Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same

• US 20050230838A1
• Filed: 04/14/2005
• Published: 10/20/2005
• Est. Priority Date: 07/27/2001
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Suzawa, Hideomi, Ono, Koji
• Granted Patent: US 7,482,274 B2
• Time in Patent Office: Days
• US Class Current: 257/764
• CPC Class Codes: C23F 4/00 Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
• CPC Class Codes: H01B 1/02 mainly consisting of metals or alloys
• CPC Class Codes: H01B 13/0006 for reducing the size of conductors or cables
• CPC Class Codes: H01B 13/0036 Details
• CPC Class Codes: H01B 5/14 comprising conductive layers or films on insulating-supports
• CPC Class Codes: H01L 21/32136 using plasmas
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/42376 characterised by the length or the sectional shape
• CPC Class Codes: H01L 29/456 on silicon
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/495 the conductor material next to the insulator being a simple metal, e.g. W, Mo H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle a in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate.

Claims

1-12. -12. (canceled)

13. A method of manufacturing a metal wiring comprising:

forming at least one layer of conductive film on an insulating surface;

forming a resist pattern on the conductive film; and

etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle α

in accordance with a bias power density.

14. A method according to claim 13, wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, and a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.

15. A method of manufacturing a metal wiring comprising:

forming at least one layer of conductive film on an insulating surface;

forming a resist pattern on the conductive film; and

etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle a in accordance with an ICP power density.

16. A method according to claim 15, wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, and a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.

17. A method of manufacturing a metal wiring comprising:

forming at least one layer of conductive film on an insulating surface;

forming a resist pattern on the conductive film; and

etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle a in accordance with a temperature of a lower electrode.

18. A method according to claim 17, wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, and a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.

19. A method according to claim 17, wherein the temperature of the lower electrode is set to 85 to 120°

C.

20. A method of manufacturing a metal wiring comprising:

forming at least one layer of conductive film on an insulating surface;

forming a resist pattern on the conductive film; and

etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle a in accordance with a pressure.

21. A method according to claim 20, wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, and a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.

22. A method according to claim 20, wherein the pressure is set to 2 to 13 Pa.

23. A method of manufacturing a metal wiring comprising:

forming at least one layer of conductive film on an insulating surface;

forming a resist pattern on the conductive film; and

etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle a in accordance with a flow rate of a reaction gas.

24. A method according to claim 23, wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, and a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.

25. A method according to claim 23, wherein a total flow rate of the reaction gas is set to 2×

10³ to 11×

10³ sccm/m³.

26. A method of manufacturing a metal wiring comprising:

forming at least one layer of conductive film on an insulating surface;

forming a resist pattern on the conductive film; and

etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle a in accordance with a ratio of oxygen in a reaction gas.

27. A method according to claim 26, wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, and a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.

28. A method according to claim 26, wherein the ratio of oxygen in the reaction gas is set to 17 to 50%.

29. A method of manufacturing a metal wiring comprising:

forming at least one layer of conductive film is formed on an insulating surface;

forming a resist pattern on the conductive film; and

etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle α

in accordance with a ratio of chlorine in a reaction gas.

30. A method according to claim 29, wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, and a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.

31. A method of manufacturing a metal wiring substrate comprising an insulating substrate and a metal wring, said method comprising:

forming at least one layer of conductive film on an insulating surface;

forming a resist pattern on the conductive film; and

etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle a in accordance with a bias power density.

32. A method according to claim 31, wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, or a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.

33. A method of manufacturing a metal wiring substrate comprising an insulating substrate and a metal wring, said method comprising:

forming at least one layer of conductive film on an insulating surface;

forming a resist pattern on the conductive film; and

etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle a in accordance with an ICP power density.

34. A method according to claim 33, wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, or a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.

35. A method of manufacturing a metal wiring substrate comprising an insulating substrate and a metal wring, said method comprising:

forming at least one layer of conductive film on an insulating surface;

forming a resist pattern on the conductive film; and

etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle in accordance with a temperature of a lower electrode.

36. A method according to claim 35, wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, or a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.

37. A method according to claim 35, wherein the temperature of the lower electrode is set to 85 to 120°

C.

38. A method of manufacturing a metal wiring substrate comprising an insulating substrate and a metal wring, said method comprising:

forming at least one layer of conductive film on an insulating surface;

forming a resist pattern on the conductive film; and

etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle a in accordance with a pressure.

39. A method according to claim 38, wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, or a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.

40. A method according to claim 38, wherein the pressure is set to 2 to 13 Pa.

41. A method of manufacturing a metal wiring substrate comprising an insulating substrate and a metal wring, said method comprising:

forming at least one layer of conductive film on an insulating surface;

forming a resist pattern on the conductive film; and

etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle a in accordance with a flow rate of a reaction gas.

42. A method according to claim 41, wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, or a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.

43. A method according to claim 41, wherein a total flow rate of the reaction gas is set to 2×

10³ to 11×

10³ sccm/m³.

44. A method of manufacturing a metal wiring substrate comprising an insulating substrate and a metal wring, said method comprising:

forming at least one layer of conductive film on an insulating surface;

forming a resist pattern on the conductive film; and

etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle a in accordance with a ratio of oxygen in a reaction gas.

45. A method according to claim 44, wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, or a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.

46. A method according to claim 44, wherein a ratio of oxygen in the reaction gas is set to 17 to 50%.

47. A method of manufacturing a metal wiring substrate comprising an insulating substrate and a metal wring, said method comprising:

forming at least one layer of conductive film on an insulating surface;

forming a resist pattern on the conductive film; and

etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle a in accordance with a ratio of chlorine in a reaction gas.

48. A method according to claim 47, wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, or a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.