,

wherein the first antenna or the second antenna is formed by a droplet ejection method and formed of Ag, Au or Cu.

9. A semiconductor device comprising a thin film integrated circuit using a thin film transistor,

wherein the thin film integrated circuit comprises a connecting terminal;

and

wherein the thin film integrated circuit comprises a rectification circuit for generating a DC power source voltage from an AC signal inputted to the connecting terminal by an antenna, a demodulation circuit for demodulating the AC signal to generate a first signal, a microprocessor for performing a processing in accordance with the first signal to generate a second signal, a modulation circuit for modulating the second signal, and a switch for modulating a load applied to the antenna in accordance with the modulated second signal.

10. A semiconductor device comprising a thin film integrated circuit using a thin film transistor,

wherein the thin film integrated circuit comprises a connecting terminal;

wherein the thin film integrated circuit comprises a rectification circuit for generating a DC power source voltage from an AC signal inputted to the connecting terminal by an antenna, a demodulation circuit for demodulating the AC signal to generate a first signal, a microprocessor for performing a processing in accordance with the first signal to generate a second signal, a modulation circuit for modulating the second signal, and a switch for modulating a load applied to the antenna in accordance with the modulated second signal; and

wherein the thin film integrated circuit is formed over a substrate, then peeled off from the substrate by removing the substrate.

11. A semiconductor device comprising a thin film integrated circuit using a thin film transistor, an antenna, and a flexible substrate,

wherein a gate electrode of the thin film integrated circuit or a wiring connected to the thin film transistor is formed of the same conductive film as the antenna;

and

wherein the antenna and the thin film integrated circuit are attached to the substrate.

12. A semiconductor device comprising a thin film integrated circuit using a thin film transistor, and an antenna,

wherein a gate electrode of the thin film integrated circuit or a wiring connected to the thin film transistor and the antenna are formed of the same conductive film.

13. A semiconductor device comprising a thin film integrated circuit using a thin film transistor, and an antenna,

wherein the thin film integrated circuit and the antenna are formed over a substrate, then peeled off from the substrate by removing the substrate.

14. A manufacturing method of a semiconductor device, comprising:

forming a thin film integrated circuit over a first substrate;

forming an antenna over a second flexible substrate by a printing method, a droplet ejection method, a photolithography method, or a vapor deposition method using a metal mask, and

attaching the first substrate and the second substrate so that the thin film integrated circuit is electrically connected to the antenna, then peeling off the first substrate from the thin film integrated circuit.

15. A manufacturing method of a semiconductor device, comprising:

forming a thin film integrated circuit and an antenna on a first substrate; and

attaching the first substrate and a second flexible substrate so that the thin film integrated circuit and the antenna are interposed therebetween, then peeling off the first substrate from the thin film integrated circuit.