Insulated gate-type semiconductor device and manufacturing method thereof

• US 20060273387A1
• Filed: 06/02/2006
• Published: 12/07/2006
• Est. Priority Date: 06/03/2005
• Status: Active Grant

• Current Assignee: DENSO Corporation
• Original Assignee: Toyota Jidosha Kabushiki Kaisha (Toyota Motor Corporation)
• Inventors: Hisanaga, Yukihiro
• Granted Patent: US 7,972,928 B2
• Time in Patent Office: Days
• US Class Current: 257/330
• CPC Class Codes: H01L 29/66333 Vertical insulated gate bipolar transistors
• CPC Class Codes: H01L 29/7395 Vertical transistors, e.g. vertical IGBT

Abstract

This invention has a purpose to provide an insulated gate-type semiconductor device and its manufacturing method in which a decrease in gate insulation dielectric strength voltage and a reduction in manufacturing costs are both achieved. First, (a) a CZ bulk substrate is prepared. Next, (b) P⁻ diffused layer and N⁺ diffused layer 31 are formed by executing processes such as ion implantation and thermal diffusion treatment. Further (c) a gate trench is formed by reactive ion etching. Next, (d) a gate insulation film containing carbon of 1.0×10¹⁸ atoms/cm³ is formed on the wall face of a gate trench according to a CVD method and, annealing is subsequently performed. As a consequence, a low defect area is formed in the vicinity of an interface between the CZ bulk substrate and the gate insulation film.

Claims

1. A manufacturing method of an insulated gate type semiconductor device made up of a silicon substrate manufactured according to the Czochralski (CZ) process, comprising:

an insulation film-forming step of forming on a surface of the silicon substrate a gate insulation film having a carbon content of more than 1.0×

10¹⁷ atoms/cm³; and

a step of annealing the silicon substrate on which the insulation film has been formed.

2. The manufacturing method of an insulated gate-type semiconductor device according to claim 1,

wherein in the insulation film-forming step the insulation film is formed according to a chemical vapor growth method (a CVD method) with a carbon organic material used as a material gas.

3. A manufacturing method of an insulated gate-type semiconductor device made up of a silicon substrate manufactured according to the Czochralski (CZ) process, comprising:

an insulation film-forming step of forming a gate insulation film having a higher concentration of carbon than an oxygen concentration of the silicon substrate; and

a step of annealing the silicon substrate on which the insulation film has been formed.

4. The manufacturing method of an insulated gate-type semiconductor device according to claim 3,

wherein in the insulation film-forming step the insulation film is formed according to a chemical vapor growth method(a CVD method) with a carbon organic material used as a material gas.

5. An insulated gate-type semiconductor device made up of a silicon substrate manufactured according to the Czochralski (CZ) process, comprising:

a gate electrode area; and

a gate insulation film that makes contact with the silicon substrate and insulates the gate electrode area from the silicon substrate,

wherein the gate insulation film is formed as an insulation film having a carbon content of more than 1.0×

10¹⁷ atoms/cm³ and is subsequently completed by annealing.

6. The insulated gate type semiconductor device according to claim 5, wherein the gate insulation film is an insulation film formed according to a chemical vapor growth method (a CVD method) with a carbon organic material used as a material gas.

7. An insulated gate type semiconductor device made up of a silicon substrate manufactured according to the Czochralski (CZ) process, comprising:

a gate electrode area; and

a gate insulation film that makes contact with the silicon substrate and insulates the gate electrode area from the silicon substrate,

wherein the gate insulation film is formed as an insulation film having a higher concentration of carbon than an oxygen concentration of the silicon substrate and is subsequently completed by annealing after that.

8. The insulated gate type semiconductor device according to claim 7,

wherein the gate insulation film is an insulation film formed according to a chemical vapor growth method (a CVD method) with a carbon organic material used as a material gas.