THIN FILM TRANSISTOR, METHOD OF FABRICATING ACTIVE LAYER THEREOF, AND LIQUID CRYSTAL DISPLAY
First Claim
Patent Images
1. A method of fabricating an active layer of a thin film transistor, comprising:
- providing a substrate;
preparing a semiconductor precursor solution using a liquid process;
applying the semiconductor precursor solution on the substrate to form a semiconductor precursor thin film; and
irradiating the semiconductor precursor thin film with a light source to remove residual solvent in the semiconductor precursor thin film and transform the semiconductor precursor thin film into an active semiconductor layer having semiconductor property.
1 Assignment
0 Petitions
Accused Products
Abstract
A manufacturing method of an active layer of a thin film transistor is provided. The method includes following steps. First a substrate is provided, and a semiconductor precursor solution is then prepared through a liquid process. Thereafter, the semiconductor precursor solution is provided on the substrate to form a semiconductor precursor thin film. After that, a light source is used to irradiate the semiconductor precursor thin film to remove residual solvent and allow the semiconductor precursor thin film to produce semiconductor property, so as to form a semiconductor active layer.
-
Citations
33 Claims
-
1. A method of fabricating an active layer of a thin film transistor, comprising:
-
providing a substrate; preparing a semiconductor precursor solution using a liquid process; applying the semiconductor precursor solution on the substrate to form a semiconductor precursor thin film; and irradiating the semiconductor precursor thin film with a light source to remove residual solvent in the semiconductor precursor thin film and transform the semiconductor precursor thin film into an active semiconductor layer having semiconductor property. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A thin film transistor, comprising:
-
a substrate; a gate, a source, and a drain, respectively disposed on the substrate; an insulating layer, disposed on the substrate isolating the gate and the source/drain; and a semiconductor active layer, connecting the source and the drain, wherein the material of the semiconductor active layer is a semiconductor precursor which produces semiconductor property after being irradiated by a light source. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
-
Specification