3D R/W cell with reduced reverse leakage
First Claim
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1. A nonvolatile memory device, comprising:
- a semiconductor diode steering element; and
a semiconductor read/write switching element.
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Abstract
A nonvolatile memory device includes a semiconductor diode steering element, and a semiconductor read/write switching element.
60 Citations
20 Claims
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1. A nonvolatile memory device, comprising:
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a semiconductor diode steering element; and a semiconductor read/write switching element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A nonvolatile memory device, comprising:
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a semiconductor diode steering element; a semiconductor resistor read/write switching element; at least one conductive layer located between the steering element and the read/write switching element; a first electrode electrically contacting the steering element; and a second electrode electrically contacting the read/write switching element; wherein the read/write switching element, the at least one conductive layer and the steering element are arranged in series in a pillar between the first electrode and the second electrode. - View Dependent Claims (15)
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16. A nonvolatile memory device, comprising:
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a semiconductor diode steering element; a semiconductor read/write switching element; at least one conductive layer located between the steering element and the read/write switching element; and a means for switching the read/write switching element from a first resistivity state to a second resistivity state different from the first resistivity state and for switching the read/write switching element from the second resistivity state to the first resistivity state. - View Dependent Claims (17, 18, 19, 20)
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Specification