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Image Sensor Element For Backside-Illuminated Sensor

  • US 20090078973A1
  • Filed: 09/24/2007
  • Published: 03/26/2009
  • Est. Priority Date: 09/24/2007
  • Status: Active Grant
First Claim
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1. A backside-illuminated sensor comprising:

  • a semiconductor substrate having a front surface and a back surface; and

    a plurality of image sensor elements formed on the front surface of the semiconductor substrate, wherein at least one image sensor element comprises a transfer transistor and a photodetector, and wherein a gate of the transfer transistor comprises a reflective layer and overlies the photodetector.

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