Silicon thin film transistor and method of manufacturing the same
First Claim
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1. A silicon thin film transistor comprising:
- a plastic substrate having a first surface and a second surface on an opposite side from the first surface;
a first buffer layer and a second buffer layer deposited on the first and second surfaces of the plastic substrate, respectively;
a silicon channel deposited on the first buffer layer;
a gate insulator deposited on the silicon channel; and
a gate deposited on the gate insulator.
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Abstract
A silicon thin film transistor (“TFT”) and method of manufacturing the same are provided where the silicon TFT includes buffer layers deposited on both surfaces of a substrate, respectively, and a silicon channel is deposited on one of the buffer layers. A gate insulator is deposited on the silicon channel, and a gate is deposited on the gate insulator. Because of the buffer layers deposited on both surfaces of the substrate, the bending of the substrate is prevented and the silicon TFT has good operating performance.
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Citations
25 Claims
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1. A silicon thin film transistor comprising:
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a plastic substrate having a first surface and a second surface on an opposite side from the first surface;
a first buffer layer and a second buffer layer deposited on the first and second surfaces of the plastic substrate, respectively;
a silicon channel deposited on the first buffer layer;
a gate insulator deposited on the silicon channel; and
a gate deposited on the gate insulator. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A thin film transistor comprising:
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a substrate formed from a flexible material and having a first surface and an opposite second surface;
a first buffer layer deposited on the first surface; and
,a second buffer layer deposited on the second surface, the plastic substrate disposed between the first buffer layer and the second buffer layer;
wherein the first buffer layer and the second buffer layer are formed of a material preventing the substrate from bending. - View Dependent Claims (12, 13, 14)
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15. A method of manufacturing a silicon thin film transistor including a substrate having a first surface and a second surface on an opposite side from the first surface, a silicon thin layer deposited on the substrate, a gate corresponding to the silicon thin layer, and a gate insulator interposed between the silicon thin layer and the gate, the method comprising:
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forming first and second buffer layers on the first and second surfaces of the substrate, respectively, before forming the silicon thin layer; and
forming the silicon thin layer on the first buffer layer formed on the first surface of the substrate. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification