Semiconductor device and driving method thereof

• US 20060192019A1
• Filed: 02/21/2006
• Published: 08/31/2006
• Est. Priority Date: 02/28/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Shionoiri, Yutaka, Kato, Kiyoshi
• Granted Patent: US 7,751,498 B2
• Time in Patent Office: Days
• US Class Current: 235/492
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components

Abstract

The invention provides a semiconductor device with high yield by reducing an effect of variations in characteristics of a semiconductor element. Further, by reducing an effect of variations in characteristics of a semiconductor element to improve productivity, an inexpensive semiconductor device can be provided. Further, an inexpensive semiconductor device can be provided by forming a semiconductor device in a large amount over a large substrate such as a glass substrate and a flexible substrate. A semiconductor device of the invention includes a demodulation signal generating circuit and an antenna or a wire for connecting the antenna. The demodulation signal generating circuit includes a demodulation circuit and a correction circuit. The correction circuit corrects a first demodulation signal generated from the demodulation circuit and generates a second demodulation signal.

Claims

1. A semiconductor device comprising:

a resonant circuit;

a demodulation circuit for demodulating an alternating signal generated at the resonant circuit and generating a first demodulation signal; and

a correction circuit for correcting the first demodulation signal and generating a second demodulation signal.

2. The semiconductor device according to claim 1, wherein the resonant circuit, the demodulation circuit, and the correction circuit are formed over a same substrate which is a glass substrate or a flexible substrate.

3. The semiconductor device according to claim 1,

wherein the demodulation circuit and the correction circuit are formed over a first substrate,

wherein the resonant circuit is formed over a second substrate, and

wherein each of the first substrate and the second substrate is a glass substrate or a flexible substrate.

4. The semiconductor device according to claim 1, wherein the demodulation circuit comprises a plurality of transistors.

5. The semiconductor device according to claim 1, wherein the correction circuit comprises a plurality of transistors.

6. The semiconductor device according to claim 1, further comprising:

at least one of a power source circuit, a clock generating circuit, a memory, a memory control circuit, and a modulation circuit.

7. The semiconductor device according to claim 1,

wherein the correction circuit includes an inverter comprising an N-channel transistor and a P-channel transistor, and

wherein the inverter has a voltage level of a changing point of input/output characteristics within a range of 25 to 45% of a power source voltage.

8. The semiconductor device according to claim 7, wherein a channel width of the N-channel transistor is wider than a channel width of the P-channel transistor.

9. The semiconductor device according to claim 8, wherein the channel width of the N-channel transistor is 1 to 10 times as wide as the channel width of the P-channel transistor.

10. The semiconductor device according to claim 7, wherein a channel length of the P-channel transistor is longer than a channel length of the N-channel transistor.

11. The semiconductor device according to claim 7, wherein an absolute value of a threshold voltage of the P-channel transistor is larger than an absolute value of a threshold voltage of the N-channel transistor.

12. The semiconductor device according to claim 1,

wherein the correction circuit includes an inverter comprising an N-channel transistor and a P-channel transistor, and

wherein the inverter has a voltage level of a changing point of input/output characteristics within a range of 55 to 75% of a power source voltage.

13. The semiconductor device according to claim 12, wherein a channel width of the P-channel transistor is wider than a channel width of the N-channel transistor.

14. The semiconductor device according to claim 13, wherein the channel width of the P-channel transistor is 4 to 20 times as wide as the channel width of the N-channel transistor.

15. The semiconductor device according to claim 12, wherein a channel length of the N-channel transistor is longer than a channel length of the P-channel transistor.

16. The semiconductor device according to claim 12, wherein an absolute value of a threshold voltage of the N-channel transistor is larger than an absolute value of a threshold voltage of the P-channel transistor.

17. The semiconductor device according to claim 1, wherein the resonant circuit includes an antenna.

18. The semiconductor device according to claim 1, wherein the correction circuit includes a level shifter.

19. The semiconductor device according to claim 1, wherein the correction circuit includes a differential amplifier.

20. The semiconductor device according to claim 1, wherein the second demodulation signal is equal to amplitude of a power source voltage.

