Inductive Heating of Microelectronic Components
First Claim
1. A method for heat treating a plurality of resilient conductive interconnect structures, the method comprising:
- providing a contactor comprising a substrate to which the plurality of resilient conductive interconnect structures are attached;
placing the contactor in an oscillating electromagnetic field, the oscillating electromagnetic field heating the resilient conductive interconnect structures without substantially heating the substrate; and
maintaining the contactor in the oscillating electromagnetic field until a substantially entire portion of each of the resilient conductive interconnect structures substantially obtains a defined heat-treatment temperature substantially greater than an ambient temperature for a predetermined period of time sufficient to permanently change a mechanical operating property of the resilient conductive interconnect structures
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Accused Products
Abstract
A method for heat-treating a plurality of microelectronic structures attached to a non-metallic substrate is disclosed. Each of the plurality of microelectronic structures is comprised of a metallic material, and ones of the plurality of metallic microelectronic structures are insulated from other ones of the plurality of microelectronic structures. An application of the method is for heat-treatment of resilient microstructures. The method comprises the steps of: (a) placing the non-metallic substrate and the plurality of microelectronic structures in an oscillating electromagnetic field, whereby the plurality of microelectronic structures are heated by the oscillating electromagnetic field and the non-metallic substrate is essentially not heated by the oscillating electromagnetic field; (b) maintaining the non-metallic substrate and the plurality of microelectronic structures in the oscillating electromagnetic field until each of the plurality of microelectronic structures obtains a defined heat-treatment temperature substantially greater than an ambient temperature; (c) removing the non-metallic substrate and the plurality of microelectronic structures from the oscillating electromagnetic field; and (d) cooling the plurality of microelectronic structures to the ambient temperature.
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Citations
26 Claims
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1. A method for heat treating a plurality of resilient conductive interconnect structures, the method comprising:
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providing a contactor comprising a substrate to which the plurality of resilient conductive interconnect structures are attached;
placing the contactor in an oscillating electromagnetic field, the oscillating electromagnetic field heating the resilient conductive interconnect structures without substantially heating the substrate; and
maintaining the contactor in the oscillating electromagnetic field until a substantially entire portion of each of the resilient conductive interconnect structures substantially obtains a defined heat-treatment temperature substantially greater than an ambient temperature for a predetermined period of time sufficient to permanently change a mechanical operating property of the resilient conductive interconnect structures - View Dependent Claims (2, 12, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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3-11. -11. (canceled)
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13. (canceled)
Specification