Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
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Accused Products
Abstract
A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle a in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate.
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Citations
48 Claims
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1-12. -12. (canceled)
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13. A method of manufacturing a metal wiring comprising:
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forming at least one layer of conductive film on an insulating surface;
forming a resist pattern on the conductive film; and
etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle α
in accordance with a bias power density. - View Dependent Claims (14)
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15. A method of manufacturing a metal wiring comprising:
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forming at least one layer of conductive film on an insulating surface;
forming a resist pattern on the conductive film; and
etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle a in accordance with an ICP power density. - View Dependent Claims (16)
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17. A method of manufacturing a metal wiring comprising:
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forming at least one layer of conductive film on an insulating surface;
forming a resist pattern on the conductive film; and
etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle a in accordance with a temperature of a lower electrode. - View Dependent Claims (18, 19)
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20. A method of manufacturing a metal wiring comprising:
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forming at least one layer of conductive film on an insulating surface;
forming a resist pattern on the conductive film; and
etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle a in accordance with a pressure. - View Dependent Claims (21, 22)
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23. A method of manufacturing a metal wiring comprising:
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forming at least one layer of conductive film on an insulating surface;
forming a resist pattern on the conductive film; and
etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle a in accordance with a flow rate of a reaction gas. - View Dependent Claims (24, 25)
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26. A method of manufacturing a metal wiring comprising:
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forming at least one layer of conductive film on an insulating surface;
forming a resist pattern on the conductive film; and
etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle a in accordance with a ratio of oxygen in a reaction gas. - View Dependent Claims (27, 28)
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29. A method of manufacturing a metal wiring comprising:
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forming at least one layer of conductive film is formed on an insulating surface;
forming a resist pattern on the conductive film; and
etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle α
in accordance with a ratio of chlorine in a reaction gas. - View Dependent Claims (30)
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31. A method of manufacturing a metal wiring substrate comprising an insulating substrate and a metal wring, said method comprising:
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forming at least one layer of conductive film on an insulating surface;
forming a resist pattern on the conductive film; and
etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle a in accordance with a bias power density. - View Dependent Claims (32)
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33. A method of manufacturing a metal wiring substrate comprising an insulating substrate and a metal wring, said method comprising:
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forming at least one layer of conductive film on an insulating surface;
forming a resist pattern on the conductive film; and
etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle a in accordance with an ICP power density. - View Dependent Claims (34)
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35. A method of manufacturing a metal wiring substrate comprising an insulating substrate and a metal wring, said method comprising:
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forming at least one layer of conductive film on an insulating surface;
forming a resist pattern on the conductive film; and
etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle in accordance with a temperature of a lower electrode. - View Dependent Claims (36, 37)
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38. A method of manufacturing a metal wiring substrate comprising an insulating substrate and a metal wring, said method comprising:
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forming at least one layer of conductive film on an insulating surface;
forming a resist pattern on the conductive film; and
etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle a in accordance with a pressure. - View Dependent Claims (39, 40)
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41. A method of manufacturing a metal wiring substrate comprising an insulating substrate and a metal wring, said method comprising:
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forming at least one layer of conductive film on an insulating surface;
forming a resist pattern on the conductive film; and
etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle a in accordance with a flow rate of a reaction gas. - View Dependent Claims (42, 43)
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44. A method of manufacturing a metal wiring substrate comprising an insulating substrate and a metal wring, said method comprising:
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forming at least one layer of conductive film on an insulating surface;
forming a resist pattern on the conductive film; and
etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle a in accordance with a ratio of oxygen in a reaction gas. - View Dependent Claims (45, 46)
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47. A method of manufacturing a metal wiring substrate comprising an insulating substrate and a metal wring, said method comprising:
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forming at least one layer of conductive film on an insulating surface;
forming a resist pattern on the conductive film; and
etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle a in accordance with a ratio of chlorine in a reaction gas. - View Dependent Claims (48)
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Specification