Method of depositing Ge-Sb-Te thin film
First Claim
Patent Images
1. A method of depositing a Ge—
- Sb—
Te thin film, comprising;
a Ge—
Sb—
Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—
Sb—
Te thin film on the wafer; and
a reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed and purged.
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Abstract
There is provided a method of depositing a Ge—Sb—Te thin film, including: a Ge—Sb—Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—Sb—Te thin film on the wafer; and a reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed.
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Citations
22 Claims
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1. A method of depositing a Ge—
- Sb—
Te thin film, comprising;
a Ge—
Sb—
Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—
Sb—
Te thin film on the wafer; and
a reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed and purged. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
- Sb—
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11. A method of depositing a Ge—
- Sb—
Te thin film, comprising;
a Ge—
Sb—
Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—
Sb—
Te thin film on the wafer; and
a reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed and purged, wherein plasma is applied into the chamber while the reaction gas is fed. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
- Sb—
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21. A method of depositing a Ge—
- Sb—
Te thin film, comprising;
a Ge—
Sb—
Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—
Sb—
Te thin film on the wafer; and
a reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed. - View Dependent Claims (22)
- Sb—
Specification