Method of depositing Ge-Sb-Te thin film

• US 20070048977A1
• Filed: 08/22/2006
• Published: 03/01/2007
• Est. Priority Date: 08/24/2005
• Status: Active Grant

• Current Assignee: Wonik IPS Co., Ltd.
• Original Assignee: Wonik IPS Co., Ltd.
• Inventors: Lee, Jung-Wook, Lee, Ki-Hoon, Seo, Tae-Wook, Cho, Byung-Chul
• Granted Patent: US 8,029,859 B2
• Time in Patent Office: Days
• US Class Current: 438/483
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/45523 Pulsed gas flow or change of composition over time

Abstract

There is provided a method of depositing a Ge—Sb—Te thin film, including: a Ge—Sb—Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—Sb—Te thin film on the wafer; and a reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed.

Claims

1. A method of depositing a Ge—

Sb—

Te thin film, comprising;

a Ge—

Sb—

Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—

Sb—

Te thin film on the wafer; and

a reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed and purged.

2. The method of claim 1, wherein the Ge—

Sb—

Te thin-film forming step is performed by sequentially performing a feeding step of feeding the first precursor, a purging step of purging the first precursor, a feeding step of feeding the second precursor, a purging step of purging the second precursor, a feeding step of feeding the third precursor and a purging step of purging the third precursor.

3. The method of claim 2, wherein the composition of the elements of the Ge—

Sb—

Te thin film can be adjusted by adjusting the vapor pressures and the temperatures of the first to third precursors or adjusting times for feeding the first to third precursors or the amount of carrier gas in a state where the vapor pressures and the temperatures are fixed.

4. The method of claim 1, wherein the Ge—

Sb—

Te thin-film forming step is performed by sequentially performing a feeding step of simultaneously feeding the first precursor and the second precursor, a purging step of simultaneously purging the first precursor and the second precursor, a feeding step of simultaneously feeding the second precursor and the third precursor and a purging step of simultaneously purging the second precursor and the third precursor.

5. The method of claim 4, wherein the composition of the elements of the Ge—

Sb—

Te thin film can be adjusted by adjusting the vapor pressures and the temperatures of the first to third precursors or adjusting a time for feeding the first and second precursors and a time for feeding the second and third precursors or the amount of carrier gas in a state where the vapor pressures and the temperatures are fixed.

6. The method of claim 1, wherein the Ge—

Sb—

Te thin-film forming step is performed by sequentially performing a feeding step of simultaneously feeding the first to third precursors and a purging step of simultaneously purging the first to third precursors.

7. The method of claim 6, wherein the composition of the elements of the Ge—

Sb—

Te thin film can be adjusted by adjusting the vapor pressures and the temperatures of the first to third precursors or adjusting a time for feeding the first to third precursors or the amount of carrier gas in a state where the vapor pressures and the temperatures are fixed.

8. The method of claim 1, wherein the reaction gas is at least one selected from the group consisting of H₂ and NH₃ or a mixture of the at least one selected from the group consisting of H₂ and NH₃ and inert gas.

9. The method of claim 1, wherein the temperature of the wafer is in a range of 20°

C. to 700°

C.

10. The method of claim 1, wherein the pressure of the chamber is in a range of 0.1 Torr to 100 Torr.

11. A method of depositing a Ge—

Sb—

Te thin film, comprising;

a Ge—

Sb—

Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—

Sb—

Te thin film on the wafer; and

a reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed and purged,

wherein plasma is applied into the chamber while the reaction gas is fed.

12. The method of claim 11, wherein the Ge—

Sb—

Te thin-film forming step is performed by sequentially performing a feeding step of feeding the first precursor, a purging step of purging the first precursor, a feeding step of feeding the second precursor, a purging step of purging the second precursor, a feeding step of feeding the third precursor, a purging step of purging the third precursor, a feeding step of feeding the second precursor again, and a purging step of purging the second precursor again, the first precursor includes Ge, the second precursor includes Te, and the third precursor includes Sb.

13. The method of claim 12, wherein the composition of the elements of the Ge—

Sb—

Te thin film can be adjusted by adjusting the vapor pressures and the temperatures of the first to third precursors or adjusting times for feeding the first to third precursors or the amount of carrier gas in a state where the vapor pressures and the temperatures are fixed.

14. The method of claim 11, wherein the Ge—

Sb—

Te thin-film forming step is performed by sequentially performing a feeding step of feeding the first precursor, a purging step of purging the first precursor, a feeding step of feeding the second precursor, a purging step of purging the second precursor, a feeding step of feeding the third precursor and a purging step of purging the third precursor.

15. The method of claim 14, wherein the composition of the elements of the Ge—

Sb—

Te thin film can be adjusted by adjusting the vapor pressures and the temperatures of the first to third precursors or adjusting times for feeding the first to third precursors or the amount of carrier gas in a state where the vapor pressures and the temperatures are fixed.

16. The method of claim 11, wherein the Ge—

Sb—

Te thin-film forming step is performed by sequentially performing a feeding step of simultaneously feeding the first precursor and the second precursor, a purging step of simultaneously purging the first precursor and the second precursor, a feeding step of simultaneously feeding the second precursor and the third precursor and a purging step of simultaneously purging the second precursor and the third precursor.

17. The method of claim 16, wherein the composition of the elements of the Ge—

Sb—

Te thin film can be adjusted by adjusting the vapor pressures and the temperatures of the first to third precursors or adjusting a time for feeding the first and second precursors and a time for feeding the second and third precursors or the amount of carrier gas in a state where the vapor pressures and the temperatures are fixed.

18. The method of claim 11, wherein the Ge—

Sb—

Te thin-film forming step is performed by sequentially performing a feeding step of simultaneously feeding the first to third precursors and a purging step of simultaneously purging the first to third precursors.

19. The method of claim 18, wherein the composition of the elements of the Ge—

Sb—

Te thin film can be adjusted by adjusting the vapor pressures and the temperatures of the first to third precursors or adjusting a time for feeding the first to third precursors or the amount of carrier gas in a state where the vapor pressures and the temperatures are fixed.

20. The method of claim 11, wherein the reaction gas is at least one selected from the group consisting of H₂, NH₃ and He or a mixture of the at least one selected from the group consisting of H₂, NH₃ and He and inert gas.

21. A method of depositing a Ge—

Sb—

Te thin film, comprising;

a Ge—

Sb—

Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—

Sb—

Te thin film on the wafer; and

a reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed.

22. The method of claim 21, wherein plasma is applied into the chamber while the reaction gas is fed.