Plasma chemical vapor deposition system and method for coating both sides of substrate
First Claim
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1. A plasma chemical vapor deposition system comprising:
- a chamber provided with gas injection holes;
a gas exhaust unit mounted on the chamber;
a substrate holder disposed on a central area of the chamber to support a substrate in a state where both sides of the substrate are exposed; and
first and second coils generating induced magnetic fields, the first and second coils being disposed around upper and lower outer circumferences of the chamber, respectively.
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Abstract
A plasma chemical vapor deposition system includes a chamber provided with gas injection holes, a gas exhaust unit mounted on the chamber, a substrate holder disposed on a central area of the chamber to support a substrate in a state where both sides of the substrate are exposed, and first and second coils generating induced magnetic fields. The first and second coils are disposed around upper and lower outer circumferences of the chamber, respectively.
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Citations
10 Claims
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1. A plasma chemical vapor deposition system comprising:
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a chamber provided with gas injection holes;
a gas exhaust unit mounted on the chamber;
a substrate holder disposed on a central area of the chamber to support a substrate in a state where both sides of the substrate are exposed; and
first and second coils generating induced magnetic fields, the first and second coils being disposed around upper and lower outer circumferences of the chamber, respectively. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A plasma chemical vapor deposition method comprising:
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disposing a substrate on a substrate holder in a central area of a chamber provided with a gas injection hole and a gas exhaust hole; and
generating uniform induced magnetic fields on both sides of the substrate by applying high frequency to first and second coils between which the substrate is disposed, thereby forming a uniform thin film on the both sides of the substrate.
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Specification