Semiconductor device having internal stress film
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Abstract
A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the NMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.
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Citations
43 Claims
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1-14. -14. (canceled)
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15. A semiconductor device, comprising a MISFET, wherein the MISFET includes:
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an active region made of the semiconductor substrate;
a gate insulating film formed on the active region;
a gate electrode formed on the gate insulating film;
source/drain regions formed in regions of the active region located on both sides of the gate electrode; and
an internal stress film formed on the source/drain regions and for generating a stress in a gate length direction in a channel region located in the active region under the gate electrode, and the internal stress film is not formed on an upper surface of the gate electrode. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
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Specification