REFLECTION-TYPE MASK AND METHOD OF MAKING THE REFLECTION-TYPE MASK
First Claim
1. A reflection-type mask comprising:
- a substrate;
a multilayer reflective film which is formed above the substrate, and which reflects exposure light;
a first photoabsorber layer which is formed above the multilayer reflective film, and which absorbs the exposure light;
a circuit pattern region constituted, in conformity with a predetermined circuit pattern, of an opening formed as a result of removal of the first photoabsorber layer, and an absorbing portion where the first photoabsorber layer remains; and
a shading region having a reflectance with respect to the exposure light lower than that in the absorbing portion of the circuit pattern region.
5 Assignments
0 Petitions
Accused Products
Abstract
To provide a reflection-type mask having a reduced shadowing effect, capable of phase shift exposure and having a shading frame of sufficient shading performance. The mask includes a substrate 11, a multilayer reflective film 12 which is formed above the substrate 11, and which reflects exposure light, a first photoabsorber layer 15 which is formed above the multilayer reflective film 12, and which absorbs the exposure light, a circuit pattern region 16 constituted, in conformity with a predetermined circuit pattern, of an opening formed as a result of removal of the first photoabsorber layer 15 and an absorbing portion where the first photoabsorber layer remains, and a shading region 18 having a reflectance with respect to the exposure light lower than that in the absorbing portion of the circuit pattern region 16.
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Citations
20 Claims
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1. A reflection-type mask comprising:
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a substrate; a multilayer reflective film which is formed above the substrate, and which reflects exposure light; a first photoabsorber layer which is formed above the multilayer reflective film, and which absorbs the exposure light; a circuit pattern region constituted, in conformity with a predetermined circuit pattern, of an opening formed as a result of removal of the first photoabsorber layer, and an absorbing portion where the first photoabsorber layer remains; and a shading region having a reflectance with respect to the exposure light lower than that in the absorbing portion of the circuit pattern region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of manufacturing a reflection-type mask, comprising:
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preparing a substrate; forming a multilayer reflective film above the substrate; forming a first photoabsorber layer above the multilayer reflective film; forming a circuit pattern region constituted of an opening formed as a result of removal of the first photoabsorber layer, and an absorbing portion where the first photoabsorber layer remains, by etching the first photoabsorber layer in conformity with a predetermined circuit pattern; and forming a shading region having a reflectance with respect to the exposure light lower than that in the absorbing portion of the circuit pattern region. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification