Nitride-based semiconductor light emitting device and manufacturing method thereof
First Claim
Patent Images
1. A nitride-based semiconductor light-emitting device comprising:
- a reflective layer formed on a support substrate;
a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer;
wherein the reflective layer contacts the p-type nitride-based semiconductor layer;
a light extracting surface located above said n-type nitride-based semiconductor layer has irregularities;
wherein the reflective layer is in ohmic contact with the p-type nitride-based semiconductor layer, and the reflective layer is formed of;
a p-type-use electrode comprising Pd or Ag, or a p-type-use electrode formed of a stack of Pd and Au, or a p-type-use electrode formed of a stack of Ag and Au, or a p-type use electrode formed of a stack of Pd, Ag and Au; and
a nitride-based semiconductor layer represented by InaGa1-aN (0<
a≦
1) is formed on said n-type nitride-based semiconductor layer and an upper surface of said nitride-based semiconductor layer represented by InaGa1-aN (0<
a≦
1) is said light extracting surface.
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Abstract
The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.
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Citations
12 Claims
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1. A nitride-based semiconductor light-emitting device comprising:
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a reflective layer formed on a support substrate;
a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer;
wherein the reflective layer contacts the p-type nitride-based semiconductor layer;
a light extracting surface located above said n-type nitride-based semiconductor layer has irregularities;
wherein the reflective layer is in ohmic contact with the p-type nitride-based semiconductor layer, and the reflective layer is formed of;
a p-type-use electrode comprising Pd or Ag, or a p-type-use electrode formed of a stack of Pd and Au, or a p-type-use electrode formed of a stack of Ag and Au, or a p-type use electrode formed of a stack of Pd, Ag and Au; and
a nitride-based semiconductor layer represented by InaGa1-aN (0<
a≦
1) is formed on said n-type nitride-based semiconductor layer and an upper surface of said nitride-based semiconductor layer represented by InaGa1-aN (0<
a≦
1) is said light extracting surface. - View Dependent Claims (2, 9, 10, 11, 12)
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3. A nitride-based semiconductor light-emitting device comprising:
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a reflective layer formed on a support substrate;
a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer;
wherein the reflective layer contacts the p-type nitride-based semiconductor layer;
a light extracting surface located above said n-type nitride-based semiconductor layer has irregularities;
wherein the reflective layer is in ohmic contact with the p-type nitride-based semiconductor layer, and the reflective layer is formed of;
a p-type-use electrode comprising Pd or Ag, or a p-type-use electrode formed of a stack of Pd and Au, or a p-type-use electrode formed of a stack of Ag and Au, or a p-type use electrode formed of a stack of Pd, Ag and Au; and
a silicon-doped nitride-based semiconductor layer represented by InaGa1-aN (0<
a≦
1) is formed on said n-type nitride-based semiconductor layer, an upper surface of the silicon-doped nitride-based semiconductor layer is said light extracting surface, and a concentration of silicon contained in the silicon-doped nitride-based semiconductor layer is in the range of 5×
1020˜
5×
1021 cm−
3.
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4. A nitride-based semiconductor light-emitting device comprising:
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a reflective layer formed on a support substrate, said support substrate formed by one of nickel provided by nickel plating, a metal provided by metal plating, Au, an alloy of Au and Sn, and an electrically-conductive semiconductor;
a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer;
wherein a light extracting surface located above said n-type nitride-based semiconductor layer has irregularities;
the reflective layer is in ohmic contact with the p-type nitride-based semiconductor layer, and the reflective layer is formed of;
a p-type-use electrode comprising Pd or Ag, or a p-type-use electrode formed of a stack of Pd and Au, or a p-type-use electrode formed of a stack of Ag and Au, or a p-type use electrode formed of a stack of Pd, Ag and Au; and
a nitride-based semiconductor layer represented by InaGa1-aN (0<
a≦
1) is formed on said n-type nitride-based semiconductor layer and an upper surface of said nitride-based semiconductor layer represented by InaGa1-aN (0<
a≦
1) is said light extracting surface.
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5. A nitride-based semiconductor light-emitting device comprising:
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a reflective layer formed on a support substrate, said support substrate formed by one of nickel provided by nickel plating, a metal provided by metal plating, Au, an alloy of Au and Sn, and an electrically-conductive semiconductor;
a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer;
wherein a light extracting surface located above said n-type nitride-based semiconductor layer has irregularities;
the reflective layer is in ohmic contact with the p-type nitride-based semiconductor layer, and the reflective layer is formed of;
a p-type-use electrode comprising Pd or Ag, or a p-type-use electrode formed of a stack of Pd and Au, or a p-type-use electrode formed of a stack of Ag and Au, or a p-type use electrode formed of a stack of Pd, Ag and Au; and
a silicon-doped nitride-based semiconductor layer represented by InaGa1-aN (0<
a≦
1) is formed on said n-type nitride-based semiconductor layer, an upper surface of the silicon-doped nitride-based semiconductor layer is said light extracting surface, and a concentration of silicon contained in the silicon-doped nitride-based semiconductor layer is in the range of 5×
1020˜
5×
1021 cm−
3.
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6. A nitride-based semiconductor light-emitting device comprising:
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a reflective layer formed on a support substrate;
a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer;
wherein a light extracting surface located above said n-type nitride-based semiconductor layer has irregularities;
a translucent electrode formed on said light extracting surface, wherein said electrode is formed of a metal selected from a group consisting of aluminum, titanium, zirconium, hafnium, vanadium, niobium, and indium-tin oxide;
wherein the reflective layer is in ohmic contact with the p-type nitride-based semiconductor layer, and the reflective layer is formed of;
a p-type-use electrode comprising Pd or Ag, or a p-type-use electrode formed of a stack of Pd and Au, or a p-type-use electrode formed of a stack of Ag and Au, or a p-type use electrode formed of a stack of Pd, Ag and Au; and
a nitride-based semiconductor layer represented by InaGa1-aN (0<
a≦
1) is formed on said n-type nitride-based semiconductor layer and an upper surface of said nitride-based semiconductor layer represented by InaGa1-aN (0<
a≦
1) is said light extracting surface.
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7. A nitride-based semiconductor light-emitting device comprising:
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a reflective layer formed on a support substrate;
a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer;
wherein a light extracting surface located above said n-type nitride-based semiconductor layer has irregularities;
a translucent electrode formed on said light extracting surface, wherein said electrode is formed of a metal selected from a group consisting of aluminum, titanium, zirconium, hafnium, vanadium, niobium, and indium-tin oxide;
wherein the reflective layer is in ohmic contact with the p-type nitride-based semiconductor layer, and the reflective layer is formed of;
a p-type-use electrode comprising Pd or Ag, or a p-type-use electrode formed of a stack of Pd and Au, or a p-type-use electrode formed of a stack of Ag and Au, or a p-type use electrode formed of a stack of Pd, Ag and Au; and
a silicon-doped nitride-based semiconductor layer represented by InaGa1-aN (0<
a≦
1) is formed on said n-type nitride-based semiconductor layer, an upper surface of the silicon-doped nitride-based semiconductor layer is said light extracting surface, and a concentration of silicon contained in the silicon-doped nitride-based semiconductor layer is in the range of 5×
1020˜
5×
1021 cm−
3.
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8. A nitride-based semiconductor light-emitting device comprising:
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a reflective layer formed on an electrically conductive support substrate;
a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer;
wherein a light extracting surface located above said n-type nitride-based semiconductor layer has irregularities;
wherein the reflective layer is in ohmic contact with the p-type nitride-based semiconductor layer, and the reflective layer is formed of;
a p-type-use electrode comprising Pd or Ag, or a p-type-use electrode formed of a stack of Pd and Au, or a p-type-use electrode formed of a stack of Ag and Au, or a p-type use electrode formed of a stack of Pd, Ag and Au; and
an n-type GaN layer is formed on the n-type nitride-based semiconductor layer, and an upper surface of said n-type GaN layer is said light extracting surface.
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Specification