CCD with improved charge transfer

• US 20070254413A1
• Filed: 04/26/2006
• Published: 11/01/2007
• Est. Priority Date: 04/26/2006
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Eastman Kodak Company
• Inventors: Parks, Christopher, McCarten, John P., Summa, Joseph R.
• Granted Patent: US 7,807,514 B2
• Time in Patent Office: Days
• US Class Current: 438/144
• CPC Class Codes: H01L 27/14831 Area CCD imagers
• CPC Class Codes: H01L 29/66946 Charge transfer devices
• CPC Class Codes: H01L 29/76833 Buried channel CCD

Abstract

A method of forming a charge-coupled device including the steps of forming well or substrate of a first conductivity type; a buried channel of a second conductivity type; a plurality of first gate electrodes; partially coating the first gate electrodes with a mask substantially aligned to an edge of the first gate electrodes; implanting ions of the first conductivity type of sufficient energy to penetrate the first gates and into the buried channel; and a plurality of second gate electrodes covering regions each over the buried channel between the first gate electrodes.

Claims

1. A method of forming a charge-coupled device comprising the steps of:

(a) forming well or substrate of a first conductivity type;

(b) a buried channel of a second conductivity type;

(c) a plurality of first gate electrodes;

(d) partially coating the first gate electrodes with a mask substantially aligned to an edge of the first gate electrodes;

(e) implanting ions of the first conductivity type of sufficient energy to penetrate the first gates and into the buried channel; and

(f) a plurality of second gate electrodes covering regions each over the buried channel between the first gate electrodes.

2. The method as in claim 1, wherein the step of implanting ions includes implanting the buried channel that is between the plurality of first gate electrodes.

3. A method of forming a charge coupled device comprising the steps of:

(a) forming a well or substrate of a first conductivity type;

forming a buried channel of a second conductivity type;

(b) forming a plurality of first gate electrodes;

(c) partially coating the first gate electrode with a mask substantially aligned to the edge of the first gate electrode;

(d) implanting ions of the first conductivity type of sufficient energy to penetrate the first gate and enter the buried channel;

(e) implanting ions of the first conductivity type of energy that they do not penetrate the first gate but penetrate the buried channel that is between the plurality of first gate electrodes; and

(f) forming a plurality of second gate electrodes covering a region over the buried channel between the first gate electrodes.

4. A method of forming a camera comprising the steps of:

(a) providing a camera body;

(b) providing a charge-coupled device in the camera body, the method of providing the charge-coupled device comprising the steps of;

(i) forming well or substrate of a first conductivity type;

(ii) a buried channel of a second conductivity type;

(iii) a plurality of first gate electrodes;

(iv) partially coating the first gate electrodes with a mask substantially aligned to an edge of the first gate electrodes;

(v) implanting ions of the first conductivity type of sufficient energy to penetrate the first gates and into the buried channel; and

(vi) a plurality of second gate electrodes covering regions each over the buried channel between the first gate electrodes.

5. The method as in claim 4, wherein the step of implanting ions includes implanting the buried channel that is between the plurality of first gate electrodes.

6. A method of forming a camera comprising the steps of:

(a) providing a camera body;

(b) providing a charge-coupled device in the camera body, the method of providing the charge-coupled device comprising;

(i) forming a well or substrate of a first conductivity type;

forming a buried channel of a second conductivity type;

(ii) forming a plurality of first gate electrodes;

(iii) partially coating the first gate electrode with a mask substantially aligned to the edge of the first gate electrode;

(iv) implanting ions of the first conductivity type of sufficient energy to penetrate the first gate and enter the buried channel;

(v) implanting ions of the first conductivity type of energy that they do not penetrate the first gate but penetrate the buried channel that is between the plurality of first gate electrodes; and

(vi) forming a plurality of second gate electrodes covering a region over the buried channel between the first gate electrodes.