21. The semiconductor device according to claim 1, wherein the semiconductor device is incorporated into bills, coins, securities, certificates, bearer bonds, packaging containers, books, memory media, personal belongings, vehicles, groceries, garments, health products, daily commodities, medicals, or electronic devices.

22. A semiconductor device comprising:

an antenna; and

a demodulation circuit and a correction circuit,

wherein the demodulation circuit demodulates an alternating signal generated by using the antenna and generates a first demodulation signal; and

wherein the correction circuit corrects the first demodulation signal and generates a second demodulation signal.

23. The semiconductor device according to claim 22, wherein the antenna, the demodulation circuit, and the correction circuit are formed over a same substrate which is a glass substrate or a flexible substrate.

24. The semiconductor device according to claim 22,

wherein the demodulation circuit and the correction circuit are formed over a first substrate,

wherein the antenna is formed over a second substrate, and

wherein each of the first substrate and the second substrate is a glass substrate or a flexible substrate.

25. The semiconductor device according to claim 22, wherein the demodulation circuit comprises a plurality of transistors.

26. The semiconductor device according to claim 22, wherein the correction circuit comprises a plurality of transistors.

27. The semiconductor device according to claim 22, further comprising:

at least one of a power source circuit, a clock generating circuit, a memory, a memory control circuit, and a modulation circuit.

28. The semiconductor device according to claim 22,

wherein the correction circuit includes an inverter comprising an N-channel transistor and a P-channel transistor, and

wherein the inverter has a voltage level of a changing point of input/output characteristics within a range of 25 to 45% of a power source voltage.

29. The semiconductor device according to claim 28, wherein a channel width of the N-channel transistor is wider than a channel width of the P-channel transistor.

30. The semiconductor device according to claim 29, wherein the channel width of the N-channel transistor is 1 to 10 times as wide as the channel width of the P-channel transistor.

31. The semiconductor device according to claim 28, wherein a channel length of the P-channel transistor is longer than a channel length of the N-channel transistor.

32. The semiconductor device according to claim 28, wherein an absolute value of a threshold voltage of the P-channel transistor is larger than an absolute value of a threshold voltage of the N-channel transistor.

33. The semiconductor device according to claim 22,

wherein the correction circuit includes an inverter comprising an N-channel transistor and a P-channel transistor, and

wherein the inverter has a voltage level of a changing point of input/output characteristics within a range of 55 to 75% of a power source voltage.

34. The semiconductor device according to claim 33, wherein a channel width of the P-channel transistor is wider than a channel width of the N-channel transistor.

35. The semiconductor device according to claim 34, wherein the channel width of the P-channel transistor is 4 to 20 times as wide as the channel width of the N-channel transistor.

36. The semiconductor device according to claim 33, wherein a channel length of the N-channel transistor is longer than a channel length of the P-channel transistor.

37. The semiconductor device according to claim 33, wherein an absolute value of a threshold voltage of the N-channel transistor is larger than an absolute value of a threshold voltage of the P-channel transistor.

38. The semiconductor device according to claim 22, wherein the correction circuit includes a level shifter.

39. The semiconductor device according to claim 22, wherein the correction circuit includes a differential amplifier.

40. The semiconductor device according to claim 22, wherein the second demodulation signal is equal to amplitude of a power source voltage.

41. The semiconductor device according to claim 22, wherein the semiconductor device is incorporated into bills, coins, securities, certificates, bearer bonds, packaging containers, books, memory media, personal belongings, vehicles, groceries, garments, health products, daily commodities, medicals, or electronic devices.

42. A driving method of a semiconductor device comprising:

inputting a signal generated at a resonant circuit to a demodulation circuit comprising an analog circuit;

inputting a demodulation signal generated from the demodulation circuit to a correction circuit; and

correcting the demodulation signal in the correction circuit.

43. The driving method of a semiconductor device according to claim 42, wherein the correction circuit comprises a level shifter, a differential amplifier, or an inverter.

44. The driving method of a semiconductor device according to claim 42, wherein the demodulation signal is equal to amplitude of a power source voltage.