MOS device with integrated schottky diode in active region contact trench
First Claim
1. A semiconductor device formed on a semiconductor substrate, comprising:
- a drain;
an epitaxial layer overlaying the drain; and
an active region comprising;
a body disposed in the epitaxial layer, having a body top surface and a body bottom surface;
a source embedded in the body, extending from the body top surface into the body;
a gate trench extending into the epitaxial layer;
a gate disposed in the gate trench;
an active region contact trench extending through the source and at least part of the body into the drain, wherein the active region contact trench is shallower than the body bottom surface; and
an active region contact electrode disposed within the active region contact trench.
2 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device is formed on a semiconductor substrate. The device comprises a drain, an epitaxial layer overlaying the drain, and an active region. The active region comprises a body disposed in the epitaxial layer, having a body top surface and a body bottom surface, a source embedded in the body, extending from the body top surface into the body, a gate trench extending into the epitaxial layer, a gate disposed in the gate trench, an active region contact trench extending through the source and at least part of the body into the drain, wherein the active region contact trench is shallower than the body bottom surface, and an active region contact electrode disposed within the active region contact trench.
-
Citations
25 Claims
-
1. A semiconductor device formed on a semiconductor substrate, comprising:
-
a drain; an epitaxial layer overlaying the drain; and an active region comprising; a body disposed in the epitaxial layer, having a body top surface and a body bottom surface; a source embedded in the body, extending from the body top surface into the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; an active region contact trench extending through the source and at least part of the body into the drain, wherein the active region contact trench is shallower than the body bottom surface; and an active region contact electrode disposed within the active region contact trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A method of fabricating a semiconductor device, comprising:
-
forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the gate trench; forming a body in the epitaxial layer, having a body top surface and a body bottom surface; forming a source; forming an active region contact trench that extends through the source and the body into the drain, wherein the active region contact trench is shallower than the body bottom surface; and disposing a contact electrode within the active region contact trench. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
-
Specification