DATA WRITING METHOD FOR NON-VOLATILE MEMORY AND CONTROLLER USING THE SAME
First Claim
1. A data writing method for a non-volatile memory, comprising:
- respectively using a plurality of blocks in a substitution area of the non-volatile memory for substituting a plurality of blocks in a data area of the non-volatile memory, wherein data to be written into the blocks in the data area is written into the blocks in the substitution area, and the blocks in the substitution area are selected from a spare area of the non-volatile memory; and
using a plurality of temporary blocks of the non-volatile memory as a temporary area of the blocks in the substitution area,wherein the temporary area is used for temporarily storing data to be written into the blocks in the substitution area.
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Abstract
A data writing method for a non-volatile memory is provided, wherein the non-volatile memory includes a data area and a spare area. In the data writing method, a plurality of blocks in a substitution area of the non-volatile memory is respectively used for substituting a plurality of blocks in the data area, wherein data to be written into the blocks in the data area is written into the blocks in the substitution area, and the blocks in the substitution area are selected from the spare area of the non-volatile memory. A plurality of temporary blocks of the non-volatile memory is used as a temporary area of the blocks in the substitution area, wherein the temporary area is used for temporarily storing the data to be written into the blocks in the substitution area.
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Citations
25 Claims
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1. A data writing method for a non-volatile memory, comprising:
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respectively using a plurality of blocks in a substitution area of the non-volatile memory for substituting a plurality of blocks in a data area of the non-volatile memory, wherein data to be written into the blocks in the data area is written into the blocks in the substitution area, and the blocks in the substitution area are selected from a spare area of the non-volatile memory; and using a plurality of temporary blocks of the non-volatile memory as a temporary area of the blocks in the substitution area, wherein the temporary area is used for temporarily storing data to be written into the blocks in the substitution area. - View Dependent Claims (2, 3, 4, 5, 6, 16)
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7. A data writing method for a non-volatile memory, wherein the non-volatile memory is a MLC NAND flash memory, and each block in the non-volatile memory comprises upper pages and lower pages, the data writing method comprising:
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using only the lower pages for writing data in a part of the blocks, wherein the write speed of the lower pages is faster than the write speed of the upper pages. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A controller, comprising:
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a microprocessor unit, for controlling the operation of the controller; a non-volatile memory interface, electrically connected to the microprocessor unit and used for accessing the non-volatile memory; a buffer memory, electrically connected to the microprocessor unit and used for temporarily storing data; and a memory management module, electrically connected to the microprocessor unit and used for managing the non-volatile memory, wherein the memory management module respectively uses a plurality of blocks in a substitution area of the non-volatile memory for substituting a plurality of blocks in a data area of the non-volatile memory, wherein data to be written into the blocks in the data area is written into the blocks in the substitution area, and the blocks in the substitution area are selected from a spare area of the non-volatile memory, and wherein the memory management module uses a plurality of temporary blocks of the non-volatile memory as a temporary area of the blocks in the substitution area, wherein the temporary area is used for temporarily storing data to be written into the blocks in the substitution area. - View Dependent Claims (14, 15, 17, 18)
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19. A controller, suitable for a storage device, wherein a non-volatile memory of the storage device is a MLC NAND flash memory, and each block in the non-volatile memory comprises upper pages and lower pages, the controller comprising:
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a microprocessor unit, for controlling the operation of the controller; a non-volatile memory interface, electrically connected to the microprocessor unit and used for accessing the non-volatile memory; a buffer memory, electrically connected to the microprocessor unit and used for temporarily storing data; and a memory management module, electrically connected to the microprocessor unit and used for managing the non-volatile memory, wherein the memory management module only uses the lower pages for writing data in a part of the blocks, wherein the write speed of the lower pages is faster than the write speed of the upper pages. - View Dependent Claims (20, 21, 22, 23, 24)
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25. A controller, suitable for a storage device, wherein a non-volatile memory of the storage device is a MLC NAND flash memory, and each block in the non-volatile memory comprises pages having at least two different write speeds, the controller comprising:
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a microprocessor unit, for controlling the operation of the controller; a non-volatile memory interface, electrically connected to the microprocessor unit and used for accessing the non-volatile memory; a buffer memory, electrically connected to the microprocessor unit and used for temporarily storing data; and a memory management module, electrically connected to the microprocessor unit and used for managing the non-volatile memory, wherein the memory management module uses only the pages having the fastest write speed for writing data in at least one of the blocks.
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Specification