Infrared sensor ic, and infrared sensor and manufacturing method thereof
First Claim
1. An infrared sensor IC comprising:
- a compound semiconductor sensor, having a compound semiconductor including indium and antimony, and detecting an infrared radiation by said compound semiconductor to output an electric signal indicating the detection; and
an integrated circuit processing said electric signal output by said compound semiconductor sensor to perform a predetermined operation, wherein said compound semiconductor sensor and said integrated circuit are arranged in a single package in a hybrid manner.
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Accused Products
Abstract
An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.
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Citations
28 Claims
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1. An infrared sensor IC comprising:
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a compound semiconductor sensor, having a compound semiconductor including indium and antimony, and detecting an infrared radiation by said compound semiconductor to output an electric signal indicating the detection; and
an integrated circuit processing said electric signal output by said compound semiconductor sensor to perform a predetermined operation, wherein said compound semiconductor sensor and said integrated circuit are arranged in a single package in a hybrid manner. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. An infrared sensor comprising:
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a substrate; and
a compound semiconductor stacked layers formed on said substrate by stacking a plurality of compound semiconductor layers, said compound semiconductor stacked layers comprising;
a sixth compound semiconductor layer, formed on said substrate, that is an n-type doped material including indium and antimony;
a seventh compound semiconductor layer, formed on said sixth compound semiconductor layer, that is a non-doped or p-type doped material including indium and antimony; and
an eighth compound semiconductor layer, formed on said seventh compound semiconductor layer, that is a material that is p-doped at a higher carrier density than said seventh compound semiconductor layer and has a larger band gap than said seventh compound semiconductor layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. An infrared sensor manufacturing method comprising the steps of:
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forming, on a substrate, a sixth compound semiconductor layer that is an n-type material including indium and antimony;
forming, on said sixth compound semiconductor layer, a seventh compound semiconductor layer that is a non-doped or p-doped material including indium and antimony; and
forming, on said seventh compound semiconductor layer, an eighth compound semiconductor layer that is a material that is p-type doped at a higher carrier density than said seventh compound semiconductor layer and has a larger band gap than said seventh compound semiconductor layer. - View Dependent Claims (24, 25, 26, 27, 28)
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Specification