Controlling electromechanical behavior of structures within a microelectromechanical systems device
First Claim
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1. A MEMS device having a substrate comprising:
- an electrode layer formed over the substrate;
a dielectric layer formed over the electrode layer;
a first etch barrier layer formed over the dielectric layer;
a cavity located above the first etch barrier; and
a moving layer located above the cavity.
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Abstract
In one embodiment, the invention provides a method for fabricating a microelectromechanical systems device. The method comprises fabricating a first layer comprising a film having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and modifying the characteristic electromechanical response of the first layer by at least reducing charge build up thereon during activation of the microelectromechanical systems device.
132 Citations
51 Claims
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1. A MEMS device having a substrate comprising:
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an electrode layer formed over the substrate;
a dielectric layer formed over the electrode layer;
a first etch barrier layer formed over the dielectric layer;
a cavity located above the first etch barrier; and
a moving layer located above the cavity. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method of manufacturing a MEMS device, comprising:
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depositing an electrode layer on a substrate;
depositing a dielectric layer over the electrode layer; and
depositing an etch stop layer over the dielectric layer. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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36. A method of manufacturing a MEMS device, comprising:
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depositing an electrode layer on a substrate;
depositing a charge-trapping layer over the electrode layer; and
depositing a first etch barrier layer over the dielectric layer. - View Dependent Claims (37, 38, 39, 40, 41, 42, 43)
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44. A MEMS device, comprising:
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a substrate;
an electrode layer formed over the substrate;
a layer of silicon nitride formed over the electrode layer; and
a layer of aluminum oxide formed over the layer of silicon nitride. - View Dependent Claims (45, 46, 47, 48, 49, 50, 51)
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Specification