STACKED STRUCTURES AND METHODS OF FABRICATING STACKED STRUCTURES
First Claim
1. A method of forming a semiconductor device, comprising the steps of:
- forming at least one transistor gate over a first substrate and at least one first dummy structure within the first substrate and at least one first conductive structure formed therethrough at least partially over a surface of the dummy structure;
forming an interlayer dielectric (ILD) layer over the gate transistor, the ILD layer comprising at least one contact structure formed therein and making electrical contact with the transistor gate;
forming a passivation layer over the ILD layer, the passivation layer comprising at least one first pad structure formed therein and making electrical contact with the conductive structure;
bonding the first substrate with a second substrate;
removing at least a portion of the first dummy structure, thereby forming a first opening; and
forming a conductive material within the first opening for formation of a second conductive structure, the second conductive structure being electrically coupled to the first conductive structure.
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Accused Products
Abstract
A method includes: forming a transistor gate over a first substrate and at least one first dummy structure within the first substrate; forming an interlayer dielectric (ILD) layer over the gate transistor, the ILD layer including at least one contact structure formed therein and making electrical contact with the transistor gate and at least one first conductive structure formed therethrough at least partially over a surface of the dummy structure; forming a passivation layer over the ILD layer, the passivation layer comprising at least one first pad structure formed therein and making electrical contact with the conductive structure; bonding the first substrate with a second substrate; removing at least a portion of the first dummy structure, thereby forming a first opening; and forming a conductive material within the first opening for formation of a second conductive structure, the second conductive structure being electrically coupled to the first conductive structure.
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Citations
40 Claims
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1. A method of forming a semiconductor device, comprising the steps of:
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forming at least one transistor gate over a first substrate and at least one first dummy structure within the first substrate and at least one first conductive structure formed therethrough at least partially over a surface of the dummy structure; forming an interlayer dielectric (ILD) layer over the gate transistor, the ILD layer comprising at least one contact structure formed therein and making electrical contact with the transistor gate; forming a passivation layer over the ILD layer, the passivation layer comprising at least one first pad structure formed therein and making electrical contact with the conductive structure; bonding the first substrate with a second substrate; removing at least a portion of the first dummy structure, thereby forming a first opening; and forming a conductive material within the first opening for formation of a second conductive structure, the second conductive structure being electrically coupled to the first conductive structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of forming a semiconductor device, comprising the steps of:
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forming at least one transistor gate over a first substrate and at least one first conductive structure within the first substrate; forming an interlayer dielectric (ILD) layer over the gate transistor, the ILD layer comprising at least one contact structure formed therein and making electrical contact with the transistor gate and at least one second conductive structure and making electric contact with the first conductive structure; forming a first passivation layer over the ILD layer, the first passivation layer comprising at least one first pad structure formed therein, wherein the first pad structure makes electrical contact with the second conductive structure; bonding the first substrate with a second substrate; removing at least a portion of the first conductive structure; and forming a second passivation layer over a bottom surface of the first substrate, the second passivation layer comprising at least one second pad structure formed therein, wherein the second pad structure makes electrical contact with the first conductive structure.
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13. A stacked structure, comprising:
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at least one first substrate comprising at least one first pad structure formed thereover; and at least one second substrate comprising; at least one transistor gate formed over the second substrate and at least one first conductive structure formed through the second substrate; an interlayer dielectric (ILD) layer formed over the gate transistor, the ILD layer comprising at least one contact structure formed therethrough and making electrical contact with the transistor gate and at least one second conductive structure formed therein at least partially over a surface of the first conductive structure, wherein the top surface of the first conductive structure is substantially planar with a top surface of the second substrate; and a passivation layer formed over the ILD layer, the passivation layer comprising at least one second pad structure making electrical contact with the second conductive structure, wherein the first substrate is coupled to the second substrate by bonding the first substrate with the second substrate. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A stacked structure, comprising:
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at least one first substrate comprising at least one first pad structure thereover, and at least one second substrate comprising; at least one transistor gate formed over the second substrate and a plurality of first conductive structures formed through the second substrate; an interlayer dielectric (ILD) layer formed over the gate transistor, the ILD layer comprising at least one contact structure formed therein and making electrical contact with the transistor gate and a plurality of second conductive structures formed therethrough at least partially over and making electrical contact with respective ones of the first conductive structures, wherein the top surfaces of the first conductive structures are substantially planar with a top surface of the second substrate; and at least one dielectric structure formed within the second substrate, wherein the dielectric structure reduces electrical coupling between two adjacent first conductive structures from the plurality of the first conductive structures; at least one inter-metal dielectric (IMD) layer formed over the ILD layer, the IMD layer including at least one metal-containing layer formed therein, the metal-containing layer making electrical contact with the contact structure and comprising a plurality of third conductive structures making electrical contact with respective ones of the second conductive structures; and a passivation layer formed over the metal-containing layers, the passivation layer comprising at least one second pad structure formed therethrough and making electrical contact with at least one of the third conductive structures, wherein the first substrate is coupled to the second substrate by bonding the first substrate with the second substrate. - View Dependent Claims (25)
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26. A stacked structure, comprising:
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a first substrate comprising at least one first pad structure over the first substrate and at least one first support structure within and extending above the first substrate, the first pad structure having a first surface, the first support structure having a second surface, wherein the first surface and the second surface are substantially coplanar; and a second substrate comprising at least one second pad structure over the second substrate and at least one second support structure within and extending above the second substrate, the second pad structure having a third surface, the second support structure having a fourth surface, wherein the third surface contacts the first surface and the fourth surface contacts the second surface. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33)
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34. A method of forming a stacked structure, comprising:
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forming at least one first pad structure over a first substrate and at least one first support structure through the first substrate, the first pad structure having a first surface, the first support structure having a second surface, wherein the first surface and the second surface are substantially coplanar; forming at least one second pad structure over a second substrate and at least one second support structure through the second substrate, the second pad structure having a third surface, the second support structure having a fourth surface; and bonding the first substrate and the second substrate so that the third surface contacts the first surface and the fourth surface contacts the second surface. - View Dependent Claims (35, 36, 37, 38, 39, 40)
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Specification