Method for modulating stresses of a contact etch stop layer
First Claim
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1. A method for forming a semiconductor structure, the method comprising:
- providing a substrate;
forming a stressed layer overlying the substrate, the stressed layer having a first-type stress;
forming a patterned masking layer on the stressed layer; and
performing an electromagnetic radiation treatment on the stressed layer, wherein the first-type stress of an unmasked portion of the stressed layer is convert to a second-type stress.
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Abstract
A method for forming a semiconductor structure includes providing a substrate comprising a first device region, forming a metal-oxide-semiconductor (MOS) device in the first device region, forming a stressed layer over the MOS device, and performing a post-treatment to modulate a stress of the stressed layer. The post-treatment is selected from the group consisting essentially of ultra-violet (UV) curing, laser curing, e-Beam curing, and combinations thereof.
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Citations
20 Claims
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1. A method for forming a semiconductor structure, the method comprising:
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providing a substrate; forming a stressed layer overlying the substrate, the stressed layer having a first-type stress; forming a patterned masking layer on the stressed layer; and performing an electromagnetic radiation treatment on the stressed layer, wherein the first-type stress of an unmasked portion of the stressed layer is convert to a second-type stress. - View Dependent Claims (2, 3, 4, 5)
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6. A method for forming a semiconductor structure, the method comprising:
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providing a substrate comprising a first device region; forming a first metal-oxide-semiconductor (MOS) device in the first device region; forming a stressed layer over the first MOS device; and performing a post-treatment to modulate a stress of the stressed layer, wherein the post-treatment is selected from the group consisting essentially of ultra-violet (UV) curing, laser curing, e-Beam curing and combinations thereof. - View Dependent Claims (7, 8, 9, 10, 11, 12)
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13. A method for forming a semiconductor structure, the method comprising:
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providing a substrate having an active region; forming an MOS device in the active region; forming a contact etch stop layer overlying the MOS device, wherein the contact etch stop layer comprises a material selected from the group consisting essentially of carbon-doped silicon oxide, carbon-doped silicon nitride, silicon nitride, silicon oxynitride, and combinations thereof; and performing a UV curing process to the contact etch stop layer. - View Dependent Claims (14, 15, 16)
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17. A method for forming a semiconductor structure, the method comprising:
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providing a substrate having a first active region and a second active region; forming a first MOS device in the first active region; forming a second MOS device having an opposite conductivity type than the first MOS device in the second active region; forming a contact etch stop layer overlying the first and the second MOS devices; forming a mask layer to mask the first MOS device; and performing a curing process to modulate a stress of the contact etch stop layer over the second MOS device, wherein, after the curing process, the stress is of an opposite type than before the curing process, and wherein the curing process is selected from the group consisting essentially of ultra-violet (UV) curing, laser curing, e-Beam curing, and combinations thereof. - View Dependent Claims (18, 19, 20)
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Specification