SEMICONDUCTOR DEVICE INCLUDING A CRYSTAL SEMICONDUCTOR LAYER, ITS FABRICATION AND ITS OPERATION
First Claim
1. A method of fabricating a semiconductor device comprising:
- preparing a semiconductor substrate;
forming a preliminary active pattern on the semiconductor substrate, the preliminary active pattern having a barrier pattern and a non-single crystal semiconductor pattern, which are stacked;
forming a sacrificial non-single crystal semiconductor layer covering the preliminary active pattern and the semiconductor substrate;
crystallizing the sacrificial non-single crystal semiconductor layer and the non-single crystal semiconductor pattern, using the semiconductor substrate as a seed layer, thereby changing the sacrificial non-single crystal semiconductor layer and the non-single crystal semiconductor pattern to a sacrificial crystalline semiconductor layer and a crystalline semiconductor pattern respectively, the crystalline semiconductor pattern and the barrier pattern constituting an active pattern; and
removing the sacrificial crystalline semiconductor layer.
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Abstract
In one embodiment, a method of fabricating a semiconductor device having a crystalline semiconductor layer includes preparing a semiconductor substrate and forming a preliminary active pattern on the semiconductor substrate. The preliminary active pattern includes a barrier pattern and a non-single crystal semiconductor pattern. A sacrificial non-single crystal semiconductor layer covers the preliminary active pattern and the semiconductor substrate. By crystallizing the sacrificial non-single crystal semiconductor layer and the non-single crystal semiconductor pattern, using the semiconductor substrate as a seed layer, the sacrificial non-single crystal semiconductor layer and the non-single crystal semiconductor pattern are changed to a sacrificial crystalline semiconductor layer and a crystalline semiconductor pattern, respectively. The crystalline semiconductor pattern and the barrier pattern constitute an active pattern. The sacrificial crystalline semiconductor layer is removed.
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Citations
36 Claims
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1. A method of fabricating a semiconductor device comprising:
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preparing a semiconductor substrate;
forming a preliminary active pattern on the semiconductor substrate, the preliminary active pattern having a barrier pattern and a non-single crystal semiconductor pattern, which are stacked;
forming a sacrificial non-single crystal semiconductor layer covering the preliminary active pattern and the semiconductor substrate;
crystallizing the sacrificial non-single crystal semiconductor layer and the non-single crystal semiconductor pattern, using the semiconductor substrate as a seed layer, thereby changing the sacrificial non-single crystal semiconductor layer and the non-single crystal semiconductor pattern to a sacrificial crystalline semiconductor layer and a crystalline semiconductor pattern respectively, the crystalline semiconductor pattern and the barrier pattern constituting an active pattern; and
removing the sacrificial crystalline semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A semiconductor device comprising:
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a semiconductor substrate; and
an active pattern disposed on the semiconductor substrate, the active pattern having a barrier pattern and a crystalline semiconductor pattern stacked on the barrier pattern, the crystalline semiconductor pattern having substantially the same crystal structure as that of the semiconductor substrate. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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32. A method of operating a one-transistor memory device comprising:
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forming a one-transistor memory cell on a semiconductor substrate, the one-transistor memory cell comprising an active pattern on the semiconductor substrate, a source and a drain inside the active pattern, a gate electrode covering the active pattern between the source and the drain, and a gate insulating layer between the gate electrode and the active pattern, and the active pattern comprising a barrier pattern and a crystalline semiconductor pattern, which are sequentially stacked; and
applying a write voltage between the semiconductor substrate and the gate electrode, thereby implanting carriers from the semiconductor substrate into the crystalline semiconductor pattern. - View Dependent Claims (33, 34, 35, 36)
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Specification