Color el display and method for producing the same

• US 20080129195A1
• Filed: 12/03/2007
• Published: 06/05/2008
• Est. Priority Date: 12/04/2006
• Status: Active Grant

• Current Assignee: Toppan Printing Co., Ltd. (TOPPAN Holdings, Inc.)
• Original Assignee: Toppan Printing Co., Ltd. (TOPPAN Holdings, Inc.)
• Inventors: Ishizaki, Mamoru, Kitazume, Eiichi, Ito, Manabu, Sekine, Norimasa
• Granted Patent: US 8,098,006 B2
• Time in Patent Office: Days
• US Class Current: 313/504
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]

Abstract

One embodiment of the present invention is a color EL display characterized in that at least color filters, a thin film transistor circuit, an organic EL layer, and a common electrode are laminated in this order on a transparent substrate. Another embodiment of the invention is a method for producing a color EL display comprising the steps of forming color filters or a transparent substrate; forming a thin film transistor circuit; forming an organic EL layer; and forming a common electrode, wherein process temperatures of the steps of forming the thin film transistor circuit and subsequent steps are 200° C. or less.

Claims

1. A color EL display, comprising color filters, a thin film transistor circuit, an organic EL layer and a common electrode laminated in this order on a transparent substrate.

2. The color EL display according to claim 1, wherein the thin film transistor circuit is substantially transparent.

3. The color EL display according to claim 1, wherein a semiconductor layer of the thin film transistor circuit is formed of an oxide semiconductor.

4. The color EL display according to claim 3, wherein the thin film transistor circuit comprises at least two or more thin film transistors and one or more capacitor per one subpixel.

5. The color EL display according to claim 3, wherein the semiconductor layer of the thin film transistor is formed of an oxide containing at least any one of elements of In, Ga, Zn, Sn and Mg.

6. The color EL display according to claim 1, wherein a semiconductor layer of the thin film transistor circuit is formed of an organic semiconductor.

7. The color EL display according to claim 1, wherein the thin film transistor circuit comprises two or more semiconductor layers.

8. The color EL display according to claim 1, wherein the organic EL layer is of a white light-emitting type and the color filters comprise R, G and B.

9. The color EL display according to claim 1, wherein the organic EL layer is of a blue light-emitting type or a white light-emitting type, and the color filters are of a color conversion type.

10. The color EL display according to claim 1, wherein the organic EL layer has an RGB selective coating structure, and the color filters are of a color purity-improving type.

11. A method for producing the color EL display as described in claim 1, comprising the steps of:

forming the color filters on a transparent substrate;

forming the thin film transistor circuit;

forming the organic EL layer; and

forming the common electrode,

wherein a process temperature of the step of forming the thin film transistor circuit and after the step is 200°

C. or less.

12. A method for producing the color EL display as described in claim 10, comprising the steps of:

forming the color filters of color purity-improving type on a transparent substrate;

forming the thin film transistor circuit;

forming the organic EL layer; and

forming the common electrode,

wherein the step of forming the organic EL layer comprises an RGB selective coating process by a printing method.