METHODS FOR MEASUREMENT AND CHARACTERIZATION OF INTERFEROMETRIC MODULATORS
First Claim
1. A method of characterizing the behavior of a microelectromechanical system (MEMS) device, the method comprising:
- applying a driving voltage signal to the MEMS device, wherein the MEMS device comprises a movable layer;
measuring a current through the MEMS device as a function of time;
integrating the current over a period of time; and
determining an operational characteristic of the MEMS device based upon the integrated current.
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Accused Products
Abstract
Various methods are described to characterize interferometric modulators or similar devices. Measured voltages across interferometric modulators may be used to characterize transition voltages of the interferometric modulators. Measured currents may be analyzed by integration of measured current to provide an indication of a dynamic response of the interferometric modulator. Frequency analysis may be used to provide an indication of a hysteresis window of the interferometric modulator or mechanical properties of the interferometric modulator. Capacitance may be determined through signal correlation, and spread-spectrum analysis may be used to minimize the effect of noise or interference on measurements of various interferometric modulator parameters.
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Citations
26 Claims
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1. A method of characterizing the behavior of a microelectromechanical system (MEMS) device, the method comprising:
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applying a driving voltage signal to the MEMS device, wherein the MEMS device comprises a movable layer; measuring a current through the MEMS device as a function of time; integrating the current over a period of time; and determining an operational characteristic of the MEMS device based upon the integrated current. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of characterizing the dynamic behavior of a microelectromechanical system (MEMS) device, the method comprising:
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applying a driving voltage to an MEMS device for a first period of time, the MEMS device comprising a movable electrode and a fixed electrode; measuring a current through the MEMS device as a function of time over a second period of time, the second period of time comprising at least a portion of the first period of time; and determining the dynamic behavior of the MEMS device based on an integration of the current. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A method of determining a damping force exerted on a movable layer of a microelectromechanical system (MEMS) device, the method comprising:
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applying a driving voltage signal to the MEMS device, wherein the MEMS device comprises a movable layer, and wherein the driving voltage causes the movable layer to move; measuring a current through the MEMS device as a function of time; integrating the current over a period of time; and determining the damping force exerted on the movable layer based on the integrated current. - View Dependent Claims (17, 18, 19)
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20. A device comprising:
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a microelectromechanical system (MEMS) device comprising a movable layer; and circuitry configured to apply a driving voltage signal to the MEMS device to induce movement of the movable layer, measure a current through the MEMS device as a function of time, integrate the current over a period of time, and determine a behavioral characteristic of the MEMS device based on the integrated current. - View Dependent Claims (21, 22)
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23. A device, comprising:
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means for inducing movement of a movable layer of a MEMS device; means for measuring a current through the MEMS device; means for integrating the current over a period of time; and means for characterizing a behavior of the MEMS device based upon the integrated current. - View Dependent Claims (24, 25, 26)
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Specification