Image Sensor Element For Backside-Illuminated Sensor
First Claim
Patent Images
1. A backside-illuminated sensor comprising:
- a semiconductor substrate having a front surface and a back surface; and
a plurality of image sensor elements formed on the front surface of the semiconductor substrate, wherein at least one image sensor element comprises a transfer transistor and a photodetector, and wherein a gate of the transfer transistor comprises a reflective layer and overlies the photodetector.
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Abstract
Provides is a backside-illuminated sensor including a semiconductor substrate having a front surface and a back surface. A plurality of image sensor elements are formed on the front surface of the semiconductor substrate. At least one of the image sensor elements includes a transfer transistor and a photodetector. The gate of the transfer transistor includes an optically reflective layer. The gate of the transfer transistor, including the optically reflective layer, overlies the photodetector. In one embodiment, the gate overlies the photodetector by at least 5%.
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Citations
19 Claims
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1. A backside-illuminated sensor comprising:
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a semiconductor substrate having a front surface and a back surface; and a plurality of image sensor elements formed on the front surface of the semiconductor substrate, wherein at least one image sensor element comprises a transfer transistor and a photodetector, and wherein a gate of the transfer transistor comprises a reflective layer and overlies the photodetector. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A back-side illuminated sensor, comprising:
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a substrate; a transfer gate formed on the substrate and including an optically reflective material; a photogeneration region formed on the substrate underlying the transfer gate, whereby the transfer gate overlies at least a portion of the photogeneration region. - View Dependent Claims (12, 13, 14, 15, 16)
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17. An apparatus comprising:
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a substrate including a first surface and a second surface; a photodetector formed adjacent the second surface of the substrate; a transistor including an optically reflective layer formed on the second surface of substrate and disposed over the photodetector, wherein the optically reflective layer is configured to reflect a radiation beam incident on the first surface of the substrate towards the photodetector. - View Dependent Claims (18, 19)
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Specification