SYSTEM AND METHOD FOR RECOVERY FROM MEMORY ERRORS IN A MEDICAL DEVICE
First Claim
Patent Images
1. An apparatus comprising:
- an implantable medical device comprising;
a memory; and
a controller circuit, coupled to the memory, wherein the controller circuit is configured to;
monitor a number of errors encountered while accessing memory locations in a normal operation mode, the monitoring including error checking all memory locations of the memory using a first rate of error checking per time period during the normal operation mode;
determine a rate of memory errors per time period using the monitored number of errors;
compare the rate of memory errors per time period to a programmable initiation threshold rate of memory errors per time period; and
when the rate of memory errors per time period exceeds the programmable initiation threshold error rate, then entering the memory scrubbing mode, wherein the memory scrubbing mode has an increased rate of error checking substantially all memory locations of the memory per time period.
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Abstract
A system comprising an implantable medical device that comprises at least one electrical input to receive sensed electrical activity of a heart of a patient, a memory, and a controller circuit. The controller circuit is coupled to the electrical input and memory and is operable to enter a memory scrubbing mode that increases a rate of detecting and correcting single bit errors in the memory when the controller circuit determines the implantable device is in a high-energy radiation environment.
19 Citations
20 Claims
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1. An apparatus comprising:
an implantable medical device comprising;
a memory; and
a controller circuit, coupled to the memory, wherein the controller circuit is configured to;
monitor a number of errors encountered while accessing memory locations in a normal operation mode, the monitoring including error checking all memory locations of the memory using a first rate of error checking per time period during the normal operation mode;
determine a rate of memory errors per time period using the monitored number of errors;
compare the rate of memory errors per time period to a programmable initiation threshold rate of memory errors per time period; and
when the rate of memory errors per time period exceeds the programmable initiation threshold error rate, then entering the memory scrubbing mode, wherein the memory scrubbing mode has an increased rate of error checking substantially all memory locations of the memory per time period. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method comprising:
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monitoring a number of errors encountered while an implantable device is accessing memory locations in a normal operation mode, the monitoring including error checking all memory locations of the memory at a first rate of error checking per time period during the normal operation mode;
using the monitored number of errors to determine a rate of memory errors per time period;
comparing the rate of memory errors per time period to a programmable initiation threshold rate of memory errors per time period;
when the rate of memory errors per time period exceeds the programmable initiation threshold error rate, then entering a memory scrubbing mode; and
during the memory scrubbing mode, increasing a rate of error checking of substantially all memory locations of the memory per time period to detect and correct memory errors in the implantable device. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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19. An apparatus comprising:
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means for;
monitoring a number of errors encountered while accessing memory locations in a normal operation mode, the monitoring including error checking substantially all memory locations of the memory at a first rate of error checking per time period during the normal operation mode;
using the monitored number of errors per time period to determine a rate of memory errors per time period;
comparing the rate of memory errors per time period to a programmable threshold rate of memory errors per time period; and
detecting that the rate of memory errors per time period exceeds the programmable threshold error rate per time period;
means for enabling a memory scrubbing mode in response to the implantable medical device detecting that the rate of memory errors per time period exceeds the programmable threshold error rate; and
means for increasing a rate of error checking of all memory locations of the memory per time period during the memory scrubbing mode to detect and correct memory errors in the device upon the enabling of the scrubbing mode. - View Dependent Claims (20)
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Specification