REACTIVE SPUTTERING ZINC OXIDE TRANSPARENT CONDUCTIVE OXIDES ONTO LARGE AREA SUBSTRATES
First Claim
1. A physical vapor deposition apparatus, comprising:
- one or more sputtering targets;
a substrate support;
one or more anodes disposed between the one or more sputtering targets and the substrate support; and
one or more gas distribution tubes coupled with the one or more anodes and one or more gas sources.
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Accused Products
Abstract
The present invention generally comprises one or more cooled anodes shadowing one or more gas introduction tubes where both the cooled anodes and the gas introduction tubes span a processing space defined between one or more sputtering targets and one or more substrates within a sputtering chamber. The gas introduction tubes may have gas outlets that direct the gas introduced away from the one or more substrates. The gas introduction tubes may introduce reactive gas, such as oxygen, into the sputtering chamber for depositing TCO films by reactive sputtering. During a multiple step sputtering process, the gas flows (i.e., the amount of gas and the type of gas), the spacing between the target and the substrate, and the DC power may be changed to achieve a desired result.
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Citations
24 Claims
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1. A physical vapor deposition apparatus, comprising:
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one or more sputtering targets;
a substrate support;
one or more anodes disposed between the one or more sputtering targets and the substrate support; and
one or more gas distribution tubes coupled with the one or more anodes and one or more gas sources. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A physical vapor deposition apparatus, comprising:
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a chamber body;
one or more sputtering targets disposed within the chamber body;
a substrate support disposed within the chamber body; and
one or more tubes disposed within the chamber body between the one or more sputtering targets and the substrate support, the one or more tubes comprising an anode and one or more gas outlets. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A physical vapor deposition method, comprising:
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positioning at least one tube assembly in a processing space between one or more sputtering targets and a susceptor, the tube assembly comprising an anode with a cooling channel therein and a gas distribution tube;
cooling the at least one tube assembly with a cooling fluid flowing within the anode;
flowing processing gas through the gas distribution tube; and
sputtering material from the one or more sputtering targets onto a substrate. - View Dependent Claims (19, 20, 21, 22, 23, 24)
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Specification