METHOD AND STRUCTURE FOR THICK LAYER TRANSFER USING A LINEAR ACCELERATOR
First Claim
1. A method for fabricating a free standing thickness of materials using one or more semiconductor substrates, comprising:
- providing a semiconductor substrate having a surface region and a thickness;
subjecting the surface region of the semiconductor substrate to a first plurality of high energy particles generated using a linear accelerator to form a region of a plurality of gettering sites within a cleave region, the cleave region being provided beneath the surface region to defined a thickness of material to be detached, the semiconductor substrate being maintained at a first temperature;
subjecting the semiconductor substrate to a treatment process;
subjecting the surface region of the semiconductor substrate to a second plurality of high energy particles generated using the linear accelerator, the second plurality of high energy particles being provided to increase a stress level of the cleave region from a first stress level to a second stress level, the semiconductor substrate being maintained at a second temperature; and
freeing the thickness of detachable material using a cleaving process.
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Abstract
A method for fabricating free standing thickness of materials using one or more semiconductor substrates, e.g., single crystal silicon, polysilicon, silicon germanium, germanium, group III/IV materials, and others. In a specific embodiment, the present method includes providing a semiconductor substrate having a surface region and a thickness. The method includes subjecting the surface region of the semiconductor substrate to a first plurality of high energy particles generated using a linear accelerator to form a region of a plurality of gettering sites within a cleave region, the cleave region being provided beneath the surface region to defined a thickness of material to be detached, the semiconductor substrate being maintained at a first temperature. In a specific embodiment, the method includes subjecting the surface region of the semiconductor substrate to a second plurality of high energy particles generated using the linear accelerator, the second plurality of high energy particles being provided to increase a stress level of the cleave region from a first stress level to a second stress level. In a preferred embodiment, the semiconductor substrate is maintained at a second temperature, which is higher than the first temperature. The method frees the thickness of detachable material using a cleaving process, e.g., controlled cleaving process.
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Citations
30 Claims
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1. A method for fabricating a free standing thickness of materials using one or more semiconductor substrates, comprising:
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providing a semiconductor substrate having a surface region and a thickness; subjecting the surface region of the semiconductor substrate to a first plurality of high energy particles generated using a linear accelerator to form a region of a plurality of gettering sites within a cleave region, the cleave region being provided beneath the surface region to defined a thickness of material to be detached, the semiconductor substrate being maintained at a first temperature; subjecting the semiconductor substrate to a treatment process; subjecting the surface region of the semiconductor substrate to a second plurality of high energy particles generated using the linear accelerator, the second plurality of high energy particles being provided to increase a stress level of the cleave region from a first stress level to a second stress level, the semiconductor substrate being maintained at a second temperature; and freeing the thickness of detachable material using a cleaving process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for forming a free standing thickness of layer transferred material, the method comprising:
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providing a crystalline substrate material having a surface region; introducing a plurality of first particles at a first dose range and within a first temperature range, whereupon the first dose range being less than an amount sufficient to cause the plurality of particles to be permanently disposed in the crystalline substrate material at an accumulation region, through the surface region to the accumulation region of the crystalline substrate material to form an implant profile having a peak concentration and a base spatially disposed within a dimension to form the accumulation region, the first particles causing a plurality of defects in the crystalline material in the accumulation region, the accumulation region being defined by a depth greater than about 20 microns beneath the surface region and a slice of crystalline material to be detached between the accumulation region and the surface region; performing a treatment process on the crystalline substrate material to cause formation of a plurality of substantially permanent defects that have been quenched in the crystalline substrate material from the first particles in the accumulation region; and introducing a plurality of second particles at a second dose range and a second temperature range into the accumulation region to increase an internal stress in the accumulation region to cause a portion of the accumulation region to be cleavable; and forming a free standing thickness of crystalline material by detaching the thickness of crystalline material from a remaining portion of the crystalline substrate material. - View Dependent Claims (13, 14, 15, 16, 17)
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18. A method for slicing a plurality of films from a bulk material, the method comprising:
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providing a bulk material having a surface region and a weight; repeatedly cleaving a plurality of films from the bulk material, each of the plurality of films having a thickness of greater than about 20 microns to less than about 150 microns; and using more than about 70% of the weight of the bulk material for the plurality of films. - View Dependent Claims (19, 20, 21)
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22. A method for efficiently separating films from a bulk material, the method comprising:
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providing a bulk material having a surface region; and repeatedly cleaving a plurality of films from the bulk material, each of the films having a thickness of about 20 microns or greater, such that an efficiency of 80% or greater is achieved, wherein, efficiency=(total wt. of free standing layers)/(wt. of bulk material consumed)×
100. - View Dependent Claims (23, 24)
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25. A method for forming a layer of semiconductor material, the method comprising:
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providing a bulk semiconductor material having a surface; implanting through the surface and into the bulk material, a first plurality of particles output by a linear accelerator at an energy of between about 0.5-12 MeV, to form a cleave region comprising a plurality of gettering sites, a distance between the cleave region and the surface defining a thickness of a semiconductor material to be detached; and freeing the thickness of detachable material using a controlled cleaving process. - View Dependent Claims (26, 27, 28, 29, 30)
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Specification