Method of manufacturing semiconductor device including trench-forming process
First Claim
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1. A method of manufacturing a semiconductor device, comprising:
- forming a trench in a semiconductor substrate by an anisotropic dry etching, wherein the trench has an aspect ratio greater than or equal to 10 and the semiconductor substrate includes silicon; and
removing a damaged layer that is generated in a wall and a bottom of the trench due to the anisotropic dry etching by an isotropic dry etching, wherein the isotropic dry etching is performed with a first gas including carbon and fluorine and a second gas including oxygen, and a temperature of the semiconductor substrate is controlled so that the damaged layer is removed from a whole surface of the wall and the bottom.
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Abstract
In a manufacturing method of a semiconductor device, a trench is formed in a semiconductor substrate by an anisotropic dry etching so as to have an aspect ratio greater than or equal to 10, and a damaged layer that is generated in a wall and a bottom of the trench due to the anisotropic dry etching is removed by an isotropic dry etching. The isotropic dry etching is performed with a first gas including carbon and fluorine and a second gas including oxygen. A temperature of the semiconductor substrate is controlled so that the damaged layer is removed from a whole surface of the wall and the bottom in the isotropic dry etching.
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Citations
14 Claims
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1. A method of manufacturing a semiconductor device, comprising:
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forming a trench in a semiconductor substrate by an anisotropic dry etching, wherein the trench has an aspect ratio greater than or equal to 10 and the semiconductor substrate includes silicon; and removing a damaged layer that is generated in a wall and a bottom of the trench due to the anisotropic dry etching by an isotropic dry etching, wherein the isotropic dry etching is performed with a first gas including carbon and fluorine and a second gas including oxygen, and a temperature of the semiconductor substrate is controlled so that the damaged layer is removed from a whole surface of the wall and the bottom. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification