Semiconductor memory cell and semiconductor memory device
First Claim
1. A method of manufacturing a semiconductor memory cell comprising:
- forming an insulating film over a substrate having an insulating surface in a manner that makes a linear concave portion;
forming an amorphous semiconductor film in a region that includes the linear concave portion;
melting and crystallizing the amorphous semiconductor film to form a crystalline semiconductor film;
forming a first gate insulating film that is in contact with only a top surface of the crystalline semiconductor film formed in the linear concave portion;
forming an electric charge accumulating layer on the first gate insulating film;
forming a second gate insulating film on the electric charge accumulating layer; and
forming a control gate electrode on the second gate insulating film.
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Accused Products
Abstract
An insulating film with a linear concave portion is formed and a semiconductor film is formed thereon by deposition. The semiconductor film is irradiated with laser light to melt the semiconductor film and the melted semiconductor is poured into the concave portion, where it is crystallized. This makes distortion or stress accompanying crystallization concentrate on other regions than the concave portion. A surface of this crystalline semiconductor film is etched away, thereby forming in the concave portion a crystalline semiconductor film which is covered with side walls of the concave portion from the sides and which has no other grain boundaries than twin crystal. TFTs and memory TFTs having this crystalline semiconductor film as their channel regions are highly reliable, have high field effect mobility, and are less fluctuated in characteristic. Accordingly, a highly reliable semiconductor memory device which can operate at high speed is obtained.
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Citations
14 Claims
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1. A method of manufacturing a semiconductor memory cell comprising:
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forming an insulating film over a substrate having an insulating surface in a manner that makes a linear concave portion;
forming an amorphous semiconductor film in a region that includes the linear concave portion;
melting and crystallizing the amorphous semiconductor film to form a crystalline semiconductor film;
forming a first gate insulating film that is in contact with only a top surface of the crystalline semiconductor film formed in the linear concave portion;
forming an electric charge accumulating layer on the first gate insulating film;
forming a second gate insulating film on the electric charge accumulating layer; and
forming a control gate electrode on the second gate insulating film. - View Dependent Claims (2)
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3. A method of manufacturing a semiconductor memory cell, the method comprising:
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forming an insulating film over a substrate having an insulating surface in a manner that makes a linear concave portion;
forming an amorphous semiconductor film in a region that includes the linear concave portion;
melting and crystallizing the amorphous semiconductor film to form a crystalline semiconductor film by irradiating the amorphous semiconductor film with a laser light;
forming a first gate insulating film that is in contact with only a top surface of the crystalline semiconductor film formed in the linear concave portion;
forming an electric charge accumulating layer on the first gate insulating film;
forming a second gate insulating film on the electric charge accumulating layer; and
forming a control gate electrode on the second gate insulating film. - View Dependent Claims (4, 5)
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6. A method of manufacturing a semiconductor memory cell comprising:
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forming an insulating film over a substrate having an insulating surface in a manner that makes a linear concave portion;
forming an amorphous semiconductor film in a region that includes the linear concave portion;
melting and crystallizing the amorphous semiconductor film to form a crystalline semiconductor film;
etching a surface of the crystalline semiconductor film so that side surfaces of the crystalline semiconductor film are covered with side walls of the linear concave portion;
forming a first gate insulating film that is in contact with only a top suface of the crystalline semiconductor film formed in the linear concave portion;
forming an electric charge accumulating layer on the first gate insulating film;
forming a second gate insulating film on the electric charge accumulating layer; and
forming a control gate electrode on the second gate insulating film. - View Dependent Claims (7)
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8. A method of manufacturing a semiconductor memory cell, the method comprising:
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forming an insulating film over a substrate having an insulating surface in a manner that makes a linear concave portion;
forming an amorphous semiconductor film in a region that includes the linear concave portion;
melting and crystallizing the amorphous semiconductor film to form a crystalline semiconductor film by irradiating the amorphous semiconductor film with a laser light;
etching a surface of the crystalline semiconductor film so that side surfaces of the crystalline semiconductor film are covered with side walls of the linear concave portion;
forming a first gate insulating film that is in contact with only a top surface of the crystalline semiconductor film formed in the linear concave portion;
forming an electric charge accumulating layer on the first gate insulating film;
forming a second gate insulating film on the electric charge accumulating layer; and
forming a control gate electrode on the second gate insulating film. - View Dependent Claims (9, 10)
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11. A method of manufacturing a semiconductor memory cell comprising:
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forming an insulating film over a substrate having an insulating surface in a manner that makes a linear concave portion;
forming an amorphous semiconductor film in a region that includes the linear concave portion;
crystallizing the amorphous semiconductor film to form a crystalline semiconductor film;
forming a first gate insulating film that is in contact with only a top surface of the crystalline semiconductor film formed in the linear concave portion;
forming an electric charge accumulating layer on the first gate insulating film;
forming a second gate insulating film on the electric charge accumulating layer; and
forming a control gate electrode on the second gate insulating film. - View Dependent Claims (12)
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13. A method of manufacturing a semiconductor memory cell comprising:
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forming an insulating film over a substrate having an insulating surface in a manner that makes a linear concave portion;
forming an amorphous semiconductor film in a region that includes the linear concave portion;
crystallizing the amorphous semiconductor film to form a crystalline semiconductor film;
etching a surface of the crystalline semiconductor film so that side surfaces of the crystalline semiconductor film are covered with side walls of the linear concave portion;
forming a first gate insulating film that is in contact with only a top suface of the crystalline semiconductor film formed in the linear concave portion;
forming an electric charge accumulating layer on the first gate insulating film;
forming a second gate insulating film on the electric charge accumulating layer; and
forming a control gate electrode on the second gate insulating film. - View Dependent Claims (14)
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Specification