Semiconductor chip having gettering layer, and method for manufacturing the same
First Claim
1. A semiconductor chip wherein an element layer is formed on the front face, and the back face is joined to an underlying member, wherein a gettering layer is formed on said back face.
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Accused Products
Abstract
In a semiconductor chip A wherein an element layer 2 having transistors and the like is formed on the front face, and the back face is joined to an underlying member, such as a package substrate, the thickness T is made 100 μm or less, and thereafter, a gettering layer 3 is formed on the back face of the semiconductor chip A. The gettering layer 3 is formed, for example, by polishing the back face of said semiconductor chip A using a polishing machine. Thereby, the yield of devices can be improved in the step for assembling the package.
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Citations
14 Claims
- 1. A semiconductor chip wherein an element layer is formed on the front face, and the back face is joined to an underlying member, wherein a gettering layer is formed on said back face.
- 7. A semiconductor package fabricated by laminating a plurality of semiconductor chips on a substrate, wherein said semiconductor chips are laminated so that the thickness of said semiconductor chip is relatively thicker than the thickness of a semiconductor chip laminated immediately above said semiconductor chip.
- 9. A method for manufacturing a semiconductor chip, wherein a gettering layer for trapping heavy metals is formed on the back face after cutting out of a wafer by dicing.
Specification